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    2149 STATIC RAM Search Results

    2149 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    2149 STATIC RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2148 ram

    Abstract: nmos static ram 2149 static ram
    Text: Am2148/2149 1024 x 4 Static RAM High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interface levels • • Low power dissipation - Am2148: 990 mW active, 165 mW power down


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    Am2148/2149 Am2148) Am2148: Am21L48 Am2148 Am2149 2148 ram nmos static ram 2149 static ram PDF

    Static ram 2149

    Abstract: 2149 STATIC RAM
    Text: MOS LSI TMS 2149 JL, NL, FPL FAST 1024-W0RD BY 4-BIT STATIC RAM J A N U A R Y 1982 - R E V IS E D M A Y 1 98 2 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization TOP VIEW Q U l8 3 V CC A2 Q 2 17 A8 16 A4 AlC 3


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    1024-W0RD 18-PIN VZ777S///y// Static ram 2149 2149 STATIC RAM PDF

    IC 2148

    Abstract: 21L49 CY2149 2148 static ram 21l48
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance


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    CY2148/CY21L48 CY2149/CY21L49 2148--55D CY2148 CY2149 38-00024-B IC 2148 21L49 2148 static ram 21l48 PDF

    AM2149

    Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
    Text: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


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    Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149 IG 03210 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55 PDF

    AM2149

    Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
    Text: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


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    Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am2148 Am2149 1024x4. AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55 PDF

    lt 7216

    Abstract: No abstract text available
    Text: 7 /8 " Diameter 10-Turn W i rewound Precision Potentiometer/ Position Sensor FEATURES I 7216, 7221 Bushing Mount, Sleeve Bearing 7223 Servo Mount, Ball Bearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3% Minimum Practical Resistance Tolerance


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    10-Turn lt 7216 PDF

    2148 static ram

    Abstract: No abstract text available
    Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads


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    Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 OP000730 OP000741 OP001081 OP000771 2148 static ram PDF

    LT 7223

    Abstract: lt 7216
    Text: MODEL SERIES 7 2 0 0 7 /8 " Diameter 10-Turn W irewound Precision Potentiometer/ Position Sensor I 721 6,7 2 2 1 pushing M ount, Sleeve Rearing 7223 Servo M ount, pall Rearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3%


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    10-Turn LT 7223 lt 7216 PDF

    2149H-3

    Abstract: 2148H
    Text: 2149H 1024 x 4-BIT STATIC RAM 2149H 2149HL 55 70 70 25 30 30 150 150 125 2149H-1 2149H-2 2149H-3 Max. Address Access Time ns 35 45 Max. Chip Select Access Time (ns) 20 20 Max. Active Current (mA) 150 150 Improved Performance Margins Common Data Input and Output


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    2149H 2149H-1 2149H-2 2149H-3 2149HL Time--20 2148H 4096-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),


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    CY7C18S CY7C185 300-mil-wide 28-Lead CY7C185â 28-Lead 300-Mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power


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    CY7C164A CY7C166A 7C166A) CY7C164A CY7C166A 7C166A PDF

    0148-t

    Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
    Text: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)


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    7C148) 25-ns 0GQb411 CY7C148 CY7C149 CY7C149-45KMB CY7C149â 45LMB 0148-t CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350 PDF

    2149f

    Abstract: Hitachi DSA002742 FZTAT64V3
    Text: Hitachi Single-Chip Microcomputer H8S/2149F-ZTAT H8S/2149 HD64F2149 Hardware Manual ADE-602-190 Rev. 1.0 7/05/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    H8S/2149F-ZTATTM H8S/2149 HD64F2149 ADE-602-190 TFP-100B TFP-100B) 2149f Hitachi DSA002742 FZTAT64V3 PDF

    A-18

    Abstract: MPC555 QADC64 272-Pin
    Text: LIST OF TABLES Table 2-1 2-2 2-3 2-4 2-5 2-6 Title Page MPC555 Pin Functions for 272-Pin PBGA . 2-3 Pin Functionality Table . 2-6


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    MPC555 272-Pin MPC555 A-18 QADC64 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI L SIs M 5 M 4 4 2 6 8 B P , J,L-7,-8,-10 STATIC COLUMN MODE 1 0 4 8 5 7 6 -B IT 2 6 2 1 4 4 -W 0 R D BY 4-BIT DYNAM IC RAM D E SC R IPT IO N T h is is a fa m ily o f 2 6 2 1 4 4 -w o r d by 4 -b it d y n a m ic R A M s , PIN C O N F IG U R A T IO N (TOP VIEW )


