vitrohm 412
Abstract: 226 20K 340 MQ K1 226 20K 107 kp 357 vitrohm kh
Text: Prefered values acc. to DIN/IEC: E6 E 12 E 24 E6 E 12 E 24 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 1.2 1.5 1.5 1.8 2.2 2.2 2.7 3.9 4.7 4.7 5.6 6.8 6.8 8.2 E 48 E 96 E 192 E 48 E 96 E 192 E 48 E 96 E 192 E 48 E 96 E 192 E 48 E 96 E 192
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249ce
vitrohm 412
226 20K 340
MQ K1
226 20K 107
kp 357
vitrohm kh
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ic HM 392 - 110
Abstract: vitrohm 412 101 R15 N 470 KP
Text: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182
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2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
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2N6251
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SA1046
2N3055
BU108
transistor K 3596
BU326
BU100
TL MJE2955T
MJE3055T
2N3174
2SC936
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2SC124
Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS
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2N5191,
2N5192
2N5194
2N5195*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
2SC124
2n5195 motorola
BU108
bd238 equivalent
2SA1046
tip3055 equivalent
BU806 Complement
BU326
BU100
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MJ-12003
Abstract: TIP32C 329 BU108 BD679 2N6285 equivalent bd139 equivalent 2SA49 PRF 374 MOTOROLA ST BDX53C BD602
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP31A TIP31B* TIP31C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.2 Vdc (Max) @ IC = 3.0 Adc
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TIP31A,
TIP32A
TIP31B,
TIP32B
TIP31C,
TIP32C
TIP31A
TIP31B*
TIP31C*
MJ-12003
TIP32C 329
BU108
BD679
2N6285 equivalent
bd139 equivalent
2SA49
PRF 374 MOTOROLA
ST BDX53C
BD602
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BU108
Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —
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2N5303)
2N5301,
2N5302)
2N4398,
2N4399
2N5745
2N5301
2N5302
BU108
2SA1046
2SC7
BD129
mje13003 equivalent
BU323A equivalent
BU326
BU100
bd237 equivalent
TIP32C equivalent
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2SC105
Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2N4918,
2N4919,
2N4920
2N4921
2N4923*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
2SC105
2sd718 amplifier
2N4923 MOTOROLA
bd139 equivalent transistor
2SA1046
2SC1629 equivalent
bd139 Complement
ST BDW83C
2SC108
BU326A equivalent
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2N6124
Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2N4921,
2N4922,
2N4923
2N4918
2N4920*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
2N6124
334 bdw93c
2n4920R
BU108
2SA1046
2N4920
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
2SA981 equivalent
BU806 Complement
BDX54
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mje15033 replacement
Abstract: 2SD694 2SC1832 MJE340 D40K MJ12002 BDW59 2SC187 MJ3237 BD3851
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc Max @ IC = 3.0 Adc
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BD241B,
BD242B
BD241C,
BD242C
BD241B
BD241C*
BD242C*
TIP73B
TIP74
mje15033 replacement
2SD694
2SC1832
MJE340
D40K
MJ12002
BDW59
2SC187
MJ3237
BD3851
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226 20K
Abstract: HP3456A HP3458A 0411 02 027 000 9845 HP3456 Sn96Ag3
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . VISHAY THIN FILM LEAD FREE WRAPAROUND PROCESS Qualification Report # 28249 Vishay Thin Film Lead free wraparound process Models series: P ns, PTN, L ns, M Qualification Report # 28249 Eight lead-free wraparound termination lots consisting of
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VSD-TN0016-0411
226 20K
HP3456A
HP3458A
0411 02 027 000
9845
HP3456
Sn96Ag3
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BU108
Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS
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2N5194,
2N5195.
2N5191
2N5192*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BU108
2SA1046
driver amplifier tip31 TRANSISTOR
BDX54
MJE5190
2SB56
BU326
BU100
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CR1206
Abstract: 226 20K 107
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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475 50K 536
Abstract: E-96 Multiplier Code TR0603 226 25K 226 20K 340
Text: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments
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10ppm,
25ppm,
50ppm
475 50K 536
E-96 Multiplier Code
TR0603
226 25K
226 20K 340
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CR1206
Abstract: No abstract text available
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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TR1206
Abstract: 2m741
Text: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments
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10ppm,
25ppm,
50ppm
TR1206
2m741
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CR0603
Abstract: No abstract text available
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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CR0603
Abstract: No abstract text available
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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CR0603
Abstract: E-96 Multiplier Code
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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CR1206
Abstract: 475 50K 536
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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CR0805
Abstract: 0805J
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet November 2014 00813-0100-4004, Rev KA Rosemount 8800D Series Vortex Flowmeter HART and FOUNDATION fieldbus Protocols All welded, non-clog design provides maximum performance, reliability and enhanced safety by eliminating ports and gaskets. No seals, just steel.
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8800D
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SNR A 150K
Abstract: snr 130k 10 549K
Text: GLOSSARY/TABLES Data Conversion Values # BITS # COUNTS PPM THEORETICAL 10V LSB 5V LS6 2.5V LSB SNR DB 6 64 15,625 -36.1 156mV 78.1 mV 39.1mV 8 256 3,906 -48.2 39.1 mV 19.5mV 9.77mV 10 1024 977 -60.2 9.77mV 4.88mV 2.44mV 12 4096 244 -72.2 2.44mV 1.22mV 610|iV
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156mV
153jaV
SNR A 150K
snr 130k 10
549K
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475 50K 030
Abstract: CR0603 R010 R015 R020 R030 R040 R050 R065 E-96 Multiplier Code
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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R330
Abstract: IEC 62 code RESISTOR DPAC CR1206 R010 R015 R020 R030 R040 R050
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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