TRANSISTOR p50
Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the
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eSHP170COB
eSHP170COB
eSHP170
eSHP170
AP-eSH-0005
TRANSISTOR p50
p13 transistor
P41 transistor
transistor p13
P40 transistor
p21 transistor
transistor P32 25
p23 transistor
transistor p31
transistor p11
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transistor 2N3906 datasheet
Abstract: 2n3906 equivalent transistor "PNP Transistor" dip 2.54mm Header 3 Pin 2.54mm Header 8 Pin 10m resistor ecap Resistor 10K data sheet transistor 2n3906 2n3906
Text: BOM for Combo Keyboard Rev 02, Feb 18 2000 Description Qty Value CAP 4 100n CAP 2 22p ECAP 1 1u ECAP 2 4u7 Resistor 1 10M Resistor 3 10K Resistor 2 27 ohm Resistor 3 330 ohm Supply Ferrite 2 0.5 AXIAL LED 3 GREEN PNP TRANSISTOR 1 2N3906 MC68HC908JB8 1 QFP44
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2N3906
MC68HC908JB8
QFP44
R9-11
transistor 2N3906 datasheet
2n3906 equivalent transistor
"PNP Transistor"
dip 2.54mm Header 3 Pin
2.54mm Header 8 Pin
10m resistor
ecap
Resistor 10K
data sheet transistor 2n3906
2n3906
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SW-DIP-2
Abstract: UPA75V SW-DIP2 balanced microphone schematic SW-DIP-4 SW-DIP4 4570 upa75 c603 transistor microphone Preamp schematic
Text: 1 THAT Corporation Design Note 109 Microphone pre-amp using a THAT 120 transistor array The high-quality microphone preamp shown in the accompanying schematic uses a THAT120 with two transistors paralleled on each half of the differential input. Q1A and Q1B is a general purpose matched pair configured as current sources, which bias
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THAT120
R12-16
1N960A
1N960A
1N4004
1N4148
UPA75V
10k00
SW-DIP-2
UPA75V
SW-DIP2
balanced microphone schematic
SW-DIP-4
SW-DIP4
4570
upa75
c603 transistor
microphone Preamp schematic
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DMP2215L
Abstract: DMP2215L-7 22p marking DMP2215 marking 27A sot23
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage
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DMP2215L
OT-23
J-STD-020C
MIL-STD-202,
DS31125
DMP2215L
DMP2215L-7
22p marking
DMP2215
marking 27A sot23
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22p transistor
Abstract: No abstract text available
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A
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DMP2215L
OT-23
OT-23
J-STD-020C
MIL-STD-202,
DS31125
22p transistor
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Untitled
Abstract: No abstract text available
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage
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DMP2215L
AEC-Q101
OT-23
J-STD-020C
DS31125
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Untitled
Abstract: No abstract text available
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage
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DMP2215L
AEC-Q101
OT-23
J-STD-020C
DS31125
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transistor 22p
Abstract: SOT23 22p
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A
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DMP2215L
AEC-Q101
OT-23
OT-23
J-STD-020D
DS31125
transistor 22p
SOT23 22p
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u1 7805
Abstract: 7805 TO-3 7812 TO-3 ic 7805 working AN232-05 IC 7805 P9012134.zip 16F628 datasheet ic 7805 IC U4 7805
Text: K150. USB PIC PROGRAMMER This documentation was written October 9, 2003. This is the third in a series of three PIC Programmers designed by Tony Nixon. Most of the components – resistors, some capacitors, transistors and two ICs – are surface mount and are presoldered on the board. There are
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com/jpg/k150
16F628
FT232BM
20-Aug-2003
\PROGRAM\SCHEMS\K150
u1 7805
7805 TO-3
7812 TO-3
ic 7805 working
AN232-05
IC 7805
P9012134.zip
16F628
datasheet ic 7805
IC U4 7805
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ind0603
Abstract: ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8
Text: Application Note 78 ML2722 & ML2751 Evaluation Design OVERVIEW FEATURES The ML2722/ML2751 evaluation design demonstrates the performance, simplicity and size of a transceiver for two application areas. First is a Direct Sequence Spread Spectrum DSSS at 1.536M chips per second and a
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ML2722
ML2751
ML2722/ML2751
ML2722
ML2751
928MHzoration.
