210N30PBT1 Search Results

210N30PBT1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarTM High Speed IXGK 210N30PBT1 IGBT + PolarTM MOSFET in Parallel VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous	Original	PDF	210N30PBT1 O-264 IXGK210N30PBT1

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Advance Technical Information PolarTM High Speed IXGK 210N30PBT1 IGBT + PolarTM MOSFET in Parallel VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous

Original

PDF

210N30PBT1 O-264 IXGK210N30PBT1