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    M5M44268BP, 44268BP, PDF

    EXR793

    Abstract: lpc574 chn 530 d10 860 HI12E C947 Hitachi DSA00276 FA419
    Text: Hitachi 16-Bit Single-Chip Microcomputer H8S/2169F-ZTAT H8S/2149F-ZTAT™ H8S/2169 HD64F2169 H8S/2149 HD64F2149 Hardware Manual ADE-602-190A Rev. 2.0 02/21/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s


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    16-Bit H8S/2169F-ZTATTM H8S/2149F-ZTATTM H8S/2169 HD64F2169 H8S/2149 HD64F2149 ADE-602-190A TFP-144 TFP-144) EXR793 lpc574 chn 530 d10 860 HI12E C947 Hitachi DSA00276 FA419 PDF

    FE3D..H

    Abstract: HD64F2149 HD64F2169 TFP-144 64f2169yvte10 Hitachi DSA0083 CHN 845
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    TFP-144) TFP-144 H8S/2169F-ZTATTM H8S/2149F-ZTATTM FE3D..H HD64F2149 HD64F2169 TFP-144 64f2169yvte10 Hitachi DSA0083 CHN 845 PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C 1001A is a CM OS, fully decoded dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M B81C 1001A has been designed fo r mainfram e


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    MB81C1001A-60/-70/-80/-10 MB81C1001A DIP-18P-M04 MB81C1A-80 MB81C1001A-10 24-LEAD FPT-24P-M04) F24020S-2C MB81C1001A-60 PDF

    SED1526F0A

    Abstract: DOT MATRIX 2088 epson sed1526fea SED1520 SED1526 SED1526D0A SED1526D0B SED1526FAA SED1526FEA SED1528F0A
    Text: PF776-03 SED1526/28 Series SED1526/28 Series Dot Matrix LCD Controller Driver SSC5000Series ● Ultra Low Power Consumption ● Built-in Power Supply Circuit for LCD ● 97 Driver Outputs • DESCRIPTION The SED1526 series is a single-chip LCD driver for dot-matrix liquid crystal displays LCD’s . It accepts serial or


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    PF776-03 SED1526/28 SSC5000Series SED1526 80-pixel 64-uire SED1526F0A DOT MATRIX 2088 epson sed1526fea SED1520 SED1526D0A SED1526D0B SED1526FAA SED1526FEA SED1528F0A PDF

    at28c64b i.c

    Abstract: AT28C64B-25DM 5962-87514 pin diagram AT28C64B AT28C64B-15DC at28c64b-20DM AT28C64B25DM883 AT28C64B-25D 074L AT28C64B-20DI
    Text: AT28C64B Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms maximum 1 to 64 Byte Page Write Operation


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    AT28C64B AT28C64B DM/883 DM/883 0007T4fl at28c64b i.c AT28C64B-25DM 5962-87514 pin diagram AT28C64B AT28C64B-15DC at28c64b-20DM AT28C64B25DM883 AT28C64B-25D 074L AT28C64B-20DI PDF

    A1125A

    Abstract: No abstract text available
    Text: a Advanced 674219 Devices FIFO RAM Controller Ordering Information Features/B enefits • High-speed, no tall-through time Part Number • Deep FIFO*— 16-bit SRAM address • Arbitration read/write • Full, Halt-Full, Empty, Almost flags lor buffer sizes from 512 to 64 K


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    16-bit A1125A PDF

    NEC 78000

    Abstract: ICC78000 A78000 78P014 S-750 0xBF is the op-code for a 78000 BRK instruction which generates a software iar inline assembly code IAR WE PRINTF CODE EXAMPLES
    Text: IAR C COMPILER FOR THE 78000 GUIDE DISCLAIMER The information in this document is subject to change without notice. While the information contained herein is assumed to be accurate, IAR Systems assumes no responsibility for any errors or omissions. COPYRIGHT NOTICE


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    PDF

    5962-88525

    Abstract: No abstract text available
    Text: AT28C256 Features • • Fast Read Access T im e-150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes internal Control Timer • Fast Write Cycle Times Page Write Cycle Time: 3.0 ms or 10 ms maximum 1 to 64 Byte Page Write Operation


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    AT28C256 e-150 AT28C256 5962-88525 PDF

    Untitled

    Abstract: No abstract text available
    Text: AT28C256 Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3.0 ms or 10 ms maximum


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    AT28C256 256ed PDF