AN78-01
ind0603
ROHM MCR03 EZP
22p capacitor
murata grm39 capacitor
Z5U .02M
WIMA2220
220n capacitor datasheet
22p trimmer capacitor
821 ceramic capacitor
NRS106K16R8
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Untitled
Abstract: No abstract text available
Text: 2SD471 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD471
Freq130M
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Untitled
Abstract: No abstract text available
Text: 2SB1207Q Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SB1207Q
Freq90M
req90M
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Untitled
Abstract: No abstract text available
Text: 2N619 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)8.0m
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2N619
Freq200k
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Untitled
Abstract: No abstract text available
Text: 2SA1419T Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m
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2SA1419T
Freq120M
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23/DMP2215L-7
Abstract: No abstract text available
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100m @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215m @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance
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DMP2215L
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31125
23/DMP2215L-7
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J-STD-020D
Abstract: DMP2215L DMP2215L-7
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A
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DMP2215L
AEC-Q101
OT-23
J-STD-020D
DS31125
J-STD-020D
DMP2215L
DMP2215L-7
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DMP2215L
Abstract: DMP2215 DMP2215L-7 22p marking
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A
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DMP2215L
AEC-Q101
OT-23
OT-23
J-STD-020D
DS31125
621-DMP2215L-7
DMP2215L-7
DMP2215L
DMP2215
DMP2215L-7
22p marking
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Untitled
Abstract: No abstract text available
Text: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Mechanical Data Low On-Resistance: • RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A • RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage
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DMP2215L
AEC-Q101
OT-23
J-STD-020
DS31125
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transistor 22p
Abstract: schematic diagram dac emfesh
Text: eSH Series Application Notes EMFeSHxB 1. EMFeSHXA Flash Module Schematic Diagram: The EMFeSH’s Flash memory only support 3V power support. Connect +3VDC power to this connector OSCO/P5.3 Shared Port Jumper. Connect when pins are shared. Otherwise, pins are independent.
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AP-eSH-0004
transistor 22p
schematic diagram dac
emfesh
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2931a
Abstract: 2931A datasheet TLC2262 tesoro r4 4.7k iC5A 4024 c1470n r5110k ic8b
Text: RX Coil R27 5.1k R28 100k IC7a R29 100k C16 120p R3 20k C9 100p IC7b R19 82k C10 130p DISC 100k R1 1.2k R2 12k +V R23 100k C1 470n C2 47n All transistors common small-signal type, i.e., 2N3904 & 2N3906 C15 33nF R26 5.1k TX Coil R64 10k R69 27k C17 220nF R30
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2N3904
2N3906
220nF
IC10a
TLC2262
LM393
MC33178
2931a
2931A datasheet
TLC2262
tesoro
r4 4.7k
iC5A
4024
c1470n
r5110k
ic8b
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BUW22AP
Abstract: BUW22P BUW22 BUW22A
Text: 7^537 QQSaaCH T • H^-33-Z-l SGS-THOMSON BUW22/22P [¡«^ »[iCTtMntgS_BUW22A/22AP G S-THOMSON 30E » HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BUW22, BUW22A are silicon multiepitaxial me sa PNP transistor in Jedec TO-3 metal case, particulary intended for switching applications.
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jmS37
BUW22/22P
BUW22A/22AP
BUW22,
BUW22A
BUW22P,
BUW22AP
O-220
BUW22/P
BUW22A/AP
BUW22P
BUW22
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BUW22AP
Abstract: BUW22P
Text: r Z 7 S G S -T H O M S O N BUW22/22P BUW22A/22AP HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUW22, BUW22A are silicon multiepitaxial me sa PNP transistor in Jedec TO-3 metal case, particulary intended for switching applications. The BUW22P, BUW22AP are mounted in T0-220
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BUW22/22P
BUW22A/22AP
BUW22,
BUW22A
BUW22P,
BUW22AP
T0-220
BUW22/P
MJW21A/F
BUW22P
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Untitled
Abstract: No abstract text available
Text: MIC5800/5801 L 4/8-Bit Parallel-Input Latched Drivers General Description Features The MIC5800/5801 latched drivers are high-voltage, highcurrent integrated circuits comprised of four or eight CMOS data latches, a bipolar Darlington transistor driver for each
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MIC5800/5801
IC5800
MIC5801
MIC5800/5801_
33Rriaya:
1725-1C-12D
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Untitled
Abstract: No abstract text available
Text: General Description Features The MIC58P01 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the
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MIC58P01
500mA)
MIC5801,
MIC58P01
1725-1C-12D
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