Untitled
Abstract: No abstract text available
Text: blE J> HEULETT-PACKAR»/ CNPNTS W hoI HEW LETT A"KM PACKARD m MMM7Sfl4 □ DlOO'ia b^l IHPA MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 200 mil BeO Package • • Cascadable 50 £2 Gain Block High Output Power:
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MSA-0520
MSA-0520
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AVANTEK msa 0420
Abstract: avantek Avantek amplifier 167 avantek microwave MSA-0420 Avantek S MODAMP LD110 200 mil BeO package
Text: 0AVANTEK MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 200 mil BeO Package Features • • • • • • Cascadable 50 n Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 d Bm typical Pi dB at 1.0 GHz
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MSA-0420
MSA-0420
AVANTEK msa 0420
avantek
Avantek amplifier 167
avantek microwave
Avantek S
MODAMP
LD110
200 mil BeO package
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Untitled
Abstract: No abstract text available
Text: d a la sheet 0AVANTEK MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • Avantek 200 mil BeO Package Cascadable 50 Q. Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz
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MSA-0520
general152
ADS-1546/R-9-89
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Untitled
Abstract: No abstract text available
Text: O a v a n te k MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 200 mil BeO Package Features • • • • • • Cascadable 50 £1 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz
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MSA-0420
MSA-0420
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Untitled
Abstract: No abstract text available
Text: VI H EW LETT PACKARD MSA-0520 M ODAM P Cascadable Silicon Bipolar M onolithic M icrowave Integrated C ircu it A m plifiers 200 mil BeO Package Features • • Cascadabie 50 i2 Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz • Low Distortion:
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MSA-0520
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avantek msa0520
Abstract: Avantek S AVANTEK MSA-0520 NF50 avantek microwave Avantek UA-152
Text: dala sheet O A V A N T E K MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • Avantek 200 mil BeO Package Cascadable 50 Q. Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz
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MSA-0520
MSA-0520
ADS-1546/R-9-89
avantek msa0520
Avantek S
AVANTEK
NF50
avantek microwave
Avantek UA-152
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Untitled
Abstract: No abstract text available
Text: m H E W LE TT PACKARD MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features • • • • • • 200 mil BeO Package Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz
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MSA-0420
SA-0420
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Untitled
Abstract: No abstract text available
Text: MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT IV I P A C K A R D Features • • • • • • 200 mil BeO Package High Dynamic Range Cascadable 50 a or 75 Q Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz
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MSA-1120
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Untitled
Abstract: No abstract text available
Text: H EWL ETT -PA CKA RD/ CMPNTS blE J> H E W LE T T PACKARD m • 4447564 0G10150 Ifi? H H P A MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 200 mil BeO Package Features • • • • • • High Dynamic Range Cascadable
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0G10150
MSA-1120
MSA-1120
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AT-64020
Abstract: No abstract text available
Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:
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AT-64020
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC O a v a n 20E D t • imn tfc. DDDti?3D b ■ MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers e k ~-7 4 - r s - o / t Avantek 200 mil BeO Package Features • High Dynamic Range Cascadable 50 Q, or 75 ft Gain Block
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MSA-1120
310-371-8717or
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AT-64020
Abstract: AT64020 AT-64023
Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk
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AT-64020
AT-64023
AT-64020
AT64020
AT-64023
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MSA-0420
Abstract: MSA0420
Text: Agilent MSA-0420 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description • 8.5 dB Typical Gain at 1.0 GHz 200 mil BeO Package • 16.0 dBm Typical P1 dB at 1.0 GHz The MSA-0420 is a high performance silicon bipolar Monolithic
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MSA-0420
MSA-0420
5965-9574E
5989-2752EN
MSA0420
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Untitled
Abstract: No abstract text available
Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:
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AT-64020
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MRF328
Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and
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AN790/D
AN790
MRF328
MRF243
mrf245
MRF648
MRF463
Motorola transistors MRF648
MRF460
Barnes RM2A
Motorola transistors MRF455
Motorola transistors MRF454
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AT-64023
Abstract: S21E
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for
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AT-64023
AT-64023
5989-2658EN
AV02-1221EN
S21E
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AT-64023
Abstract: S21E 156 51 MA2670
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for
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AT-64023
AT-64023
reliaT-64023
5989-2658EN
AV02-1221EN
S21E
156 51
MA2670
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AT-64020
Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn
Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for
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AT-64020
AT-64020
5989-2657EN
AV02-1220EN
S21E
Silicon Bipolar Transistor
200 mil BeO package npn
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200 mil BeO package
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and
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AT-64020
AT-64020
5965-8915E
5989-2657EN
200 mil BeO package
RF NPN POWER TRANSISTOR 2.5 GHZ
TRANSISTOR 023
data sheet IC 74
IC vhf/uhf Amplifier
ic-110
RF NPN POWER TRANSISTOR 3 GHZ
RF POWER TRANSISTOR NPN
zo 107
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200 mil BeO package
Abstract: transistor 2 ghz zo 107 MSA-0520 NF50
Text: MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use
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MSA-0520
MSA-0520
5965-9582E
5989-2755EN
200 mil BeO package
transistor 2 ghz
zo 107
NF50
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100C
Abstract: MSA-0520 NF50
Text: MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use as a general
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MSA-0520
MSA-0520
exte62
5989-2755EN
AV02-1228EN
100C
NF50
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bipolar transistor s-parameter
Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed
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AT-64023
AT-64023
5965-8916E
5989-2658EN
bipolar transistor s-parameter
bipolar transistor ghz s-parameter
200 mil BeO package
RF NPN POWER TRANSISTOR 2.5 GHZ
20-50-200
TRANSISTOR 12 GHZ
RF TRANSISTOR 2.5 GHZ s parameter
ic-110
RF POWER TRANSISTOR NPN vhf
RF NPN POWER TRANSISTOR 3 GHZ
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MSA-1120
Abstract: NF460
Text: MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic
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MSA-1120
MSA-1120
5989-2748EN
AV02-1234EN
NF460
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200 mil BeO package
Abstract: msa-1120 MMIC marking code R
Text: MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high
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MSA-1120
MSA-1120
temp62
5965-9559E
5989-2748EN
200 mil BeO package
MMIC marking code R
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