2148 ram
Abstract: nmos static ram 2149 static ram
Text: Am2148/2149 1024 x 4 Static RAM High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interface levels • • Low power dissipation - Am2148: 990 mW active, 165 mW power down
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Am2148/2149
Am2148)
Am2148:
Am21L48
Am2148
Am2149
2148 ram
nmos static ram
2149 static ram
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Static ram 2149
Abstract: 2149 STATIC RAM
Text: MOS LSI TMS 2149 JL, NL, FPL FAST 1024-W0RD BY 4-BIT STATIC RAM J A N U A R Y 1982 - R E V IS E D M A Y 1 98 2 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization TOP VIEW Q U l8 3 V CC A2 Q 2 17 A8 16 A4 AlC 3
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1024-W0RD
18-PIN
VZ777S///y//
Static ram 2149
2149 STATIC RAM
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IC 2148
Abstract: 21L49 CY2149 2148 static ram 21l48
Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance
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CY2148/CY21L48
CY2149/CY21L49
2148--55D
CY2148
CY2149
38-00024-B
IC 2148
21L49
2148 static ram
21l48
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AM2149
Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
Text: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels
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Am2148/Am2149
L48/Am21
1024x4
Am2148)
Am2148:
Am21L48
Am2148
Am2149
IG 03210
AM2148-35
AM2149-35
AM21L48-45
AM21L48-55
AM21L48-70
AM21L49-45
AM21L49-55
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AM2149
Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
Text: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels
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Am2148/Am2149
L48/Am21
1024x4
Am2148)
Am2148:
Am2148
Am2149
1024x4.
AM2149-35
AM21L48-45
AM21L48-55
AM21L49-45
AM21L49-55
nmos static ram
AM21L48-70
AM2148-55
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lt 7216
Abstract: No abstract text available
Text: 7 /8 " Diameter 10-Turn W i rewound Precision Potentiometer/ Position Sensor FEATURES I 7216, 7221 Bushing Mount, Sleeve Bearing 7223 Servo Mount, Ball Bearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3% Minimum Practical Resistance Tolerance
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10-Turn
lt 7216
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2148 static ram
Abstract: No abstract text available
Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads
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Am2148/Am2149
L48/Am21
1024x4
Am2148)
Am2148:
Am21L48
OP000730
OP000741
OP001081
OP000771
2148 static ram
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LT 7223
Abstract: lt 7216
Text: MODEL SERIES 7 2 0 0 7 /8 " Diameter 10-Turn W irewound Precision Potentiometer/ Position Sensor I 721 6,7 2 2 1 pushing M ount, Sleeve Rearing 7223 Servo M ount, pall Rearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3%
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10-Turn
LT 7223
lt 7216
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2149H-3
Abstract: 2148H
Text: 2149H 1024 x 4-BIT STATIC RAM 2149H 2149HL 55 70 70 25 30 30 150 150 125 2149H-1 2149H-2 2149H-3 Max. Address Access Time ns 35 45 Max. Chip Select Access Time (ns) 20 20 Max. Active Current (mA) 150 150 Improved Performance Margins Common Data Input and Output
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2149H
2149H-1
2149H-2
2149H-3
2149HL
Time--20
2148H
4096-bit
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Untitled
Abstract: No abstract text available
Text: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),
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CY7C18S
CY7C185
300-mil-wide
28-Lead
CY7C185â
28-Lead
300-Mil)
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Untitled
Abstract: No abstract text available
Text: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power
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CY7C164A
CY7C166A
7C166A)
CY7C164A
CY7C166A
7C166A
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0148-t
Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
Text: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)
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7C148)
25-ns
0GQb411
CY7C148
CY7C149
CY7C149-45KMB
CY7C149â
45LMB
0148-t
CY7C149
CY7C148-25DC
up c1482
0148t
L5045
CY7C148-35PC
CY7C148-35DC
MU 350
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2149f
Abstract: Hitachi DSA002742 FZTAT64V3
Text: Hitachi Single-Chip Microcomputer H8S/2149F-ZTAT H8S/2149 HD64F2149 Hardware Manual ADE-602-190 Rev. 1.0 7/05/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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H8S/2149F-ZTATTM
H8S/2149
HD64F2149
ADE-602-190
TFP-100B
TFP-100B)
2149f
Hitachi DSA002742
FZTAT64V3
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A-18
Abstract: MPC555 QADC64 272-Pin
Text: LIST OF TABLES Table 2-1 2-2 2-3 2-4 2-5 2-6 Title Page MPC555 Pin Functions for 272-Pin PBGA . 2-3 Pin Functionality Table . 2-6
