emerson rosemount
Abstract: DPCO 05ATEX2130X PA66 - GF 25 relay
Text: Product Data Sheet February 2015 00813-0100-4030, Rev GE Rosemount 2120 Full-featured Vibrating Fork Liquid Level Switch Designed for operation in process temperatures of –40 to 302 °F –40 to 150 °C Adjustable switching delay for turbulent or
|
Original
|
|
PDF
|
2050s
Abstract: 2530S 2u transistor 1630S 1040-s 1040S
Text: M3.2U - Schaltung mit Sicherungen M3.2U - Circuit with fuses Luftselbstkühlung T A = 45°C Natural air cooling T A = 45°C Click on Outline No. for download Typenbezeichnung Part No. ZweigSicherung arm-fuse M3.2U 230/135 - 880S - K0.65S-6D428N-RCS M3.2U 230/135 - 1040S - K0.65S-6D798N-RCS
|
Original
|
65S-6D428N-RCS
1040S
65S-6D798N-RCS
1360S
36S-6D428N-RCS
1670S
36S-6D798N-RCS
2120S
05F-6D798N-RCS
2400S
2050s
2530S
2u transistor
1630S
1040-s
|
PDF
|
R5S72643
Abstract: SH7264 R5S72645 R5S72625 R5S72645P144FPU bosch edc 17 bosch edc 16 schematic diagram mac audio mpx 4000 SH72624 R5S72621P144FPU
Text: The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7262 Group, SH7264 Group User's Manual: Hardware
|
Original
|
SH7262
SH7264
32-Bit
SH7260
R5S72620
R5S72621
R5S72622
R5S72623
R5S72624
R5S72643
R5S72645
R5S72625
R5S72645P144FPU
bosch edc 17
bosch edc 16
schematic diagram mac audio mpx 4000
SH72624
R5S72621P144FPU
|
PDF
|
M383L2828BT1
Abstract: 1638B
Text: M383L2828BT1 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity with FET Revision 0.2 Nov. 2000 - -1 - Rev. 0.2 Nov. 2000 M383L2828BT1 184pin Registered DDR SDRAM MODULE
|
Original
|
M383L2828BT1
184pin
128Mx72
64Mx72)
64Mx4
72-bit
M383L2828BT1
1638B
|
PDF
|
n channel MOSFET 45 w 10 v
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
MRF21125S
MRF21125SR3
MRF21125
n channel MOSFET 45 w 10 v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21125R3
MRF21125SR3
|
PDF
|
j686
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21125
MRF21125S
j686
|
PDF
|
j686
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
dB110
MRF21125
MRF21125S
MRF21125SR3
j686
|
PDF
|
MRF21125
Abstract: 465B MRF21125S
Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
|
Original
|
MRF21125/D
MRF21125
MRF21125S
MRF21125
465B
MRF21125S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
|
Original
|
MRF21125/D
MRF21125
MRF21125S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
|
Original
|
MRF21125/D
MRF21125
MRF21125S
|
PDF
|
transistor motorola 236
Abstract: 465B MRF21125 MRF21125S MRF21125SR3 j686
Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
MRF21125/D
MRF21125
MRF21125S
MRF21125SR3
MRF21125
MRF21125S
transistor motorola 236
465B
MRF21125SR3
j686
|
PDF
|
100B104JCA50X
Abstract: 465B MRF21125 MRF21125R3 MRF21125SR3 j686
Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21125
MRF21125R3
MRF21125SR3
MRF21125R3
100B104JCA50X
465B
MRF21125
MRF21125SR3
j686
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110
|
Original
|
MRF21125/D
MRF21125R3
MRF21125SR3
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21125 Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21125
MRF21125R3
MRF21125SR3
|
PDF
|
MRF21085
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21085
MRF21085S
|
PDF
|
J176 equivalent
Abstract: MRF21085S MRF21085
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
MRF21085
MRF21085S
MRF21085SR3
MRF21085LS
MRF21085LSR3
J176 equivalent
|
PDF
|
465B
Abstract: AN1955 MRF21125 MRF21125R3 MRF21125SR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs
|
Original
|
MRF21125/D
MRF21125R3
MRF21125SR3
MRF21125R3
465B
AN1955
MRF21125
MRF21125SR3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21125
MRF21125R3
MRF21125SR3
MRF21125R3
|
PDF
|
j686
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
|
Original
|
MRF21125/D
MRF21125
MRF21125S
j686
|
PDF
|
MRF21125R3
Abstract: MRF21125SR3 465B MRF21125
Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110
|
Original
|
MRF21125
MRF21125R3
MRF21125SR3
MRF21125R3
MRF21125SR3
465B
MRF21125
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
|
Original
|
MRF21085R3
MRF21085LSR3
|
PDF
|
wb4 marking
Abstract: J152 mosfet transistor 2110 transistor
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
|
Original
|
MRF21180R6
wb4 marking
J152 mosfet transistor
2110 transistor
|
PDF
|
MOTOROLA J210
Abstract: MRF21085
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
MRF21085
MRF21085R3
MRF21085SR3
MRF21085LSR3
MOTOROLA J210
|
PDF
|