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    200CYCLES Search Results

    200CYCLES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DAV11W1S500A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 11W1 Socket Right Angle Solder 40A, Europe Standard, 200Cycles, Front:Female Screw Lock UNC 4.40, Back:Without Accessory on PCB. Visit Amphenol Communications Solutions
    DCV21WA4S500H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 21WA4 Socket RA Solder 40A, Europe Standard, 200Cycles, Front:Female Screw Lock UNC 4.40, Back:Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DCL27W2S500H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 27W2 Socket Right Angle Solder 40A, Europe Standard, 200Cycles, Front:Threaded Insert M3, Back:Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DBO17W2S500A30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 17W2 Socket Right Angle Solder 30A, Europe Standard, 200Cycles, Front: Threaded Insert UNC 4.40, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DCV21WA4S500G30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 21WA4 Socket RA Solder 30A, Europe Standard, 200Cycles, Front:Female Screw Lock UNC 4.40, Back:Harpoons for 1.6mm PCB Thickness. Visit Amphenol Communications Solutions
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    200CYCLES Price and Stock

    Amphenol Corporation D09S24A4PA00LF

    D-Sub Standard Connectors 9P SLDR DSUB SOCKET
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    TTI D09S24A4PA00LF Tray 360 180
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    200CYCLES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235 PDF

    3329S

    Abstract: No abstract text available
    Text: DB LECTRO Inc. 6.8x4.7 Circularity/ Single Turn /Trimming Potentiometer - 3329S -.Install dimension. Electrical Characteristics Standard Resistance Range.50Ω～ 2MΩ Resistance Tolerance.±10%


    Original     		3329S 100Vac) 500Vac Range000 30min, 30min 10500Hz 390m/s2 4000cycles 1000h, PDF

    3386P103

    Abstract: 3386-P-103 3386p
    Text: DB LECTRO Inc. 9.6x9.6 Square/ Single Turn /Trimming Potentiometer - 3386P- .Install dimension. .Mutual dimension. Electrical Characteristics Standard Resistance Range.50Ω～2MΩ


    Original     		3386P-- 100Vac) 600Vac 30min, 30min 100m/s2 1000cycles 1000h 200cycles 3386----P--------103 3386P103 3386-P-103 3386p PDF

    GDDR

    Abstract: K4D553238E-JC33 k4d553238e-jc40
    Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4D553238E-JC 256Mbit 32Bit 144-Ball K4D553238E-JC33/36 15tCK 14tCK 10tCK GDDR K4D553238E-JC33 k4d553238e-jc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: DB LECTRO Inc. 9.6x9.6 Square/ Single Turn /Trimming Potentiometer - 3386C-.Install dimension. .Mutual dimension. Electrical Characteristics Standard Resistance Range.50Ω～2MΩ


    Original     		3386C-. 100Vac) 600Vac 30min, 30min 100m/s2 1000cycles 1000h 200cycles 3386----C--------103 PDF

    Untitled

    Abstract: No abstract text available
    Text: DB LECTRO Inc. 7x7.2 Square/Single Turn/Trimming Potentiometer - 3362W- .Install dimension. .Mutual dimension. Electrical Characteristics Standard Resistance Range.50Ω～2MΩ Resistance Tolerance.±10%


    Original     		362W-- 500Vac) 700Vac 30min 500Hz 390m/s2 4000cycles 1000h, R1100M 200cycles PDF

    cc 052

    Abstract: No abstract text available
    Text: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		THMD51E30B70 THMD51E30B 864-word 72-bit TC59SM803BFT 72-bit Refre15 cc 052 PDF

    IS43R32800

    Abstract: 43R32800
    Text: IS43R32800 8Mx32 256Mb DDR Synchronous DRAM FEATURES • Vdd/Vddq=2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)


    Original     		IS43R32800 8Mx32 256Mb IS43R32800 144-Ball) 43R32800 PDF

    NT5DS4M32EF-25

    Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
    Text: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.


    Original     		NT5DS4M32EF 4Mx32 128Mbit 32Bit 144-Ball 144-Balla NT5DS4M32EF-25 NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4 PDF

    FI-X30SSL-HF

    Abstract: wy 636 transistor lg philips LCD panel 17" Connector 30pin lcd lg FI-X30ssl LC230WX3 LG 32" TV lcd power supply S14B-PH-SM3 LG LCD POWER SUPPLY connector 30 pins LCD LG Philips
    Text: LC230WX3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL Preliminary Specification ( ● ) Final Specification Title BUYER 23.0” WXGA TFT LCD SUPPLIER General MODEL LG.Philips LCD Co., Ltd. *MODEL LC230WX3 SUFFIX SLA1 *When you obtain standard approval,


