2000A power diode
Abstract: c1447 Q-67220-C1447
Text: InGaAlP-High Brightness-Lumineszenzdiode 617 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch
|
Original
|
|
PDF
|
Q-67220-C1447
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 617nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung
|
Original
|
617nm,
Q-67220-C1447
|
PDF
|
Q-67220-C1447
Abstract: c1447
Text: InGaAlP-High Brightness-Lumineszenzdiode 617nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung
|
Original
|
617nm,
Q-67220-C1447
c1447
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISC TYPE DIODE SDF2000B is a Flat Pack Diode designed for high power rectifi SD F2000B cation. • If av — 2000A, V rrm— 600V • High Reliability by pressure mount construction. (Applications) • High Power Rectifier • Welding Power Supply • Rectifier for metal surfa
|
OCR Scan
|
SDF2000B
F2000B
SDF2000B20
SDF2000B40
SDF2000B60
D0Q2323
B-165
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISC TYPE DIODE SDF2000H S D F 2 0 0 0 H is a Flat Pack Diode designed for high power rectifi cation. • If av =2000A, V„bm= 1200V • High Reliability by pressure mount construction. (Applications) • High Power Rectifier • Welding Power Supply •M axim um Ratings
|
OCR Scan
|
SDF2000H
SDF2000H80
SDF2000H100
SDF2000H120
B-167
000232b
B-168
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1996 DNB65 DS4175-1.2 DNB65 RECTIFIER DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 2000A IFSM 31000A • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.
|
Original
|
DNB65
DS4175-1
1000A
DNB65
|
PDF
|
Untitled
Abstract: No abstract text available
Text: an GEC P L E S S E Y SEPTEMBER 1996 SEMICONDUCTORS DS4175-1.2 DNB65 RECTIFIER DIODE KEY PARAMETERS VRRM 4500V ' f <a v , 2000A Ifsm 31000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.
|
OCR Scan
|
DS4175-1
DNB65
1000A
DNB65
DNB6544
DNB6540
DNB6538
DNB6536
D0200AD.
|
PDF
|
TRB65
Abstract: No abstract text available
Text: TRANSYS li mi t tu TRB65 Récifier Diode EU CTM M « KEY PARAMETERS V RRM 4500V 2000A F AV 31000A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.
|
OCR Scan
|
TRB65
1000A
TRB65
D0200AD.
|
PDF
|
asymmetric thyristor datasheet
Abstract: s12w pwm thyristor ds4200 DYNEX Thyristor asymmetric thyristor isolated gate Thyristor Sine PWM AC 50HZ MAS110S MP02
Text: MAS110S MAS110S Fast Turn-off Asymmetric Thyristor/Diode Module Replaces April 1999 version, DS4200-4.0 DS4200-5.0 January 2000 KEY PARAMETERS VDRM 1400V ITSM 2000A IT AV per arm 110A Visol 2500V tq 10/12/15µs APPLICATIONS ● High Frequency High Power Choppers And Inverters.
|
Original
|
MAS110S
DS4200-4
DS4200-5
MAS110S
asymmetric thyristor datasheet
s12w
pwm thyristor
ds4200
DYNEX Thyristor
asymmetric thyristor
isolated gate Thyristor
Sine PWM AC 50HZ
MP02
|
PDF
|
TA32912Q
Abstract: TA329-12Q TA32914Q TA32910Q TA329-14Q
Text: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A
|
Original
|
TA329.
DS4680-3
400Hz
40kHz
TA32912Q
TA329-12Q
TA32914Q
TA32910Q
TA329-14Q
|
PDF
|
GATE ASSISTED TURN-OFF THYRISTORS
Abstract: ultrasonic generator 40khz AN4839 DF451 TA329
Text: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A
|
Original
|
TA329.
DS4680-3
400Hz
40kHz
TA329
GATE ASSISTED TURN-OFF THYRISTORS
ultrasonic generator 40khz
AN4839
DF451
|
PDF
|
TK18
Abstract: ON SEMICONDUCTOR 613 AN4839 DYNEx
Text: TK18 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 115A ITSM 2000A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives
|
Original
|
DS45253-4
DS4253-5
100mA,
TK18
ON SEMICONDUCTOR 613
AN4839
DYNEx
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1000DHB06S ADVANCE ENGINEERING DATA DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 1000A IC(CONT) 2000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.
|
Original
|
GP1000DHB06S
DS4340-4
290ns
430ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet ACD-15 TRMS-PRO 2000A Clamp-on Multimeter Wide range of measuring features built into one, professional meter. The TRMS version with backlight display, improves performance and reliability. • True RMS ■ Auto power off ■ Backlight ■ Low battery indication
|
Original
|
ACD-15
L224mm
W78mm
H40mm
ACF-3000AK
TL36A
877-AMPROBE
|
PDF
|
|
|
thyristor tt 250
Abstract: No abstract text available
Text: @ M ITEL TA329.Q Asymmetric Thyristor S E M IC O N D U C T O R Supersedes January 1997 version, DS4680 - 2.0 DS4680 - 2.1 APPLICATIONS • High Frequency Applications. ■ High Power Choppers And Inverters. KEY PARAMETERS 1400V DRM 370A ^T RMS 2000A ^TSM
|
OCR Scan
|
DS4680
TA329.
