Untitled
Abstract: No abstract text available
Text: SPD3909 Thru SPD3913 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SPD39 _ _ _ 30A, 200nsec, 50-400 V
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SPD3909
SPD3913
SPD39
200nsec,
MIL-PRF-19500.
RC0114B
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SLVS632
Abstract: No abstract text available
Text: TPS5430 www.ti.com SLVS632 – JANUARY 2006 5.5-V to 36-V, 3-A STEP-DOWN SWIFT CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Wide Input Voltage Range: 5.5 V to 36 V Up to 3-A Continuous 4-A Peak Output Current
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TPS5430
SLVS632
110-m
SLVS632
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Untitled
Abstract: No abstract text available
Text: Datasheet Dual Synchronous Buck Converter BD93291EFJ ●Description The BD93291EFJ is a dual synchronous buck converter. It integrates wide input voltage range 8.0V to 26V synchronous buck converter and low input voltage (Vout1 : 5.0V) synchronous buck converter.
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BD93291EFJ
BD93291EFJ
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 25A /l200V /200nsec KSF25A120B FEA TU RES 3 31.209 47' 185' 1— 1 o Sim ilar to TO-247AC Case 1 5 .9 6 2 6 ) i I’ i5.3(.é«rV 3 ^ DIA 5.71.224) 5 3 (2081 O U ltra-Fast Rcovery a. Î r. r - I) - 20.3(.8i>0> 19 71.773) 43U 69) OLow Forward V oltage Drop
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/l200V
/200nsec
KSF25A120B
O-247AC
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L43C
Abstract: teledyne philbrick 1430 TELEDYNE PHILBRICK 1435 A/SMD l43c
Text: WTELECYNE PHILBRICK I 1430 Fast Settling FET Input Operational Amplifier The 1430 is a high speed, precision, jiybrkj operational amplifier that combines fast settling times, low bias cur rents, high slew rate, wide bandwidth, and good phase margin. A guaranteed settling time of 200nsec (for a full
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200nsec
L43C
teledyne philbrick 1430
TELEDYNE PHILBRICK 1435
A/SMD l43c
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Untitled
Abstract: No abstract text available
Text: BU RR -BR O W N [ ] OPA12HT Wide Temperature Range Fast-Slewing OPERATIONAL AMPLIFIER FEATURES • -55°C to + 175 °C SPECIFICATIO N S • 80V/Msec MIN S LEW R ATE 120 V/M*ec, typ • 200nsec S E T T LIN G T IM E , typ • H ERM ETIC PAC KAG E W ITH STANDARD PINO UT
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OPA12HT
200nsec
0PA12HT
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5046C
Abstract: No abstract text available
Text: A S - 5 0 4 0 / A S - 5 0 5 1 Fam ily High Level CMOS Analog Gates FjflEM n L GENERAL DESCRIPTION FEATURES • Switches Greater Than 20 V p p Signals W ith • • Quiescent C urrent Less Than IfjA Overvoltage P rotection to ±25V • Break-Before-Make S w itching to F F 200nsec,
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200nsec,
300nsec
AS-5050M
AS-5051C
AS-5049M
AS-5050C
AS-5045M
AS-5046C
5046C
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Untitled
Abstract: No abstract text available
Text: l.lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec FAST RECOVERY DIODE 10 D F1 10DF2 FEATURES «Miniature Size ° Super Fast Recovery * Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package Available
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200nsec
10DF2
10DF1
bL15123
0GG2143
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ir 30df2
Abstract: 30DF1 30DF2 30df 300F2 QDD2153 t10039 Diode 30df2
Text: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES ° Super Fast Recovery ° Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts through 600 Volts Types Available MAXIMUM RATINGS \ type 30DF1
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A/100â
00V/trr
200nsec
30DF1
30DF2
3C051)
T10039)
30DF1
122-C
ir 30df2
30DF2
30df
300F2
QDD2153
t10039
Diode 30df2
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 25 A/1200V/200nsec KSF25A120B FEATURES 3.64.142 ni* kîïilM)“ o Similar to TO-247AC Case o Ultra-Fast Rcovery oLow Forward Voltage Drop O Low Power Loss, High Efficiency o High Surge Capability oH igh Voltage KSF25A120B Dimensions in mm Inches)
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/1200V/200nsec
KSF25A120B
O-247AC
00A/jks,
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25A 1200V
Abstract: KSF25A120B ksf2 KSF2SA120B
Text: FAST RECOVERY DIODE 25A/1200V/200nsec KSF2SA120B FEATU RES o Sim ilar to TO-247AC Case o Ultra-Fast Rcovery o L o w Forw ard V oltage Drop O Low Pow er Loss, High Efficiency o High Surge Capability o H ig h Voltage Dimensions in mm Inches ApplX>X‘ Net Weight :5-65 GramS
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5A/1200V/200nsec
KSF2SA120B
O-247AC
KSF25A120B
bbl51E3
25A 1200V
KSF25A120B
ksf2
KSF2SA120B
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10DF1
Abstract: 10DF2 n439
Text: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability
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A/100--
00V/trr
200nsec
10DF1
10DF2
10DF1
10DF2
n439
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DAC90BG
Abstract: DAC90SG
Text: B U R R -B R O W N « DAC90 Monolithic Microcircuit DIGITAL-TO-ANALOG CONVERTER FEATURES • 8-BIT RESOLUTION • CURRENT OUTPUT • FAST SETTLING 200nsec to ±0.2% • HERMETIC DUAL-IN-LINE PACKA6E • LOW COST • INTERNAL REFERENCE AND SCALING RESISTORS
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DAC90
200nsec
16-pin
DAC90BG
DAC90SG
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DAC90BG
Abstract: DAC90 DAC90SG PDS-347C MIL-STD-83
Text: BU R R -BR O W N I b b DAC90 i Monolithic Microcircuit D IG ITA L-TO -A N A LO G CONVERTER FEATURES • 8-BIT RESOLUTION • CURRENT OUTPUT I • FAST SETTLING 200nsec to ± 0 .2 % • HERMETIC DUAL-IN-LINE PACKA6E • LOW COST • INTERNAL REFERENCE AND SCALING RESISTORS
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DAC90
200nsec
DAC90
16-pin
DAC90BG
DAC90SG
200nsec.
