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    22 NF, 63 Search Results

    22 NF, 63 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    R4F20222NFD#U0 Renesas Electronics Corporation Microcontrollers with Ease-of-Use and Reduced CPU Processing Load Features (Non Promotion) Visit Renesas Electronics Corporation
    SF Impression Pixel

    22 NF, 63 Price and Stock

    Panasonic Electronic Components ERJ-6ENF2263V

    Thick Film Resistors - SMD 0805 226Kohms 1% AEC-Q200
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    Mouser Electronics ERJ-6ENF2263V 50,129
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    Panasonic Electronic Components ERJ-8ENF2263V

    Thick Film Resistors - SMD 1206 226Kohms 1% AEC-Q200
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    Mouser Electronics ERJ-8ENF2263V 27,471
    • 1 $0.12
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    Panasonic Electronic Components ERJ-1GNF2263C

    Thick Film Resistors - SMD 0201 226Kohm 1% HalogenFree AEC-Q200
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    Mouser Electronics ERJ-1GNF2263C 20,338
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    Silicon Laboratories Inc BGM210LA22JNF2

    Bluetooth Modules - 802.15.1 BGM210L Wireless Gecko Bluetooth Lighting Module, PCB, +12 dBm, 2.4 GHz, 1 MB Flash, -40 to 105 C, Built-in Antenna
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    Mouser Electronics BGM210LA22JNF2 398
    • 1 $8.7
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    onsemi NFVA22512NP2T

    Intelligent Power Modules - IPMs 1200V/25A ASPM34
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    Mouser Electronics NFVA22512NP2T 86
    • 1 $80.81
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    Find more 22 NF, 63 price and stock on Findchips.com

    22 NF, 63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LCR polypropylene Capacitors

    Abstract: LCR Capacitors 2000v mkc 55 PRECISION cAPACITORS polystyrene capacitors LCR polypropylene Capacitors dc 55-085-56 630V FSC 160V
    Text: Precision Capacitors LCR TYPE FPC FSC FSC/EX FPC/EX MKC/R MKC/PC RATED DC VOLTAGE AC 160 - 630 VDC 30 - 630 VDC 63 - 630 VDC 63 - 630 VDC 63 - 400 VDC 63 - 400 VDC CAPACITANCE RANGE 1 - 150 nF 25 pF - 200 nF 47 pF - 100 nF 47 pF - 100 nF 0.01 - 22 µF 0.01 - 22 µF


    Original     		PDF 100nf 105MegOhm LCR polypropylene Capacitors LCR Capacitors 2000v mkc 55 PRECISION cAPACITORS polystyrene capacitors LCR polypropylene Capacitors dc 55-085-56 630V FSC 160V

    DMNF2-63FIB-C

    Abstract: No abstract text available
    Text: ELECTRICAL SOLUTIONS A. System Overview Part Number System for Pan-Term Metric Disconnects DM NF Type N DM = Disconnect Metric 1 Wire Range Insulation = Nylon NF = Nylon Funnel V — = Vinyl = Non-Insulated leave blank 285 FIB 1 = 0.5 – 1.0mm2 (22 – 18 AWG)


    Original     		PDF DMNF1-285FIB-C DMNF1-288FIB-C DMNF1-488FIB-C DMNF1-63FIB-C DMNF2-488FIB-C DMNF2-63FIB-C DMNF6-63FI-L

    microswitch

    Abstract: E1422 W097125 MC 1.5 c640-10 60944 63130 FG79 22X58 FG78
    Text: Gears & Fuse Gears Gears & Fuse Gears IEC General Purpose Fuses Ferrule Fuses SI Bases for 14x51, 22x58 SI 22 SI 14 SI with microswitch For Ferrules-type fuses Ø 14 - 22 • • • • SHOCK-PROOF MODULAR ASSEMBLY COMPLIANT WITH IEC 60269-1 AND NF C 63130


    Original     		PDF 14x51, 22x58 H096055 R097213 T096065 microswitch E1422 W097125 MC 1.5 c640-10 60944 63130 FG79 22X58 FG78

    HSG1001

    Abstract: IC str 1229
    Text: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz


    Original     		PDF HSG1001 REJ03G0195-0100Z HSG1001 IC str 1229

    Untitled

    Abstract: No abstract text available
    Text: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz


    Original     		PDF HSG1001 REJ03G0195-0100Z

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - VNA-22 Amplifier print this page VNA-22 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz NF dB Typ. IP3 dBm Typ. 500-2500 11.80 +17.00 +10.00 6.70 Lw=low range fL to fU/2 U=upper range(fU/2 to fU)


