1E14
Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460
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JANSR2N7396
FSL230R4
R2N73
1E14
2E12
FSL230R4
JANSR2N7396
Rad Hard in Fairchild for MOSFET
5200BR
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Untitled
Abstract: No abstract text available
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7396
FSL230R4
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSL230D,
FSL230R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FRL230D FRL230H FRL230R 1E14
Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL230D,
FRL230R,
FRL230H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRL230D
FRL230H
FRL230R
1E14
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1E14
Abstract: 2E12 FRL230D FRL230H FRL230R Rad Hard in Fairchild for MOSFET
Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL230D,
FRL230R,
FRL230H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRL230D
FRL230H
FRL230R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL230D,
FRL230R,
FRL230H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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JANSR2N7275
FRL230R4
1000K
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1E14
Abstract: 2E12 FRL230R4 JANSR2N7275
Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7275
FRL230R4
1000K
1E14
2E12
FRL230R4
JANSR2N7275
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FRL230
Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7275
FRL230R4
1000K
FRL230
1E14
2E12
FRL230R4
JANSR2N7275
FRL-230
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1E14
Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL230D,
FSL230R
1E14
2E12
FSL230D
FSL230D1
FSL230D3
FSL230R
FSL230R1
FSL230R3
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relay 12v 100A
Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7396
FSL230R4
relay 12v 100A
1E14
2E12
FSL230R4
JANSR2N7396
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1E14
Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL230D,
FSL230R
1E14
2E12
FSL230D
FSL230D1
FSL230D3
FSL230R
FSL230R1
FSL230R3
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d5n20
Abstract: STD5N20L STD5N20LT4 D5N20L
Text: STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD5N20L 200 V < 0.7 Ω 5A 33 W • ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE
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STD5N20L
STD5N20L
STD5N20LT4
D5N20L
d5n20
STD5N20LT4
D5N20L
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STD5N20
Abstract: No abstract text available
Text: STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY MOSFET TYPE STD5N20 • ■ ■ ■ VDSS RDS on ID 200 V < 0.8 Ω 5A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL
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STD5N20
O-252
STD5N20
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STD5N20
Abstract: No abstract text available
Text: STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY MOSFET TYPE STD5N20 • ■ ■ ■ VDSS RDS on ID 200 V < 0.8 Ω 5A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL
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STD5N20
O-252ronics.
STD5N20
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Untitled
Abstract: No abstract text available
Text: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL230R4
JANSR2N7396
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both
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FRL230R4
e1998
JANSR2N7275
1000K
MIL-STD-750,
MIL-S-19500,
500ms;
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diode PJ 65 MG
Abstract: 5a 12v regula
Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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460i2
FSL230D,
FSL230R
MIL-STD-750,
MIL-S-19500,
500ms;
diode PJ 65 MG
5a 12v regula
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Untitled
Abstract: No abstract text available
Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSL230D,
FSL230R
0-460S2
36MeV/mg/cm2
O-205AF
254mm)
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Untitled
Abstract: No abstract text available
Text: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a
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FSL923A0D,
FSL923A0R
-200V,
670J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: y*Rg*s FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRL230D,
FRL230R,
FRL230H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: FSL923AOD, FSL923AOR H A R R IS S E M I C O N D U C T O R 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 5A, -200V, ro s O N = 0.670Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O SFETs
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-200V,
FSL923AOD,
FSL923AOR
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
-160V,
500ms;
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Untitled
Abstract: No abstract text available
Text: FSL923AOD, FSL923AOR 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -200V, ros ON = 0-670Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL923AOD,
FSL923AOR
-200V,
O-205AF
254mm)
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632-S
Abstract: No abstract text available
Text: fn H a r r i s U U FRL230D, FRL230R, S E M I C O N D U C T O R F R IL 2 3 H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRL230D,
FRL230R,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
632UIS
B32PH0T0
632-S
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