DC converter 50A
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V IXTP200N055T2 IXTA200N055T2
Text: TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2
IXTP200N055T2
O-263
O-220
200N055T2
3-06-08-B
DC converter 50A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
IXTP200N055T2
IXTA200N055T2
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Untitled
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA200N055T2 IXTP200N055T2 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient
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IXTA200N055T2
IXTP200N055T2
O-263
O-220
200N055T2
12-15-08-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA200N055T2-7 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2-7
O-263
200N055T2
3-06-08-B
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IXTA200N055T2-7
Abstract: IXTA200N055T2 200N055
Text: Preliminary Technical Information IXTA200N055T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2-7
O-263
200N055T2
3-06-08-B
IXTA200N055T2-7
IXTA200N055T2
200N055
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IXTN550N055T2
Abstract: DS100173A IXYS IXTN550N055T2
Text: Preliminary Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXTN550N055T2
OT-227
E153432
550N055T2
IXTN550N055T2
DS100173A
IXYS IXTN550N055T2
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IXTN550N055T2
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN550N055T2 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXTN550N055T2
OT-227
E153432
550N055T2
IXTN550N055T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTZ550N055T2 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 D D D Symbol Test Conditions Maximum Ratings
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IXTZ550N055T2
DE475
TZ550N055T2
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offline UPS
Abstract: IXTZ550N055T2
Text: Advance Technical Information IXTZ550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXTZ550N055T2
DE475
TZ550N055T2
offline UPS
IXTZ550N055T2
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IXTK550N055T2
Abstract: IXTX550N055T2 PLUS247
Text: Advance Technical Information IXTK550N055T2 IXTX550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.6mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS
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IXTK550N055T2
IXTX550N055T2
O-264
13/10noseconds
550N055T2
IXTK550N055T2
IXTX550N055T2
PLUS247
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTK550N055T2 IXTX550N055T2 = = 55V 550A Ω 1.6mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS
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IXTK550N055T2
IXTX550N055T2
O-264
550N055T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXTV270N055T2
IXTV270N055T2S
PLUS220
270N055T2
3-10-A
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IXTN550N055T2
Abstract: No abstract text available
Text: Advance Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXTN550N055T2
OT-227
E153432
550N055T2
IXTN550N055T2
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IXTA260N055T2
Abstract: IXTP260N055T2 ixtp260
Text: TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA260N055T2
IXTP260N055T2
O-263
O-220
260N055T2
12-15-08-B
IXTA260N055T2
IXTP260N055T2
ixtp260
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RDS-2S1AB-D 28V
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA260N055T2
IXTP260N055T2
O-263
O-220
260N055T2
12-15-08-B
RDS-2S1AB-D 28V
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55
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IXTA260N055T2
IXTP260N055T2
O-263
O-220
260N055T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTH360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR
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IXTH360N055T2
O-247
360N055T2
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IXTH260N055T2
Abstract: No abstract text available
Text: Preliminary Technical Information IXTH260N055T2 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTH260N055T2
O-247
260N055T2
12-15-08-B
IXTH260N055T2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH360N055T2 IXTT360N055T2 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXTH360N055T2
IXTT360N055T2
O-247
360N055T2
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IXTH360N055T2
Abstract: IXTT360N055T2 S20NF
Text: Preliminary Technical Information IXTH360N055T2 IXTT360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXTH360N055T2
IXTT360N055T2
O-247
O-268
360N055T2
IXTH360N055T2
IXTT360N055T2
S20NF
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Sony SMD fuse
Abstract: Amp. mosfet 1000 watt P4KE 4000 CA Varistor 271 E321567 triac 200A 271 Ceramic Disc Capacitors metal rectifier diode 220 amp 1200 volts varistor UL1414 Y1 3.5v zenar
Text: WPI Metal Oxide Environmental Varistor EV Series UL1449 3rd Edition Recognized Disk Diameter Peak Current, 8/20ms Amps 5mm 125, 250, 500, 800 11, 14, 17, 20, 25, 30, 35, 40, 50, 60, 75, 95, 120, 130, 140, 150, 180, 195, 210, 230, 250, 275, 300, 320, 360
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UL1449
8/20ms
Sony SMD fuse
Amp. mosfet 1000 watt
P4KE 4000 CA
Varistor 271
E321567
triac 200A
271 Ceramic Disc Capacitors
metal rectifier diode 220 amp 1200 volts
varistor UL1414 Y1
3.5v zenar
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MOV150
Abstract: Amp. mosfet 1000 watt K 250 VARISTOR 1.5ke series varistor 7 k 470 TVS AE SMA catalog mosfet Transistor smd en132400 275v SLP2510P8 radial capacitor 160V
Text: WPI Metal Oxide Environmental Varistor EV Series UL1449 3rd Edition Recognized Disk Diameter Peak Current, 8/20ms Amps 5mm 125, 250, 500, 800 11, 14, 17, 20, 25, 30, 35, 40, 50, 60, 75, 95, 120, 130, 140, 150, 180, 195, 210, 230, 250, 275, 300, 320, 360
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UL1449
8/20ms
MOV150
Amp. mosfet 1000 watt
K 250 VARISTOR
1.5ke series
varistor 7 k 470
TVS AE SMA
catalog mosfet Transistor smd
en132400 275v
SLP2510P8
radial capacitor 160V
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varistor 565-1
Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Text: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680
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8/20ms
varistor 565-1
Z 151 VARISTOR
VARISTOR etc 333
varistor 6kv 3ka
3SM diode
VDE 565-1
WXP-103K
4532 MOSFET
varistor en132400
varistor 471 14
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IXTH440N055T2
Abstract: IXTT440N055T2 440a
Text: Advance Technical Information IXTH440N055T2 IXTT440N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTH440N055T2
IXTT440N055T2
O-247
440N055T2
IXTH440N055T2
IXTT440N055T2
440a
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH440N055T2 IXTT440N055T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTH440N055T2
IXTT440N055T2
O-247
O-268
440N055T2
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