400Hz
40kHz.
thyristor tt 250
|
PDF
|
SDF2000B20
Abstract: SANSHA SDF2000B40 SDF2000B60
Text: SANSHA ELECTRIC MFG CO 5bE D • 7Tîl5>t3 OQ004S3 SSI H S E M J DISC T Y P E DIODE SDF2000B T -O i-2 3 S D F 2 0 0 0 B is a Flat Pack Diode designed for high power rectifi cation. • I F av = 2000A, Vrrm= 600V • High Reliability by pressure mount construction.
|
OCR Scan
|
7TT1E43
G0GD453
SDF2000B
SDF2000B
2Q00A,
SDF2000B20
SDF2000B40
SDF2000B60
SANSHA
SDF2000B60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
|
OCR Scan
|
DS4340-4
GP1000DHB06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
|
PDF
|
SDF2000H
Abstract: SANSHA SDF2000H100 SDF2000H120 SDF2000H80
Text: SANSHA E L E C T R I C MFG CO sbE » • T w an a ban dgdomss m s e h j DISC TYPE DIODE SDF2000H r - 'ù j- z z SD F2000H is a Flat Pack Diode designed for high power rectifi cation. • If av = 2000A, VRRM= 1200V • High Reliability by pressure mount construction.
|
OCR Scan
|
SDF2000H
SDF2000H
SDF2000H80
SDF2000H100
SDF2000H120
SANSHA
SDF2000H120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GEC P LE SS EY Si S E M I C O N D U C T O R S DS4326-3.1 GP2000FSS06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS v¥ c e s 600V v CE sal 2.1V 1 2000A C(CONT) 1 4000A C(PK) 290ns tr 430ns t. APPLICATIONS • High Power Switching. ■ Motor Control.
|
OCR Scan
|
DS4326-3
GP2000FSS06S
290ns
430ns
10fxs)
44lbs
70lbs
88lbs
18lbs
1500g
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S DS4680-4.1 TA329.Q ASYMMETRIC THYRISTOR APPLICATIONS KEY PARAMETERS 1400V DRM 370A -T RMS 2000A ^SM dVdt 1 0 0 0 V / ( is 1000A /H S dl/dt • High Frequency Applications. ■ High Power Choppers And Inverters.
|
OCR Scan
|
DS4680-4
TA329.
400Hz
40kHz.
37b6S22
|
PDF
|
J400A
Abstract: calculation of IGBT snubber westcode igbt
Text: Provisional Data Data Sheet Issue:- 2 WESTCODE Date:- 16 Feb, 2001 Absolute Maximum Ratings VOLTAGE RATINGS IGBT Series/Chopper Diode Type F0400LC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)
|
Original
|
F0400LC18
VRM10V,
J400A
calculation of IGBT snubber
westcode igbt
|
PDF
|
F1400NC
Abstract: F1400NC18 TOT 2206 transistor calculation of IGBT snubber
Text: Provisional Data Data Sheet Issue:- 1a WESTCODE Date:- 19 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS IGBT Series/Chopper Diode Type F1400NC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)
|
Original
|
F1400NC18
F1400NC18
F1400NC
TOT 2206 transistor
calculation of IGBT snubber
|
PDF
|
SIDC56D120E
Abstract: 2000A power diode
Text: Preliminary SIDC56D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC56D120E 1200V ICn 75A A This chip is used for:
|
Original
|
SIDC56D120E
50mm2
C67047-A4686
165pes
4222E,
SIDC56D120E
2000A power diode
|
PDF
|
2000A power diode qrr
Abstract: diode RP 1040
Text: IXYS Date:- 28 Jul, 2004 Data Sheet Issue:- 2 Thyristor/Diode Module Types M##500-12io1 to M##500-18io1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1200-1800 V VDSM Non-repetitive peak off-state voltage, (note 1)
|
Original
|
500-12io1
500-18io1
2000A power diode qrr
diode RP 1040
|
PDF
|
