Apogee
Abstract: EB-2060X EB-2060 transistor subwoofer circuit diagram OMRON 1230 volume potentiometer 1k ohm subwoofer PREAMP circuit diagram C41 CENTRALAB CT622LY SMD electrolytic capacitor 100uF 63V
Text: EB-2060x DDX All-Digital, High Efficiency Evaluation Amplifier GENERAL DESCRIPTION FEATURES The EB-2060x is an evaluation amplifier that showcases Apogee’s all-digital, high efficiency Direct Digital Amplification DDX technology. The board features a DDX-2000 Controller and DDX-2060
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EB-2060x
EB-2060x
DDX-2000
DDX-2060
DDX-2000/2060
Apogee
EB-2060
transistor subwoofer circuit diagram
OMRON 1230
volume potentiometer 1k ohm
subwoofer PREAMP circuit diagram
C41 CENTRALAB
CT622LY
SMD electrolytic capacitor 100uF 63V
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Untitled
Abstract: No abstract text available
Text: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech GmbH, Finsinger Feld 1, 82551 Ottobrunn Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications,
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H-2060
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Ericsson PBC 6200
Abstract: ericsson PBC 6500 NTP 7513 pbc 05 ericsson 74LSO4 LM356 LM356 IC circuit diagram TE 555-1 ntp 3200 ic digital amplifier PEB 2050 N V2.2
Text: ICs for Communications Signal Processing Codec Filter SICOFI , SICOFI®-2 User’s Manual 03.92 PEB 2060; PEB 2260 Revision History: Original Version 03.92 Previous Releases: Page Subjects changes since last revision Edition 03.92 This edition was realized using the software system FrameMaker.
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D-8000
Ericsson PBC 6200
ericsson PBC 6500
NTP 7513
pbc 05 ericsson
74LSO4
LM356
LM356 IC circuit diagram
TE 555-1
ntp 3200 ic digital amplifier
PEB 2050 N V2.2
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Untitled
Abstract: No abstract text available
Text: Advantages of NPC Inverter Topologies with Power Modules Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. Many applications are driven by the
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H-2060
1080kVA
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Untitled
Abstract: No abstract text available
Text: Power Module with Additional Low Inductive Current Path Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) 1 Abstract Parasitic inductances are a major problem with power modules, in particular in fast switching
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H-2060
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Untitled
Abstract: No abstract text available
Text: Advantages of NPC Inverter Topologies with Power Modules July 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications are running
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H-2060
720kVA
900kVA
1080kVA
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Apogee
Abstract: 2060 DDX-2060 DDX2060 DDX-2000 24v Audio amplifier class d 24v Audio amplifier class d single supply 24v up Audio amplifier 2x35W diode e 2060
Text: DDX-2000/2060 All-Digital High Efficiency Power Amplifier GENERAL DESCRIPTION FEATURES • HIGH OUTPUT CAPABILITY 2x35W into 8 Ω @ <1% THD+N 1x70W into 4 Ω @ <1% THD+N • SINGLE SUPPLY +9V to +30V • HIGH EFFICIENCY, >88% • DIGITAL VOLUME CONTROL, ANTICLIPPING AND AUTOMATIC MUTE
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DDX-2000/2060
2x35W
1x70W
DDX-2000
DDX-2060
Apogee
2060
DDX2060
24v Audio amplifier class d
24v Audio amplifier class d single supply
24v up Audio amplifier
diode e 2060
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Untitled
Abstract: No abstract text available
Text: Design Concept for a Transformerless Solar Inverter Dec. 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Vincotech is able to offer a wide spectrum of power modules for solar applications. In the following we
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H-2060
FZ06BIA045FH
FZ06BIA045FH02.
