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    211D Search Results

    211D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK1211DNS-00#J5 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK1211DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    U90A1211D0A Amphenol Communications Solutions ExpressPort QSFP+, High Speed Input Output Connectors, CAGE ASSEMBLY. Visit Amphenol Communications Solutions
    130-3162-11D Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 6 Column, Daughtercard Module, Nickel Sulfamate. Visit Amphenol Communications Solutions
    130-5262-11D Amphenol Communications Solutions Paladin 5-Pair, 6 Column, Right Angle Receptacle, Signal Module, NiS Visit Amphenol Communications Solutions
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    211D Price and Stock

    Texas Instruments LM211DR

    IC COMPARATOR 1 GEN PUR 8SOIC
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    DigiKey LM211DR Reel 7,500 2,500
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    Newark LM211DR Cut Tape 1,383 5
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    Bristol Electronics LM211DR 3,509
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    LM211DR 1,846
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    LM211DR 531 9
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    LM211DR 239
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    LM211DR 120
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    Ameya Holding Limited LM211DR 7,500
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    ComSIT USA LM211DR 5,660
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    Chip 1 Exchange LM211DR 5,981
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    Chip-Germany GmbH LM211DR 143
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    Chip1Stop LM211DR Cut Tape 811
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    Component Electronics, Inc LM211DR 77
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    New Advantage Corporation LM211DR 3,491 1
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    Win Source Electronics LM211DR 51,000
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    Texas Instruments LP5912-1.1DRVR

    IC REG LINEAR 1.1V 500MA 6WSON
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    DigiKey LP5912-1.1DRVR Cut Tape 6,948 1
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    LP5912-1.1DRVR Digi-Reel 6,948 1
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    LP5912-1.1DRVR Reel 3,000 3,000
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    Susumu Co Ltd RR1220P-1211-D-M

    RES SMD 1.21KOHM 0.5% 1/10W 0805
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    DigiKey RR1220P-1211-D-M Cut Tape 6,760 1
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    RR1220P-1211-D-M Digi-Reel 6,760 1
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    RR1220P-1211-D-M Reel 5,000 5,000
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    Chip1Stop RR1220P-1211-D-M Cut Tape 2,450
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    onsemi NCV2211DR2G

    IC AMP CLASS AB MONO 1W 8SOIC
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    DigiKey NCV2211DR2G Digi-Reel 4,846 1
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    NCV2211DR2G Cut Tape 4,846 1
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    Rochester Electronics NCV2211DR2G 875 1
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    Avnet Silica NCV2211DR2G 15 Weeks 2,500
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    EBV Elektronik NCV2211DR2G 16 Weeks 2,500
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    Wuhan P&S NCV2211DR2G 55 1
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    Texas Instruments TLV71211DSER

    IC REG LINEAR 1.1V 300MA 6WSON
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    DigiKey TLV71211DSER Cut Tape 2,819 1
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    TLV71211DSER Digi-Reel 2,819 1
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    Rochester Electronics TLV71211DSER 642,950 1
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    211D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2-1-1D Bourns Transformers 6PIN DIP RF WIDEBAND Original PDF
    211-D Keystone Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - BATTERY SPRING CONTACT, "C, D", .040" DIA MUSIC WIRE Scan PDF
    211D Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2-1-1DL Bourns Balun, RF/IF and RFID, MAGNETICS RF TRANSFORMER THT Original PDF

    211D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    211D

    Abstract: No abstract text available
    Text: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor


    Original
    PDF MIL-PRF-39006/22 11-Mar-11 211D

    211D

    Abstract: No abstract text available
    Text: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor


    Original
    PDF MIL-PRF-39006/22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 211D

    211D

    Abstract: No abstract text available
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original
    PDF Mil-PRF-39006/22 18-Jul-08 211D

    Untitled

    Abstract: No abstract text available
    Text: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor


    Original
    PDF MIL-PRF-39006/22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    ic 2114

    Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor


    Original
    PDF E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 10knductor ic 2114 ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115

    Untitled

    Abstract: No abstract text available
    Text: 20W Desktop For I.T.E. ETDA-211DAxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC, C-Tick


