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    20A 500V IGBT Search Results

    20A 500V IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    20A 500V IGBT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254 PDF

    G20N50c

    Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
    Text: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs


    Original     		HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D G20N50c g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D PDF

    G20N50c

    Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
    Text: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR


    Original     		HGTP15N40C1, HGTH20N40C1, O-218AC O-220AB HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, G20N50c G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1 PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
    Text: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR


    Original     		HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D 150oC G20N50c g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D PDF

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


    Original     		HGTG20N50C1D O-247 500ns 150oC. AN7254 AN7260) 150oC 100oC G20N50c g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt PDF

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V PDF

    HGTM20N50

    Abstract: HGTM20N
    Text: 3 HARRIS S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features • HGTH-TYPES JEDEC TO-218AC TOP VIEW 15A and 20A, 400V and 500V


    OCR Scan     		HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTM20N50 HGTM20N PDF

    G20N50c

    Abstract: G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40
    Text: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs


    Original     		HGTP15N40C1, HGTH20N40C1, O-218AC O-220AB HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, G20N50c G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40 PDF

    20N50E1

    Abstract: 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1
    Text: m U A Q D ie lÜ HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Packages Features H G TH -TY P E S JE D E C TO -218A C • 15A and 20A, 400V and 500V EMrTTER • V CE ON 2 -5 V COLLECTOR • Tp 1jjs, 0.5(is


    OCR Scan     		HGTP15N40C1, HGTH20N40C1, -218A -220A HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, 20N50E1 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1 PDF

    G20N50c

    Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
    Text: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC


    OCR Scan     		40E1D O-218AC HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) G20N50c 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c PDF

    GT602

    Abstract: IGT6D21 IGT6E21
    Text: Insulated-Gate Bipolar Transistors • IGT6D21, IGT6E21 F ile N um ber N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2128 TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.145 Q Features: ■ Low I/c e i s a h — 2.5V typ. @ 20A


    OCR Scan     		IGT6D21, IGT6E21 IGT6D21 IGT6E21 GT602 PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: IGT8E21 2SA 684 equivalent WE VQE 11 E IGT8D21
    Text: Insulated-Gate Bipolar Transistors- IGT8D21, IGT8E21, IGT8D2.1, IGT8E21 N-Channel Enharicernent-Mode Conductivity-Modulated Power Field-Effect Transistors File N u m b e r 2130 TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.145 Q Features:


    OCR Scan     		IGT8D21, IGT8E21, IGT8E21 IGT8D21 IGT8E21 S18TIV 60iisec, TRANSISTOR BIPOLAR 400V 20A 2SA 684 equivalent WE VQE 11 E PDF

    IXFH20N50

    Abstract: IXFH20N50P3 20n50p 20N50P3 IXFA20N50P3
    Text: Advance Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 500V = 20A Ω ≤ 300mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)


    Original     		O-263 IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 O-220AB O-247 O-220 IXFH20N50 IXFH20N50P3 20n50p 20N50P3 PDF

    IXFP20N50P3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 500V = 20A   300m RDS on TO-220AB (IXFP) TO-263 AA (IXFA)


    Original     		IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 O-220AB O-263 O-247 O-220 IXFP20N50P3 PDF

    50v transformer

    Abstract: irfb20n50kpbf f1010 IRFB20N50K FIGURE13
    Text: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free


    Original     		IRFB20N50KPbF O-220AB 12-Mar-07 50v transformer irfb20n50kpbf f1010 IRFB20N50K FIGURE13 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free


    Original     		IRFB20N50KPbF O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCOND SECTOR bôE ]> 4 3 G2 E 7 1 WÊ 0 Q S G 2 DS HHAS HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 HARRIS SEMICONDUCTOR 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-218AC


    OCR Scan     		HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA M302271 HGTH20N40C1 HGTM20N40C1 HGTP15N40C1 PDF

    f1010

    Abstract: FIGURE13
    Text: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free


    Original     		IRFB20N50KPbF O-220AB O-220AB f1010 FIGURE13 PDF

    PJ 969 diode

    Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
    Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation


    OCR Scan     		t30SE71 HGTG20N50C1D O-247 500ns AN7254 AN7260) M302E71 QD50S67 PJ 969 diode DIODE 25PH 500 pj 809 HGTG20N50C1D 08/bup 3110 transistor PDF

    IXTH20P50P

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET VDSS ID25 IXTH20P50P IXTT20P50P = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH20P50P IXTT20P50P O-247 100ms 20P50P IXTH20P50P PDF

    IXTH20P50P

    Abstract: IXTT20P50P IXTH20P50 20P50P ixtt 20P50P 20P50 250V 10A TF 106 ixth 20p50p
    Text: IXTH20P50P IXTT20P50P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH20P50P IXTT20P50P O-247 100ms 20P50P IXTH20P50P IXTT20P50P IXTH20P50 ixtt 20P50P 20P50 250V 10A TF 106 ixth 20p50p PDF

    Untitled

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIERS SA08 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		546-APEX RANGE--16-500V TE9493 SA08U PDF

    pwm 18 pin

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		546-APEX RANGE--16-500V TE9493 SA08U pwm 18 pin PDF

    motor driver full bridge 20A

    Abstract: h-bridge igbt pwm igbt capacitor charge pump 10KW MO-127 SA08 380v motor igbt
    Text: PULSE WIDTH MODULATION AMPLIFIER SA08 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		546-APEX RANGE--16-500V TE9493 SA08U motor driver full bridge 20A h-bridge igbt pwm igbt capacitor charge pump 10KW MO-127 SA08 380v motor igbt PDF