10ETS
Abstract: 10ETS08 10ETS12 AN-994
Text: 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS TO-220AC • Input rectification • Vishay Semiconductors switches and output rectifiers
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Original
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10ETS08PbF,
10ETS12PbF
2002/95/EC
O-220AC
10ETS.
11-Mar-11
10ETS
10ETS08
10ETS12
AN-994
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-UFB280FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C
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Original
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VS-UFB280FA20
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-UFH60GA60P www.vishay.com Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial
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Original
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VS-UFH60GA60P
OT-227
OT-227
E78996
60electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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Original
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VS-UFB130FA60
UFB120FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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WSLT4026
Abstract: No abstract text available
Text: WSLT4026 www.vishay.com Vishay Dale Power Metal Strip Resistors, High Temperature 275 °C , High Power, Low Value, Surface Mount, 4-Terminal FEATURES • 4-terminal design allows for 1 % tolerance Available down to 0.002 • High power-to-footprint size ratio
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Original
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WSLT4026
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
WSLT4026
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-UFB200CB40P www.vishay.com Vishay Semiconductors Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial
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Original
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VS-UFB200CB40P
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-HFA90FA120 HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal
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Original
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VS-HFA90FA120
HFA80FA120P
E78996
2002/95/EC
OT-227
HFA80FA120P)
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB230FA60 UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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Original
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VS-UFB230FA60
UFB200FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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Original
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HFA120FA120P
E78996
2002/95/EC
OT-227
HFA120FA120P)
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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Original
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UFL60FA60P
OT-227
OT-227
E78996
2002/95/EC
UFL60FA60P
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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Original
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HFA80FA120P
E78996
OT-227
2002/95/EC
HFA80FA120P)
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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VPR5Z
Abstract: No abstract text available
Text: VPR5Z, VPR7Z Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Technology Power Current Sensing Resistors with TCR of ± 0.05 ppm/°C and Power Rating up to 7 W FEATURES • Temperature coefficient of resistance TCR : ± 0.05 ppm/°C (0 °C to 60 °C)
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Original
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1K2345
27-Apr-2011
VPR5Z
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PDF
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GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
GA100NA60UP
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PDF
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|
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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GT100DA120U
OT-227
E78996
2002/95/EC
18-Jul-08
GT100DA120U
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA60FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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Original
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HFA60FA120P
E78996
OT-227
2002/95/EC
HFA60FA120P)
OT-227
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22hay
11-Mar-11
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PDF
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E78996 rectifier module
Abstract: No abstract text available
Text: UFL120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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Original
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UFL120FA60P
OT-227
OT-227
E78996
2002/95/EC
UFL120FA60P
18-Jul-08
E78996 rectifier module
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PDF
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UFB200FA
Abstract: No abstract text available
Text: UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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Original
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UFB200FA60P
OT-227
OT-227
E78996
2002/95/EC
UFB200FA60P
11-Mar-11
UFB200FA
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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PDF
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Untitled
Abstract: No abstract text available
Text: 145104-01-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: REV DESCRIPTION A THIRD ANGLE PROJ. B SMB RIGHT ANGLE CRIMP PLUG - P/N: 142194 CABLE RG-316 CABLE ECO 30-Sep-10 2104 RELEASE TO MFG. 22-Jul-10 SEE SHEET 1 27-Mar-14 SMB R/A CRIMP PLUG P.NO WAS 142193
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Original
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145104-01-XX
30-Sep-10
22-Jul-10
RG-316
27-Mar-14
RG-316/U
14-Mar-14
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. By - LOC DIST GP 00 REVISIONS LTR F1 120° 1 REF A A HMR SM 22JUL1 E C O - 1 1-01 1 461 APVD BLACK D THE RETENTION TABS PROVIDE A ONE-TIME INTEREERENCE FIT IN THE .078 DIAMETER BOARD HOLE FOR HEADER
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OCR Scan
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22JUL1
UL94V-0
24JUNE2005
CST-100
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PDF
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O-M03
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 5 6 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By - REVISIONS DIST GP 00 LTR F1 DESCRIPTION REVISED PER DATE DWN HMR SM 22JUL1 E C O - 1 1-01 1 461 APVD 1X MATERIAL: HEADER - POLYESTER UL94V-0 BLACK
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OCR Scan
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22JUL1
UL94V-0
25JUNE2005
CST-100
O-M03
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PDF
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