EMC21L1004GN
Abstract: EUDYNA 26841 2110 - 2170mhz power module
Text: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability
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EMC21L1004GN
22dBm
2170MHz
EMC21L1004GN
EUDYNA
26841
2110 - 2170mhz power module
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QPP-301
Abstract: No abstract text available
Text: QPP-301 120W, 2110-2170MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-301 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The
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QPP-301
2110-2170MHz
QPP-301
H10537)
H10894)
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QPP-302
Abstract: No abstract text available
Text: QPP-302 120W, 2110-2170MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-302 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-302
2110-2170MHz
QPP-302
H10537)
H10894)
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XEMOD
Abstract: 2090-2190MHz QPP-305 H1182
Text: QPP-305 10W, 2110-2170MHz Driver Amplifier Preliminary QuikPAC Module Data General description: Features: The QPP-305 QuikPAC RF power module is a two stage Class AB amplifier designed for use as a driver in linear RF power amplifiers. The power transistors are fabricated using Xemod’s
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QPP-305
2110-2170MHz
QPP-305
H11822)
XEMOD
2090-2190MHz
H1182
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transistor 13002
Abstract: 13002 power transistor transistor 13002 TO 05 QPP-303 Class A power amplifiers transistor w 13002
Text: QPP-303 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-303 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power
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QPP-303
2110-2170MHz
QPP-303
H10890)
transistor 13002
13002 power transistor
transistor 13002 TO 05
Class A power amplifiers
transistor w 13002
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5W amplifier tone
Abstract: QPP-304
Text: QPP-304 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-304 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-304
2110-2170MHz
QPP-304
H10890)
5W amplifier tone
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QPP-310
Abstract: ldmos 3g xemod
Text: QPP-310 180W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-310 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of RF power amplifiers in 3G CDMA base stations. The power
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QPP-310
2110-2170MHz
QPP-310
H10537)
H10894)
ldmos 3g
xemod
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QPP-310
Abstract: QPP-311
Text: QPP-311 180W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-311 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of RF power amplifiers in 3G CDMA base stations. The power
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QPP-311
2110-2170MHz
QPP-311
H10537)
H10894)
QPP-310
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XD010-35S
Abstract: H1182
Text: PRELIMINARY QuikPAC Module Data XD010-35S 10W, 2110-2170MHz CDMA Driver Amplifier General description: Features: The XD010-35S QuikPAC 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers for cellular base stations. The power transistors are
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XD010-35S
2110-2170MHz
XD010-35S
H11822)
H12048)
H1182
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QPP-308
Abstract: No abstract text available
Text: QPP-308 60W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-308 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-308
2110-2170MHz
QPP-308
H11860)
H11861)
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transistor 10mhz 60w
Abstract: transistor 38W 12.5W bypass transistor QPP-307
Text: QPP-307 60W; 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-307 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations.
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QPP-307
2110-2170MHz
QPP-307
H11860)
H11861)
transistor 10mhz 60w
transistor 38W
12.5W bypass transistor
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T0311QZ1950
Abstract: No abstract text available
Text: RFDpj06/012 Sep.15,2006 To: Qualcomm Inc. PRELIMINARY SPECIFICATIONS OF TRANSMITTER MODULE P/N : T0311QZ1950 D/N : RFDpj06/012 CUSTOMER’S APPROVAL CUSTOMER : . APPROVED BY : . DATE : . NOTES : . The above products are designed, developed and manufactured as contemplated for general use,
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RFDpj06/012
T0311QZ1950
RFDpj06/012
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SP10T
Abstract: GSM400 DCS 1800 RX SAW Filter MEMS RF switch CAPACITORS 2110 - 2170mhz power module RFMD LTE Band 40
Text: RF1293 SWITCH FILTER MODULE WITH FIVE LINEAR 3G/4G PATHS Package Style: 21-pin, 3.2 mm x 3.5 mm x 1.0 mm RF1293 GSM DCS/ PCS Rx Features GSM 900 Rx Excellent insertion loss and isolation performance Five linear paths offer band
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RF1293
21-pin,
900MHz)
DS110906
SP10T
GSM400
DCS 1800 RX SAW Filter
MEMS RF switch CAPACITORS
2110 - 2170mhz power module
RFMD LTE Band 40
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Resistor mttf
Abstract: AP512 AP512-PCB JESD22-A114 UMTS-band power module POWER MODULE TM 39 wj model marking code
Text: AP512 The Communications Edge TM UMTS-band 8W HBT Amplifier Module Product Features • 2110 – 2170 MHz • 28.5 dB Gain • -55 dBc ACLR @ 28 dBm W-CDMA linear power • +39 dBm P1dB • +12 V Single Supply • Power Down Mode • Bias Current Adjustable
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AP512
AP512
JESD22-A114
JESD22-C101
1-800-WJ1-4401
Resistor mttf
AP512-PCB
JESD22-A114
UMTS-band power module
POWER MODULE TM 39
wj model marking code
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CXM3558ER
Abstract: SP10T 6040MHz IC TX-2 SONY INDUCTOR SP10T switch VQFN-26P-01 2110 - 2170mhz power module cxm* sony
Text: SP10T Antenna Switch Module 4TRx/2Tx/4Rx for GSM and UMTS/CDMA Multi Mode Handset CXM3558ER Description The CXM3558ER is a SP10T antenna switch module for GSM and UMTS/CDMA multi-mode handset. The CXM3558ER has a built-in dual low pass filter and a +1.8V CMOS compatible decoder.
