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    20A 100 V LOW VF Search Results

    20A 100 V LOW VF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    20A 100 V LOW VF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR20A300CT SBR20A300CTB SBR20A300CTFP Green 20A SBR SUPER BARRIER RECTIFIER Product Summary @TA = +25°C VRRM (V) 300 IO (A) 20 VF MAX (V) 0.92 Features and Benefits IR MAX (µA) 100 • Low Forward Voltage Drop  Excellent High Temperature Stability


    Original     		SBR20A300CT SBR20A300CTB SBR20A300CTFP SBR20A300 DS30993 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBRT20U100SLP Green NEWINFORMATION PRODUCT ADVANCE Product Summary VRRM V IO (A) 100 20 20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI 5060 Features and Benefits VF(MAX) (V) @ +25°C 0.70 • IR(MAX) (mA) @ +25°C 0.3 Reduced ultra-low forward voltage drop (VF); better efficiency


    Original     		SBRT20U100SLP DS36702 PDF

    STGW20NB60KD

    Abstract: STMicroelectronics 0560
    Text: STGW20NB60KD N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE VCES VCE sat (Max) @ 25°C IC @ 100°C STGW20NB60KD 600 V < 2.8 V 20 A • ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-LOSSES LOW GATE CHARGE


    Original     		STGW20NB60KD O-247 STGW20NB60KD STMicroelectronics 0560 PDF

    SGL20N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGL20N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGL20N60RUFD O-264 SGL20N60RUFD PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU36B1WDPF 360V - 20A - Dual Diode Ultra Fast Recovery Diode R07DS1135EJ0300 Rev.3.00 Dec 06, 2013 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)


    Original     		RJU36B1WDPF R07DS1135EJ0300 PRSS0004AE-C PDF

    SGH20N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGH20N60RUFD 25duct SGH20N60RUFD PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU3052SDPD-E0 360V - 20A - Single Diode Ultra Fast Recovery Diode R07DS0890EJ0100 Rev.1.00 Oct 29, 2012 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 20 A, di/dt = 100 A/s  Low forward voltage: VF = 1.4 V typ. (at IF = 20 A)


    Original     		RJU3052SDPD-E0 R07DS0890EJ0100 PRSS0004ZJ-A O-252) PDF

    IRG7PH35UD1PbF

    Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
    Text: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA


    Original     		IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD IRG7PH35UD1PbF IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v PDF

    transistor A6A

    Abstract: 76T marking transistor A6A N
    Text: PD - 97794 IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		IRG7PH35UD1M 1300Vpk O-247AC transistor A6A 76T marking transistor A6A N PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses


    Original     		7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		I27300 GB20XF60K PDF

    irg7ph35u

    Abstract: irg7ph35 ir igbt 1200V 40A 600v 20a IGBT
    Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		IRG7PH35UD1M 1300Vpk TD-020D irg7ph35u irg7ph35 ir igbt 1200V 40A 600v 20a IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		I27307 GB20RF60K PDF

    irg7ph35

    Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses


    Original     		7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1 PDF

    IRG7PH35UD1MPBF

    Abstract: No abstract text available
    Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		IRG7PH35UD1MPbF 1300Vpk O-247AD TD-020Dâ IRG7PH35UD1MPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA


    Original     		IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk JESD47F) O-247AC O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		IRG7PH35UD1M 1300Vpk PDF

    20A igbt

    Abstract: igbt 1200V 20A igbt 20A 1200v igbt 40a 600v current diode 600v 20a IGBT 600v 20a diode IGBT 120A 1200V diode 20khz DIODE 20A 600V
    Text: PROVISIONAL IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Ultrafast npt IGBT Technology • 10 µs Short Circuit capability • Square RBSOA. • New Generation of Antiparallel diode with low Vf


    Original     		IRGP20B120UD-E 20KHz 20A igbt igbt 1200V 20A igbt 20A 1200v igbt 40a 600v current diode 600v 20a IGBT 600v 20a diode IGBT 120A 1200V diode 20khz DIODE 20A 600V PDF

    ESAD92-02

    Abstract: No abstract text available
    Text: ESAD92-02 20A ( 200V / 20A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF


    Original     		ESAD92-02 SC-65 ESAD92-02 PDF

    TS906C2

    Abstract: No abstract text available
    Text: TS906C2 20A ( 200V / 20A ) Outline drawings, mm 4.5 ±0.2 3.0 ±0.3 9.3 ±0.5 1.32 1.5 Max 10 +0.5 0.9 ±0.3 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF


    Original     		TS906C2 TS906C2 PDF

    PA905C6

    Abstract: SC-65 20A 100 V Low VF
    Text: PA905C6 20A ( 600V / 20A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF


    Original     		PA905C6 SC-65 PA905C6 SC-65 20A 100 V Low VF PDF

    F20UP20

    Abstract: ultrafast DIODE
    Text: FFB20UP20S Features • 20A, 200V, Ultrafast Diode Ultrafast recovery, Trr = 45 ns @ IF = 20 A • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFB20UP20S is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use


    Original     		FFB20UP20S FFB20UP20S F20UP20 ultrafast DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGL20N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr= 50nS (Typ) APPLICATIONS * AC & DC Motor controls


    OCR Scan     		SGL20N60RUFD PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGH20N60RUFD CO-PAK IGBT FEATURES TO-3P * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) 1 APPLICATIONS * AC & DC Motor controls


    OCR Scan     		SGH20N60RUFD PDF