100kS2
-15VDC
DAC90BG
DAC90SG
PDS-347C
MIL-STD-83
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MN376
Abstract: htc-0300a MN376H
Text: MN376 200nsec 12-Bit LIN EA R TR A C K -H O L D A M P L IF IE R MICRO NETWORKS DESCRIPTION • 200nsec Max Acquisition Time 10V Step to ±0.01% • 100nsec Max Track-to-Hold Settling Time • ±20psec Aperture Jitter • Use with MN5245/46 for 1MHz 12-Bit A/D Conversions;
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MN376
200nsec
12-Bit
100nsec
20psec
MN5245/46
MN5249
MN0300A,
MN376
htc-0300a
MN376H
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Untitled
Abstract: No abstract text available
Text: 10EF1 10EF2 l.lA /1 0 0 ~ 2 0 0 V /tr r : 200nsec FAST RECOVERY DIODE FEATURES ° Miniature Size 2.7 .106 MAX DIA * Super Fast Recovery o Low Forward Voltage Drop 0.7(.027) DIA 0.5(.020) o Low Power Loss, High Efficiency 2 7 ( 1 .0 6 ) MIN ° High Surge Capability
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10EF1
10EF2
200nsec
7C027)
10EF1
bbl51E3
0Q02141
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10EF2
Abstract: 10EF1
Text: FAST RECOVERY DIODE l .lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec 1 0 E F 1 10 EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available
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lA/100
00V/trr
200nsec
10EF1
10EF2
10EF1
0D15G7
10EF2
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10EF1
Abstract: S 437 Diode 10EF2
Text: FAST RECOVERY DIODE 1.1A /100— 2 0 0 V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability ° 2 6mm and 52mm Inside Tape Spacing Package Available
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200nsec
10EF1
10EF2
10EF1
S 437 Diode
10EF2
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MK4816-5
Abstract: MK3880 MK4816-3 LCSC 24 MK4116 MK4816-4 MK4816 ram
Text: MOSTEK FElDJEDMâEl 2K x 8-BIT PSEUDOSTATIC RAM M K 4 8 1 6 N /J -3 /4 /5 FEATURES □ O n-chip substrate bias generator □ Organized as 2048 x 8 bits Part Num ber Access Time Cycle Time M K 48 16-3 200nsec 430nsec □ Low power - 1 50m W active 25 m W standby
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MK4816
MK4816-3
200nsec
430nsec
MK4816-4
250nsec
550nsec
MK4816-5
300nsec
675nsec
MK3880
LCSC 24
MK4116
MK4816 ram
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TE10A
Abstract: No abstract text available
Text: MN376 200nsec 12- Bi t LIN EA R T R A C K -H O L D A M P L IF IE R H in r^ n n „ MICRO NETWORKS DESCRIPTION • 200nsec Max Acquisition Time 10V Step to ±0.01% • 100nsec Max Track-to-Hold Settling Tim e • +20psec Aperture Jitter • Use with MN5245/46 for 1MHz
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MN376
200nsec
100nsec
20psec
MN5245/46
12-Bit
MN5249
MN0300A,
HTC-0300A,
TE10A
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES o Super Fast Recovery 5.8 .23 DIA °law Forward Voltage Drop 1.5(.059)DIA 1.30051) « Low Power Loss, High Efficiency 21(.83) MIN ° High Surge Capability ° 100 Volts through 600 Volts Types Available
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A/100â
00V/trr
200nsec
30DF1
30DF2
30DF1
0QG2153
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10EF1
Abstract: 10EF2
Text: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability
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lA/100
00V/trr
200nsec
10EF1
10EF2
10EF1
cond10
D0D2142
10EF2
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30DF1
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 3 .3 A /1 0 0 — 2 0 0 V /trr : 200nsec 30DF1 30DF2 FEA TUR ES « Super Fast Recovery 5.8I.231DIA ° Low Forward Voltage Drop 1.51.059 D IA 1.31.051) o Low Power Loss, High Efficiency °High Surge Capability 2M.83) M IN ° 100 Volts through 600 Volts Types Available
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200nsec
30DF1
30DF2
231DIA
30DF2
18ature
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P8085AH
Abstract: TMP8085AP TMP8085AP-2 TMP8085 TMP8156P MPU85-9
Text: TO SHIBA TMP8085A TMP8085AP-2/TMP8085AHP-2 8-BIT MICROPROCESSOR 1. GENERAL DESCRIPTION The TMP8085AP-2/TMP8085AHP-2, hereafter on referred to as TMP8085A, is a 8 bit micro processing unit MPU . TMP8085A uses a multiplexed data bus. The address is split between the 8 bit address bus and the 8 bit data bus. The on-chip address latches of
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TMP8085A
TMP8085AP-2/TMP8085AHP-2
TMP8085AP-2/TMP8085AHP-2,
TMP8085A,
TMP8085A
TMP8155P-2/TMP8156P-2
TMP8085A.
200nSec)
TMP8085AP-2:
P8085AHP-2:
P8085AH
TMP8085AP
TMP8085AP-2
TMP8085
TMP8156P
MPU85-9
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