    Original
    PDF ETDA-211DAxx 24VDC ETDA-211DA05 ETDA-211DA06 ETDA-211DA07 ETDA-211DA09 ETDA-211DA10 ETDA-211DA15 ETDA-211DA16 ETDA-211DA18

    ic 2113

    Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


    Original
    PDF E/211F/211H/211L/211M/211N/211T/211V/211Z UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 ic 2113 UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118

    UNR2111

    Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor


    Original
    PDF E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2111 UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119

    211D

    Abstract: TFS211D
    Text: TFS 211D.doc version 1.2 VI TELEFILTER 10.12.2003 Prelimenary Specification TFS 211D 1/5 Measurement condition Ambient temperature TA: Input power level: Terminating impedances at fc *: 23 °C 0 dBm input: 740 Ω // -7,7 pF prelimenary value output: 280 Ω // -8,8 pF (prelimenary value)


    Original
    PDF TFS211D Pfeiffer30 211D

    ETDA21

    Abstract: No abstract text available
    Text: 20W Desktop For I.T.E. ETDA-211DNxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC


    Original
    PDF ETDA-211DNxx 24VDC ETDA-211DN05 ETDA-211DN06 ETDA-211DN07 ETDA-211DN09 ETDA-211DN10 ETDA-211DN15 ETDA-211DN16 ETDA-211DN18 ETDA21

    211D

    Abstract: No abstract text available
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original
    PDF Mil-PRF-39006/22 08-Apr-05 211D

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size (mm) Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings(Ta=25℃)


    Original
    PDF SML-211 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT

    211D

    Abstract: No abstract text available
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original
    PDF Mil-PRF-39006/22 11-Mar-11 211D

    SML211UT

    Abstract: SML-211 SML-211DT SML-211UT SML-211YT T-86
    Text: 0805<2.0 1.25 t=0.8mm> Low Current Type IF 10mA SML-211 Series Yellow Emitting Color Orange Red AlGaInP on GaAs Material Package Size(mm) 2012(0805) 2.0x1.25(t=0.8) Part No. SML-211YT SML-211WT SML-211DT Absolute Maximum Ratings (Ta=25∞C) (mW) Yellow Orange


    Original
    PDF SML-211 SML-211YT SML-211WT SML-211DT SML-211UT SML211UT SML-211DT SML-211UT SML-211YT T-86

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original
    PDF MIL-PRF-19500/211D MIL-PRF-19500/211C 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177,

    Untitled

    Abstract: No abstract text available
    Text: SML-211DT Data Sheet SML-21 Series 2012(0805) 2.0x1.25mm(t=0.8mm) Features ・Abundant color variations with diverse luminous intensity types Color Type V U D Y W M P Specifications Part No. • SML-212VT SML-210VT SML-212U2T A ■ SML-211UT


    Original
    PDF SML-211DT SML-21 SML-212VT SML-210VT SML-212U2T SML-211UT SML-212DT SML-210DT SML-212WT

    Mini-Mold

    Abstract: No abstract text available
    Text: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size (mm) Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings(Ta=25℃)


    Original
    PDF IF10mA) SML211 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT Mini-Mold

    211D

    Abstract: 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original
    PDF Mil-PRF-39006/22 18-Jul-08 211D 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan
    PDF TIM7179-4 MW50970196 TIM7179-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan
    PDF TIM5964-8SL TIM5964-8SL MW50750196

    si2127

    Abstract: No abstract text available
    Text: TIM5359-8L FEATURES : • L O W IN T E R M O D U L A T I O N D I S T O R T I O N I M 3 = —4 5 dBc at Po = 2 8 dBm . Single Carrier Level • H IG H • H IG H G A IN G ^ B = 8. 5 d B at 5. 3 G H z to 5. 9 G Hz - B R O A D B A N D IN T E R N A L L Y M A T C H E D


    OCR Scan
    PDF TIM5359-8L TIM5359-- si2127

    Untitled

    Abstract: No abstract text available
    Text: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE


    OCR Scan
    PDF TIM3742-8SL 2-11D1B)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan
    PDF TIM5964-8A 2-11D1B) at260

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan
    PDF TIM7179-7L MW50980196