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20N60B2 Price and Stock

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IXYS Corporation IXSA20N60B2D1 IGBT 600V 35A 190W TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSA20N60B2D1	Box			50	1 - 10 - 100 $2.774 1000 $2.774 10000 $2.774	Buy Now
IXYS Corporation IXSQ20N60B2D1 IGBT 600V 35A 190W TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSQ20N60B2D1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSH20N60B2D1 IGBT 600V 35A 190W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSH20N60B2D1	Bulk			30	1 - 10 - 100 $3.297 1000 $3.297 10000 $3.297	Buy Now
IXYS Corporation IXSP20N60B2D1 IGBT 600V 35A 190W TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSP20N60B2D1	Bulk			50	1 - 10 - 100 $2.7482 1000 $2.7482 10000 $2.7482	Buy Now
IXYS Integrated Circuits Division IXSA20N60B2D1 IGBT DIS.DIODE SINGLE 20A 600V H.SPEED TO263(D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXSA20N60B2D1		1			1 $3.82888 10 $3.82888 100 $3.4808 1000 $3.4808 10000 $3.4808	Buy Now

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20N60B2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	20N60B2D1 IC110 8-06B 405B2
DSEP 15-06A Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072 Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072
Untitled Abstract: No abstract text available Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	20N60B2D1 IC110 5-06A
20N60B2D1 Abstract: No abstract text available Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	20N60B2D1 IC110 8-06B 405B2 20N60B2D1
SP20N60B2D1 Abstract: SP20N60 20N60B2 Text: IXSP 20N60B2 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	20N60B2 20N60B2D1 IC110 8-06B 405B2 SP20N60B2D1 SP20N60 20N60B2
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	PDF	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Siemens DIODE E 1220 Abstract: 30N60B2D1 30N60B ixst30n60b2d1 Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110 Siemens DIODE E 1220 30N60B2D1 30N60B ixst30n60b2d1