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SP10T
CXM3558ER
CXM3558ER
SP10T)
1648-1830MHz
3420Pin
VQFN-26P
6040MHz
IC TX-2
SONY INDUCTOR
SP10T switch
VQFN-26P-01
2110 - 2170mhz power module
cxm* sony
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P0632103H
Abstract: trimmer electron
Text: Preliminary 02.05.28 P0632103H 2.1 GHz band ♦ Features • • • • 2.1 GHz frequency band Typical 33 dBm output power Low power consumption 5.5 W typ. Excellent IM3 =-70 dBc@Pout=10 dBm S.C.L. • • • • Typical 22 dB power gain Low gain deviation
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P0632103H
P0632103H
KP008J
trimmer electron
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TX1824
Abstract: No abstract text available
Text: RF8888 Preliminary SP10T ANTENNA SWITCH MODULE TRIBAND GSM, PENTABAND UMTS Package Style: Laminate, 3.0mmx3.8mmx0.85mm RF8888 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: 1dB IL: 2.17GHz GSM TRx 1.05dB IL: 1.91GHz GSM Tx HB 25dB Isolation: Between all TRx
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RF8888
SP10T
17GHz
91GHz
17GHz
DS100922
TX1824
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Coexistence of GSM, WCDMA and LTE
Abstract: MICRO TX1 HDR2X3 RF8888 LTE filter band 13 tx-2 2200 26PIN SP10T GSM1800 GSM900
Text: RF8888 Preliminary SP10T ANTENNA SWITCH MODULE TRIBAND GSM, PENTABAND UMTS Package Style: Laminate, 3.0mmx3.8mmx0.85mm RF8888 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: 1dB IL: 2.17GHz GSM TRx 1.05dB IL: 1.91GHz GSM Tx HB
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RF8888
SP10T
17GHz
91GHz
17GHz
DS100922
Coexistence of GSM, WCDMA and LTE
MICRO TX1
HDR2X3
RF8888
LTE filter band 13
tx-2
2200 26PIN
GSM1800
GSM900
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MAT-21-1038
Abstract: No abstract text available
Text: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2810MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2810MHz VCC1 Features Mode Pin to Switch the Attenuation Slope NC MODE VCC2 VREF2 VCC3 28 2 Voltage Variable Attenuator 24 RFOUT
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RFVA0016
RFVA0016Analog
400MHz
2810MHz
32-Pin,
-60dBc
MAT-21-1038
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Untitled
Abstract: No abstract text available
Text: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2810MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2810MHz VCC1 Features Mode Pin to Switch the Attenuation Slope NC MODE VCC2 VREF2 VCC3 28 2 Voltage Variable Attenuator 24 RFOUT
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RFVA0016
RFVA0016Analog
400MHz
2810MHz
32-Pin,
-60dBc
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CXM3641ER-T2
Abstract: No abstract text available
Text: SP7T+SP7T Diversity Antenna Switch with MIPI Interface CXM3641ER Description The CXM3641ER is a SP7T+SP7T middle power switch with an integrated MIPI controller for wireless communication system. The Sony GaAs Junction gate pHEMT JPHEMT MMIC process is used for low insertion loss
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CXM3641ER
CXM3641ER
900MHz
VQFN-24P
100pF)
CXM3641ER-T2
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ACX Multilayer Chip
Abstract: BF2520 ACX filter Bandpass Filter GHz
Text: ACX Advanced Ceramic X BF 2520 Series Multilayer Chip Band-Pass Filters Features Ultra small SMD type with low loss at passband and high attenuation at stop-band. Applications 2.4GHz WLAN, Home RF, Bluetooth Modules, etc. Specifications Freq. Range MHz
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BF2520K2R4CAE_
915MHz
1990MHz
2170MHz
2700MHz
5000MHz
7500MHz
ACX Multilayer Chip
BF2520
ACX filter
Bandpass Filter GHz
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Untitled
Abstract: No abstract text available
Text: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2700MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2700MHz VCC1 Features Frequency Range 400MHz to 2700MHz Mode Pin to Switch the Attenuation Slope Gain = 25dB Typical
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RFVA0016
RFVA0016Analog
400MHz
2700MHz
-60dBc
10dBm
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LQP03TN10NH02D
Abstract: rfmd 3807 LQG15HN27NJ02D
Text: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2700MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2700MHz VCC1 Features Frequency Range 400MHz to 2700MHz Mode Pin to Switch the Attenuation Slope Gain = 25dB Typical
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RFVA0016Analog
400MHz
2700MHz
RFVA0016
32-Pin,
2700MHz
-60dBc
LQP03TN10NH02D
rfmd 3807
LQG15HN27NJ02D
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