    Original     		PDF VNA-22

    940-025

    Abstract: No abstract text available
    Text: Sav-Con connector savers Series 22 Geo-Marine connectors 940-025 Scoop-Proof High-Pressure Connector How To Order Sample Part Number 940 Series No. 940 Basic No. -025 Finish Symbol B, J, M, N, NF, T, Z1 See Table I Shell Size 10, 12, 14, 16, 18, 20, 22, 24


    Original     		PDF

    NE38018 V68

    Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
    Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz


    Original     		PDF NE38018 NE38018-T1 NE38018-T2 NE38018 V68 transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792

    2SC5507

    Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 NE661M04-T2 24-Hour 2SC5507 NE661M04-T2 S21E 842 ic 2912

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF IS21EI2 OT-343 NE661M04 NE661M04

    60Ghz

    Abstract: FMM5716X ED-4701
    Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for


    Original     		PDF FMM5716X 60GHz FMM5716X 1906B, ED-4701

    az 2732 132

    Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022

    Untitled

    Abstract: No abstract text available
    Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for


    Original     		PDF FMM5716X 60GHz FMM5716X 1906B,

    ua 722 fc

    Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022

    vg 96912 16-8

    Abstract: 941L vg 96912
    Text: Sav-Con Connector Savers Sav-Con® Connector Savers LN 29729 SJT 94 1 L 001 NF 28 G 22 P X Series No. Class 1 = Environmental 2 = Hi Rel L = Lock Ring (Optional) - = Standard Basic Part No. Finish Symbol (See Page 6) Alternate Position W, X, Y, Z (Omit for Normal)


    Original     		PDF C93-422 HE306) vg 96912 16-8 941L vg 96912

    SAV-CON

    Abstract: vg 96912 A 2039 g vg 96912 16-8
    Text: Sav-Con Connector Savers LN 29729 SJT Sav-Con® Connector Savers 94 1 L 008 NF 28 G 22 P X Series No. Class 1 = Environmental 2 = Hi Rel L = Lock Ring (Optional) - = Standard Basic Part No. Finish Symbol (See Page G-6) Alternate Position W, X, Y, Z (Omit for Normal)


    Original     		PDF C93-422 HE306) SAV-CON vg 96912 A 2039 g vg 96912 16-8

    TSE 151

    Abstract: BB502C SC-82AB Hitachi DSA00310
    Text: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B Z 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz


    Original     		PDF BB502C ADE-208-810B 200pF, OT-343mod) BB502C TSE 151 SC-82AB Hitachi DSA00310

    Untitled

    Abstract: No abstract text available
    Text: N. BNC. TNC SERIES 2 WATTS 22 If 8 _L N MALE BNC MALE N FEMALE TNC MALE < A . - . CFT-2 NF MECHANICAL SPECIFICATIONS Connector Contact Housing Insulator aa ELECTRICAL SPECIFICATIONS Brass, Nickel Plated. Brass, Gold Plated. Brass, Nickel Plated.


    OCR Scan     		PDF 60GHz

    21134 015

    Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		PDF NE38018 NE38018-T1 NE38018-T2 21134 015 nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051

    CECC 22111

    Abstract: No abstract text available
    Text: Standards Approvals SUHNER SMA connectors conform to International: IEC 169-15 Europe: CECC22110 USA: MIL-C-39012, SMA Interface MIL-STD-348a/310 GB: BS 9210 N 0006 F: NF-C-93563 KMR SUHNER SMA connectors are approved in accor dance with CECC 22 11 0 and are mentioned ir


    OCR Scan     		PDF CECC22110 MIL-C-39012, MIL-STD-348a/310 NF-C-93563 CECC 22111

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Microwave Terminations 22 N. BNC. TNC SERIES 2 WATTS N MALE BNC MALE CFT-2 NM CFT-2 BM N FEMALE TNC MALE IN 0.60 0.65 0.75 0.80 1.35 1.50 1.60 MM 15.24 16.51 19.05 20.32 34.29 38.10 40.64 T B CFT-2 NF CFT-2 TM MECHANICAL SPECIFICATIONS Connector Contact


    OCR Scan     		PDF

    2200 microfarad electrolytic capacitor

    Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
    Text: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33


    OCR Scan     		PDF 220nF 1000pF 10jiF 2200 microfarad electrolytic capacitor capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor

    Untitled

    Abstract: No abstract text available
    Text: N. BNC. TNC SERIES 2 WATTS Microwave Terminations 22 N MALE BNC MALE T B CFT-2 NM CFT-2 BM N FEMALE TNC MALE IN MM 0.60 15.24 0.65 16.51 0.75 19.05 0.80 20.32 1.35 34.29 1.50 38.10 1.60 40.64 rn CFT-2 NF CFT-2 TM MECHANICAL SPECIFICATIONS Connector Contact


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		PDF NE38018 NE38018-T1 NE38018-T2 Rn/50