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DDX-2060
Abstract: DDX2060 car class d audio 50W DDX-8000 ddx-4100a DDX-4100 100w Mono CLASS D amplifier diagram 2060 data sheet DDX-2000 100 100w stereo amplifier
Text: DDX-2060 All-Digital High Efficiency Power Amplifier FEATURES • HIGH OUTPUT CAPABILITY • 2 x 35W into 8Ω or 1 x 70W into 4Ω @ <1% THD • 2 x 50W into 8Ω or 1 x 100W into 4Ω @ 10% THD • SINGLE SUPPLY +9V to +30V • COMPACT SURFACE MOUNT PACKAGE
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DDX-2060
DDX-2060
Rev09
DDX2060
car class d audio 50W
DDX-8000
ddx-4100a
DDX-4100
100w Mono CLASS D amplifier diagram
2060 data sheet
DDX-2000
100 100w stereo amplifier
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2SC2060
Abstract: E8 55A TO-92MOD
Text: TO-92MOD Plastic-Encapsulate Transistors 2S C 2060 TRANSISTO R NPN F E AT U RES Power dissipation TO-92MOD P cm : C ollector current 1 .EMITTER Icm: 2 .COLLECTOR I 1A C ollector-base voltage 3 .BASE I 0.75W (Tamb=25°C) V ( br )c b o : 40 V O perating and storage jun ction tem perature range
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O-92MOD
2SC2060
O-92MOD
E8 55A
TO-92MOD
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HA911
Abstract: lh002 HA-911 MA702 CD4046 MC1554 HA-2500 HA-2510 HA-2512 HA-2522
Text: BURN-IN CIRCUITS HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA-2620, HA-2622, HA-2050, HA-2050A, HA-2060, HA-2060A H <a "1 TO-99 3 j— N OTES: T a = +125°C R- = 1 M e g o h m C-] = 0.01 jUF, 1 0 0 V HA-2000 NOTES:
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HA-909
HA-909,
HA-2500,
HA-2502,
HA-2510,
HA-2512,
HA-2520,
HA-2522,
HA-2600,
HA-2602,
HA911
lh002
HA-911
MA702
CD4046
MC1554
HA-2500
HA-2510
HA-2512
HA-2522
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Untitled
Abstract: No abstract text available
Text: APTEK T E C H / A P T E K MICROSYS 5SE D • //eicapteKop^ ¿ a p te k aptey^ ÜÔ'ÎSITb 0 0 0 0 M Ô 3 f laptekaptek api* a p t e k t e c h n o l o g i e s , i n c . aptek <*jr V fi ■ A M S 2060 Active Termination Interface Circuit 1 J PRELIMINARY DESCRIPTION
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671-BO01
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AT 2005A
Abstract: HA-2000A fet preamp HA-2500 HA-2502 HA-2510 HA-2512 HA-2520 HA-2522 HA-200-5
Text: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A H <a "1 TO-99 3 j— NOTES: T a = + 1 2 5 °C R- = 1 M e g o h m C-] = 0 .0 1 jU F , 1 0 0 V
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HA-909
HA-909,
HA-2500,
HA-2502,
HA-2510,
HA-2512,
HA-2520,
HA-2522,
HA-2600,
HA-2602,
AT 2005A
HA-2000A
fet preamp
HA-2500
HA-2502
HA-2510
HA-2512
HA-2520
HA-2522
HA-200-5
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AT 2005A
Abstract: 106 25K 011 HA-2000 HA-2000A HA-2050A HA-2060 HA-2060A HA-2500 HA-2502 HA-2510
Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for M ilita ry Applications -55°C to +125°C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S
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HA-909
HA-205O
HA-2050A
HA-2060
HA-2060A
HA-2500
HA-2502
HA-2510
HA-2512
HA-2000
AT 2005A
106 25K 011
HA-2000A
HA-2060A
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2n555
Abstract: No abstract text available
Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3
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2N155
2N176
2N235A
2N236A
MT-36
2N236B
2N242
2N255
2N256
2N268
2n555
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LS 74151
Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363
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OCR Scan
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MT-36
2N155
2N176
2N235A
2N236A
2N236B
2N242
2N255
2N256
2N268
LS 74151
2N555
MT27
220 hfk
Germanium Power Devices
MT-27
2N2553
2N297A
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2N3214
Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Text: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883
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afl4fl352
DDD0111
TMI\I515T0R
Tc-25Â
2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
2N3214
TO37
2N2283
2N2282
TO13
diode e 2060
MT28
2n1755
2N1044
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2n3215
Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
Text: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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OCR Scan
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2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
MT-28
MT-28
2n3215
TO13
MT28
diode e 2060
2n2284
2N1044
2N1045
2N2556
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2N3215
Abstract: MT28 TO13 2n3214 Germanium power
Text: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r
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3TM7375
2N2668
2N2669
2N2670
2N1042
2N1043
2N1044
2N1045
2N2556
2N2557
2N3215
MT28
TO13
2n3214
Germanium power
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germanium transistors NPN
Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A
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2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
germanium transistors NPN
TO13
MT28
Germanium power
2N1044
2N1045
2N2556
2N2557
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2N2067
Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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OCR Scan
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2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
MT-28
MT-28
2N2067
2N3214
2N158
germanium transistors NPN
2N3215
TO13
MT28
2N1759
2N158A
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2N158A
Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
Text: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670
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2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
2N158A
germanium NPN
2N1761
2n1218
2N2067
germanium transistors NPN
TO13
MT28
2N1044
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Untitled
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
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2N3440A
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) [email protected]/,02 5
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OCR Scan
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3440A
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