Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits TO-92 DIM. Blocking Voltage to 600 Volts
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R1U50-600A
O-226AA)
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R1U50-600A
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts
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R1U50-600A
O-226AA)
R1U50-600A
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97A8
Abstract: 08Amp
Text: LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors 97A8 TRIACs 0.8AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger
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O-226AA)
97A8
08Amp
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR T08M3F-A SERIES TRIACs 0.8 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA TO-92 (TO-226AA) FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes
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T08M3F-A
O-226AA)
Oct-2004,
KTXD03
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors S08-A SERIES SCRs 0.8 AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits TO-92 DIM. Blocking Voltage to 600 Volts
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S08-A
O-226AA)
007TJ
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR S08-A SERIES SCRs 0.8 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts
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S08-A
O-226AA)
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T1M5F600A
Abstract: T1M5F-600A T1M5F400A t1m5f t 04 80 t1m5f-600
Text: LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes
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O-226AA)
T1M5F600A
T1M5F-600A
T1M5F400A
t1m5f
t 04 80
t1m5f-600
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR T1M5F800A TRIACs 1.0 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA TO-92 FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 800 Volts Sensitive Gate Triggering in Four Trigger Modes
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T1M5F800A
O-226AA)
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t1m5f
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR T1M5F800A and AR TRIACs 1.0 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-92 TO-226AA (TO-226AA) FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 800 Volts Sensitive Gate Triggering in Four Trigger Modes
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T1M5F800A
O-226AA)
t1m5f
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GS8550T
Abstract: No abstract text available
Text: GS8550T Small Signal Transistors PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) t c u rod P New Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output stages such as portable radios in class-B push-pull
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GS8550T
O-226AA
GS8050T
-800mA
-800mA,
-80mA
-10mA
-50mA
GS8550T
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bs250
Abstract: No abstract text available
Text: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway
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BS250
O-226AA
20K/box
20K/box
bs250
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Untitled
Abstract: No abstract text available
Text: MPSA56 Small Signal Transistor PNP t c u rod P New TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor
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MPSA56
O-226AA
MPSA06
OT-23
MMBTA56.
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Untitled
Abstract: No abstract text available
Text: 2N7000 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching
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2N7000
O-226AA
20K/box
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R1U50-600A
Abstract: 10US2
Text: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts
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R1U50-600A
O-226AA)
R1U50-600A
10US2
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Untitled
Abstract: No abstract text available
Text: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 • SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP
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O-226AA)
OT-23
SST201,
SST202
2N4338,
2N4339,
2N4340,
2N4341,
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nd2410l
Abstract: No abstract text available
Text: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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ND2406L,
ND2410L
O-226AA)
ND2406L
ND2410L
VDDV24
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Current Regulator Diodes
Abstract: NIP1CHP
Text: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 • SST108, SST109, SST110 Single TO-52 (TO-206AC) • 2N5432, 2N5433, 2N5434 Single Chip
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O-226AA)
OT-23
O-206AC)
SST108,
SST109,
SST110
2N5432,
2N5433,
2N5434
Current Regulator Diodes
NIP1CHP
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VN2410M
Abstract: VN2410L
Text: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237
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VN2410
O-226AA)
VN2410L
VN2410M
O-237
O-237
VNDB24
VN2410L
VN2410M
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Untitled
Abstract: No abstract text available
Text: TN1206L N-Channel Enhancement-Mode MOS Transistor m SSgA PRODUCT SUMMARY V BR DSS TO-92 (TO-226AA) •d “ST (A) 6 0.18 120 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: SeeVN D Q 12 I — ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN1206L
O-226AA)
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Untitled
Abstract: No abstract text available
Text: Hmzzàz TN0601L N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA 'V V (BR)DSS 60 1.8 BOTTOM VIEW •d (A) 0.47 1 SOURCE 2 GATE Performance Curves: VNDQ06 3 DRAIN 3 il— L-n • - É ? i ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN0601L
O-226AA)
VNDQ06
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tn2010l
Abstract: TN2010 TN201
Text: BW 5P& TN201 OL, TN241 OL N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BRJDSS PART NUMBER 'X ' •d (A) TN2010L 200 10 0.18 TN2410L 240 10 0.18 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN201
TN241
O-226AA)
TN2010L
TN2410L
VNDB24
TN2010
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Untitled
Abstract: No abstract text available
Text: VN2010L N-Channel Enhancement-Mode MOS Transistor JTtSgft PRODUCT SUMMARY V BR DSS (V) 200 Performance Curves: TO-92 (TO-226AA) T •d (A) 10 0.19 VNDQ20 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 .1— Ln ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN2010L
VNDQ20
O-226AA)
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Untitled
Abstract: No abstract text available
Text: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package
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SD1202
O-226AA
SD1202CHP
SD1202BD
OT-143)
tO921
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JR 3610
Abstract: RT 083 206af 44464
Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package
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----------------T-29-25
O-226AA
O-237
808CHP
VP08Q8L
VP1008CHP
VP1008L
VP1008M
-100\i
VP1008
JR 3610
RT 083
206af
44464
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