C2E1
Abstract: CM200DU-12H
Text: MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-12H ● IC . 200A ● VCES . 600V ● Insulated Type
|
Original
|
CM200DU-12H
35K/W
C2E1
CM200DU-12H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200TU-12H ● IC . 200A ● VCES . 600V ● Insulated Type
|
Original
|
CM200TU-12H
E80276
E80271
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-12H ● IC . 200A ● VCES . 600V ● Insulated Type
|
Original
|
CM200DU-12H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-24H ● IC . 200A ● VCES . 1200V ● Insulated Type
|
Original
|
CM200DU-24H
E80276
E80271
|
PDF
|
CM200TU-12H
Abstract: E80276
Text: MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200TU-12H ● IC . 200A ● VCES . 600V ● Insulated Type
|
Original
|
CM200TU-12H
E80276
E80271
35K/W
CM200TU-12H
E80276
|
PDF
|
CM200DU-24H
Abstract: E80276
Text: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-24H ● IC . 200A ● VCES . 1200V ● Insulated Type
|
Original
|
CM200DU-24H
E80276
E80271
18K/W
CM200DU-24H
E80276
|
PDF
|
MIMMF200ZB040DK1
Abstract: No abstract text available
Text: MIMMF200ZB040DK1 400V 200A FRED Module RoHS Compliant PRODUCT FEATURES Ultrafast Reverse Recovery Time Soft Reverse Recovery Characteristics Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package APPLICATIONS Inversion Welder
|
Original
|
MIMMF200ZB040DK1
MIMMF200ZB040DK1
|
PDF
|
MIMMF200Y040DK1
Abstract: No abstract text available
Text: MIMMF200Y040DK1 400V 200A FRED Module RoHS Compliant PRODUCT FEATURES Ultrafast Reverse Recovery Time Soft Reverse Recovery Characteristics Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package APPLICATIONS Inversion Welder
|
Original
|
MIMMF200Y040DK1
MIMMF200Y040DK1
|
PDF
|
MIMMG200D060B6N
Abstract: AC welder circuit diagram
Text: MIMMG200D060B6N 600V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · Integrated Gate Resistor APPLICATIONS · Invertor · Convertor · Welder GD Series Module
|
Original
|
MIMMG200D060B6N
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG200D060B6N
AC welder circuit diagram
|
PDF
|
MIMMG200S060B6N
Abstract: No abstract text available
Text: MIMMG200S060B6N 600V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · Integrated Gate Resistor APPLICATIONS · Invertor · Convertor · Welder GS Series Module
|
Original
|
MIMMG200S060B6N
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG200S060B6N
|
PDF
|
MIMMG200DR060UK
Abstract: invertor
Text: MIMMG200DR060UK 600V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GD Series Module
|
Original
|
MIMMG200DR060UK
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG200DR060UK
invertor
|
PDF
|
MIMMG200DR060B
Abstract: No abstract text available
Text: MIMMG200DR060B 600V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GD Series Module
|
Original
|
MIMMG200DR060B
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG200DR060B
|
PDF
|
dc ac power ups circuit diagram
Abstract: Diode B2x QM200 E80276 QM200DY-2HB
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-2HB • • • • • IC Collector current . 200A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
|
Original
|
QM200DY-2HB
E80276
E80271
dc ac power ups circuit diagram
Diode B2x
QM200
E80276
QM200DY-2HB
|
PDF
|
QM200HA-2H
Abstract: E80276 QM200HA2H
Text: MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-2H • • • • • IC Collector current . 200A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
|
Original
|
QM200HA-2H
E80276
E80271
QM200HA-2H
E80276
QM200HA2H
|
PDF
|
|
|
MIMMG200DR060UZA
Abstract: No abstract text available
Text: MIMMG200DR060UZA 600V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GD Series Module
|
Original
|
MIMMG200DR060UZA
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG200DR060UZA
|
PDF
|
MIMMG200DR060UZK
Abstract: No abstract text available
Text: MIMMG200DR060UZK 600V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GD Series Module
|
Original
|
MIMMG200DR060UZK
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG200DR060UZK
|
PDF
|
Diode B2x
Abstract: E80276 QM200DY-HB
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB • • • • • IC Collector current . 200A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750
|
Original
|
QM200DY-HB
E80276
E80271
400mA
Diode B2x
E80276
QM200DY-HB
|
PDF
|
CM200DY-12H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DY-12H HIGH POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM200DY-12H • • • • • 1C. 200A VCES. 600V Insulated Type
|
OCR Scan
|
CM200DY-12H
E80276
E80271
CM200DY-12H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750
|
OCR Scan
|
QM200DY-24B
QM2000Y-24B
E80276
E80271
|
PDF
|
transistor eb 2030
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type
|
OCR Scan
|
QM200DY-HB
E80276
E80271
transistor eb 2030
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-24B lc Collector current.200A Collector-emitter voltage 1200V hFE DC current gain. 750 Insulated Type UL Recognized
|
OCR Scan
|
QM200DY-24B
E80276
E80271
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-24 lc Collector current. 200A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized
|
OCR Scan
|
QM200HA-24
E80276
E80271
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-2H lc Collector current. 200A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
|
OCR Scan
|
QM200HA-2H
E80276
E80271
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-24 lc Collector current. 200A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized
|
OCR Scan
|
QM200DY-24
E80276
E80271
|
PDF
|