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MPC555
272-Pin
MPC555
A-18
QADC64
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI L SIs M 5 M 4 4 2 6 8 B P , J,L-7,-8,-10 STATIC COLUMN MODE 1 0 4 8 5 7 6 -B IT 2 6 2 1 4 4 -W 0 R D BY 4-BIT DYNAM IC RAM D E SC R IPT IO N T h is is a fa m ily o f 2 6 2 1 4 4 -w o r d by 4 -b it d y n a m ic R A M s , PIN C O N F IG U R A T IO N (TOP VIEW )
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M5M44268BP,
44268BP,
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EXR793
Abstract: lpc574 chn 530 d10 860 HI12E C947 Hitachi DSA00276 FA419
Text: Hitachi 16-Bit Single-Chip Microcomputer H8S/2169F-ZTAT H8S/2149F-ZTAT™ H8S/2169 HD64F2169 H8S/2149 HD64F2149 Hardware Manual ADE-602-190A Rev. 2.0 02/21/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s
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16-Bit
H8S/2169F-ZTATTM
H8S/2149F-ZTATTM
H8S/2169
HD64F2169
H8S/2149
HD64F2149
ADE-602-190A
TFP-144
TFP-144)
EXR793
lpc574
chn 530
d10 860
HI12E
C947
Hitachi DSA00276
FA419
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FE3D..H
Abstract: HD64F2149 HD64F2169 TFP-144 64f2169yvte10 Hitachi DSA0083 CHN 845
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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TFP-144)
TFP-144
H8S/2169F-ZTATTM
H8S/2149F-ZTATTM
FE3D..H
HD64F2149
HD64F2169
TFP-144
64f2169yvte10
Hitachi DSA0083
CHN 845
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Untitled
Abstract: No abstract text available
Text: November 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C 1001A is a CM OS, fully decoded dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M B81C 1001A has been designed fo r mainfram e
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MB81C1001A-60/-70/-80/-10
MB81C1001A
DIP-18P-M04
MB81C1A-80
MB81C1001A-10
24-LEAD
FPT-24P-M04)
F24020S-2C
MB81C1001A-60
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SED1526F0A
Abstract: DOT MATRIX 2088 epson sed1526fea SED1520 SED1526 SED1526D0A SED1526D0B SED1526FAA SED1526FEA SED1528F0A
Text: PF776-03 SED1526/28 Series SED1526/28 Series Dot Matrix LCD Controller Driver SSC5000Series ● Ultra Low Power Consumption ● Built-in Power Supply Circuit for LCD ● 97 Driver Outputs • DESCRIPTION The SED1526 series is a single-chip LCD driver for dot-matrix liquid crystal displays LCD’s . It accepts serial or
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PF776-03
SED1526/28
SSC5000Series
SED1526
80-pixel
64-uire
SED1526F0A
DOT MATRIX 2088
epson sed1526fea
SED1520
SED1526D0A
SED1526D0B
SED1526FAA
SED1526FEA
SED1528F0A
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at28c64b i.c
Abstract: AT28C64B-25DM 5962-87514 pin diagram AT28C64B AT28C64B-15DC at28c64b-20DM AT28C64B25DM883 AT28C64B-25D 074L AT28C64B-20DI
Text: AT28C64B Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms maximum 1 to 64 Byte Page Write Operation
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AT28C64B
AT28C64B
DM/883
DM/883
0007T4fl
at28c64b i.c
AT28C64B-25DM
5962-87514
pin diagram AT28C64B
AT28C64B-15DC
at28c64b-20DM
AT28C64B25DM883
AT28C64B-25D
074L
AT28C64B-20DI
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PDF
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A1125A
Abstract: No abstract text available
Text: a Advanced 674219 Devices FIFO RAM Controller Ordering Information Features/B enefits • High-speed, no tall-through time Part Number • Deep FIFO*— 16-bit SRAM address • Arbitration read/write • Full, Halt-Full, Empty, Almost flags lor buffer sizes from 512 to 64 K
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16-bit
A1125A
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NEC 78000
Abstract: ICC78000 A78000 78P014 S-750 0xBF is the op-code for a 78000 BRK instruction which generates a software iar inline assembly code IAR WE PRINTF CODE EXAMPLES
Text: IAR C COMPILER FOR THE 78000 GUIDE DISCLAIMER The information in this document is subject to change without notice. While the information contained herein is assumed to be accurate, IAR Systems assumes no responsibility for any errors or omissions. COPYRIGHT NOTICE
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5962-88525
Abstract: No abstract text available
Text: AT28C256 Features • • Fast Read Access T im e-150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes internal Control Timer • Fast Write Cycle Times Page Write Cycle Time: 3.0 ms or 10 ms maximum 1 to 64 Byte Page Write Operation
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AT28C256
e-150
AT28C256
5962-88525
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PDF
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Untitled
Abstract: No abstract text available
Text: AT28C256 Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3.0 ms or 10 ms maximum
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AT28C256
256ed
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