    Original     		LC230WX3 FI-X30SSL-HF wy 636 transistor lg philips LCD panel 17" Connector 30pin lcd lg FI-X30ssl LC230WX3 LG 32" TV lcd power supply S14B-PH-SM3 LG LCD POWER SUPPLY connector 30 pins LCD LG Philips PDF

    TSR3329

    Abstract: No abstract text available
    Text: Suntan TSR-3329 CIRCULARITY TRIMMING POTENTIOMETER „ „ Electrical Characteristic Single Turn / Cermet / Industrial / Sealed 3 Terminal Styles Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10% Resistance Tolerance Absolute Minimum Resistance


    Original     		TSR-3329 50---2M 100Vac) 500Vac 250ppm/ 30min, 30min 10---500Hz, TSR3329 PDF

    TSR-3362

    Abstract: No abstract text available
    Text: Suntan TSR-3362 SQUARE TRIMMING „ „ Electrical Characteristic POTENTIOMETER Single Turn / Cermet / Industrial / Sealed 7 Terminal Styles Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10% Resistance Tolerance Absolute Minimum Resistance


    Original     		TSR-3362 50---2M 500Vac) 700Vac 250ppm/ 30min, 30min 10---500Hz, TSR-3362 PDF

    3006p suntan

    Abstract: 3006P 203 3006P 103 TSR-3006P 3006p 104 3006P 3006P 102 3006P 502
    Text: Suntan T S R - 3 0 0 6 R E C TA N G U L A R T R I M M I N G P O T E N T I O M E T E R „ „ Electrical Characteristic Multiturn / Cermet / Industrial / Sealed Wide Range Of Resistance Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10%


    Original     		50---2M TSR-3006p 100Vac) 640Vac 250ppm/ 30min, 30min 10---500Hz, 3006p suntan 3006P 203 3006P 103 TSR-3006P 3006p 104 3006P 3006P 102 3006P 502 PDF

    MARKING UAB

    Abstract: No abstract text available
    Text: Suntan TSR-3323 SQUARE TRIMMING „ „ Electrical Characteristic POTENTIOMETER Single Turn / Cermet / Industrial / Sealed 4 Terminal Styles Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10% Resistance Tolerance Absolute Minimum Resistance


    Original     		TSR-3323 50---2M 500Vac) 707Vac 250ppm/ 30min, 30min 10---500Hz, 75mm55, MARKING UAB PDF

    1000H

    Abstract: ET3362
    Text: ET3362 Cermet Trimming Potentiometer Features: How to order: ELECSOUND Standard Resistance Table: Resistance Resistance Ohms Code Square/Single-Turn/ Cermet/ Industrial/ Sealed 10 Terminal Styles Rohs Compliant Electrical Characteristics Standard Resistance Range: 10Ω - 2MΩ


    Original     		ET3362 700VAC 50pcs 100ppm/ 10-500Hz 390m/s, 4000cycles, 1000H 200Cycles PDF

    DD 127 D

    Abstract: No abstract text available
    Text: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		THMD12N11 216-WORD 64-BIT THMD12N11B TC59WM815BFT 64-bit DD 127 D PDF

    ET3006

    Abstract: 200-201 1000H tube el 503 el 502
    Text: ET3006 Cermet Trimming Potentiometer Features: ELECSOUND How to order: Standard Resistance Table: Resistance Resistance Ohms Code Rectangular/Multiturn/ Cermet/ Industrial/ Sealed 3 Terminal Styles Rohs Compliant 10 20 100 200 50 100 200 500 1000 2000


    Original     		ET3006 640VAC 25pcs 100ppm/ 10-500Hz, 390m/s, 4000cycles, 1000H 200Cycles 200-201 tube el 503 el 502 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMD51E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		THMD51E30B70 THMD51E30B 864-word 72-bit TC59WM803BFT 72-bit PDF

    AN 7580

    Abstract: TC59WM815BFT
    Text: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		THMD12E11 216-WORD 72-BIT THMD12E11B TC59WM815BFT 72-bit AN 7580 PDF

    DQSO

    Abstract: TC59WM807BFT
    Text: TOSHIBA THMD25N11B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		THMD25N11 432-WORD 64-BIT THMD25N11B TC59WM807BFT 64-bit DQSO PDF

    Untitled

    Abstract: No abstract text available
    Text: Target Spec 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 0.2 January 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 1.2 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238I-VC 128Mbit 144-Ball PDF

    Untitled

    Abstract: No abstract text available
    Text: Primarily 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.1 Sep 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238I-VC 128Mbit 144-Ball PDF