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Catalog Datasheet	MFG & Type	PDF	Document Tags
WED8L24257V Abstract: DSP5630X Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V	Original	PDF	WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X
WED8L24513V Abstract: No abstract text available Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V	Original	PDF	WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL
60MHZ Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization	Original	PDF	EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE
WED8L24513V Abstract: 2106XL Text: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs	Original	PDF	WED8L24513V 512Kx24 512Kx24 14mmx22mm MO-163) WED8L24513VxxBC 512Kx8 2106XL WED8L24513V
AN1007 Abstract: DSP56652 GSI cross GS71024 GS73024 DSP56300 DSP56600 DSP56690 ADSP-2100 ADSP2106 Text: AN1007 APPLICATION NOTE Pushing Your DSP to the Limit with GSI Technology SRAMs A broad range of digital signal processor applications in the telecommunications infrastructure feature large signal-processing tasks and require the very highest computational performance. New server	Original	PDF	AN1007 2000MIPS AN1007 DSP56652 GSI cross GS71024 GS73024 DSP56300 DSP56600 DSP56690 ADSP-2100 ADSP2106
7 k 3456 Abstract: WED8L24513V Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V	Original	PDF	WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL 7 k 3456
AS 15 -g Abstract: WED8L24257V Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V	Original	PDF	WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL AS 15 -g
Untitled Abstract: No abstract text available Text: White Electronic Designs WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static Random Access Memory Array The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer	Original	PDF	512Kx24 512Kx24 MO-163) 14mmx22mm WED8L24513V WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106XL
60MHZ Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Conﬁgurable Organization	Original	PDF	EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE