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    SPD21N05

    Abstract: 21n05l P-TO251-3-1 P-TO252 Q67040-S4131-A2 SPD21N05L SPU21N05L 30e20
    Text: SPD 21N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated


    Original     		PDF 21N05L SPD21N05L P-TO252 Q67040-S4137 SPU21N05L P-TO251-3-1 Q67040-S4131-A2 SPD21N05 21n05l P-TO252 SPD21N05L SPU21N05L 30e20

    21n05l

    Abstract: P-TO251-3-1 21N05
    Text: SPD 21N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated


    Original     		PDF 21N05L SPD21N05L SPU21N05L P-TO252 Q67040-S4137-A2 P-TO251-3-1 Q67040-S4131-A2 SPD21N05L 21n05l 21N05

    Untitled

    Abstract: No abstract text available
    Text: , • - SPD 21N05L I n f ine o n technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancem ent mode Drain source voltage ^DS Drain-Source on-state resistance f í DS onl Continuous drain current • Avalanche rated b


    OCR Scan     		PDF 21N05L P-T0252 Q67040-S4137 SPU21N05L P-T0251-3-1 Q67040-S4131-A2 SPD21N05L S35bG5 Q133777 SQT-89