SSM3K126
Abstract: No abstract text available
Text: SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU Target Specification High-Speed Switching Applications • • 4.0 V drive Low ON-resistance: Unit: mm Ron = 71 mΩ max (@VGS = 4.0 V) Ron = 38 mΩ (max) (@VGS = 10 V) 2.1±0.1
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SSM3K126TU
SSM3K126
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MT3S111TU
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05
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MT3S111TU
MT3S111TU
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Untitled
Abstract: No abstract text available
Text: SSM3J135TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J135TU ○ Power Management Switch Applications • • 1.5 V drive Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V)
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SSM3J135TU
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Untitled
Abstract: No abstract text available
Text: SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 140 mΩ max (@VGS = 1.5 V) Ron = 93 mΩ (max) (@VGS = 1.8 V) Ron = 63 mΩ (max) (@VGS = 2.5 V)
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SSM3K121TU
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SSM3J132TU
Abstract: ssm3j132
Text: SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J132TU ○ Power Management Switch Applications • • 1.2-V drive Low ON-resistance: RDS(ON) = 94 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (@VGS = -1.8 V)
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SSM3J132TU
SSM3J132TU
ssm3j132
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SSM3K124TU
Abstract: No abstract text available
Text: SSM3K124TU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K124TU ○ DC-DC コンバータ ○ 超高速スイッチング 単位: mm 2.1±0.1 • オン抵抗が低い : Ron = 120 mΩ max (@VGS = 4 V) 1.7±0.1 2.0±0.1 : Ron = 83 mΩ (max) (@VGS = 10 V)
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SSM3K124TU
SSM3K124TU
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2SA2215
Abstract: 2sa22 2sa221
Text: 2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)
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2SA2215
2SA2215
2sa22
2sa221
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2SA2214
Abstract: 2sa22 2SA221
Text: 2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 • Low collector-emitter saturation voltage: VCE sat = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.)
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2SA2214
2SA2214
2sa22
2SA221
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2SA2214
Abstract: No abstract text available
Text: 2SA2214 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2214 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm 2.1±0.1 コレクタ･エミッタ間飽和電圧が低い。: VCE sat = −0.14 V (最大)
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2SA2214
645mm2
2SA2214
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2SC6135
Abstract: No abstract text available
Text: 2SC6135 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6135 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm 2.1±0.1 コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)
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2SC6135
2SC6135
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SSM3K105TU
Abstract: No abstract text available
Text: SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm Ron = 480mΩ max (@VGS = 3.3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.1±0.1 Drain-Source voltage Rating
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SSM3K105TU
SSM3K105TU
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ssm3k126
Abstract: No abstract text available
Text: SSM3K126TU 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K126TU ○ 高速スイッチング • 4.0 V 駆動です • オン抵抗が低い: Ron = 43mΩ max (@VGS = 4V) 単位: mm 2.1±0.1 Ron = 32mΩ (max) (@VGS = 10V) 号
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SSM3K126TU
ssm3k126
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SSM3K102TU
Abstract: No abstract text available
Text: SSM3K102TU 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K102TU ○ パワーマネジメントスイッチ ○ 高速スイッチング 2.1±0.1 1.8V 駆動です オン抵抗が低い : Ron = 154mΩ max (@VGS = 1.8V) : Ron = 99mΩ (max) (@VGS = 2.5V)
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SSM3K102TU
645mm2
645mm
SSM3K102TU
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SSM3K106TU
Abstract: No abstract text available
Text: SSM3K106TU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K106TU ○ DC-DC コンバータ ○ 超高速スイッチング 単位: mm 2.1±0.1 • 4V 駆動です • オン抵抗が低い : Ron = 530 mΩ max (@VGS = 4 V) 絶対最大定格 (Ta = 25°C)
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SSM3K106TU
JEDE600
645mm2
SSM3K106TU
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SSM3K107TU
Abstract: No abstract text available
Text: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage
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SSM3K107TU
SSM3K107TU
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2SC6133
Abstract: No abstract text available
Text: 2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 High-speed switching: tf = 45 ns typ. +0.1 0.3 -0.05 • 1 3 2 0.166±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.15A)
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2SC6133
2SC6133
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SSM3J111TU
Abstract: No abstract text available
Text: SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.1±0.1 • Lead Pb -free Ron = 480mΩ (max) (@VGS = −4 V) 1.7±0.1 2.0±0.1 Ron = 680mΩ (max) (@VGS = −2.5 V) Characteristic
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SSM3J111TU
SSM3J111TU
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SSM3K104TU
Abstract: 2A20
Text: SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications 2.1±0.1 Low ON-resistance: 1.7±0.1 Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)
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SSM3K104TU
SSM3K104TU
2A20
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2SC6135
Abstract: No abstract text available
Text: 2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.)
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2SC6135
2SC6135
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74SZ125
Abstract: quanta LTN150U2-L02 quanta computer sharp lq150x1lh82 QUANTA KT5 SAMSUNG C541 LTN141 N20122PS800-0805 LQ150X1LH82
Text: 5 4 3 2 1 MODEL Model 1A KT5 MB 2A D 3A FIRST RELEASE REFERENCE THE ECN E200203-324 REFERENCE THE ECN E200203-382 3C REFERENCE THE ECN E200204-185 3 Page PRELIMINARY RELEASE 3B 3D KT5 CHANGE LIST REV REFERENCE THE ECN E200204-457 REFERENCE THE ECN E200 C B
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E200203-324
E200203-382
E200204-185
E200204-457
31KT5MB0001
2N7002E
SI4404
1mR-7520PC13
20mil
74SZ125
quanta
LTN150U2-L02
quanta computer
sharp lq150x1lh82
QUANTA KT5
SAMSUNG C541
LTN141
N20122PS800-0805
LQ150X1LH82
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OZ9956
Abstract: SB700 RS780M RX781 cmc tpm 16 cmc tp16 ATI rs780 RX780 AZ1117H-ADJTRE1 oz99
Text: 4 3 AMD S1G2 PROCESSOR HT3 2600Mhz 5.2GT/s 16x16 RTL8111B PCIE ETHERNET 26 Express CARD PCIE I/F USB1 MINI-PCIE 28 X16 PEIE I/F HyperTransport LINK3 CPU I/F MXM Socket type III ATI M88 VGA CON PCIE I/F 1 X16 PCIE GFX I/F USB0 MINI-PCIE 28 D 200-PIN DDR2 SODIMM
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638-Pin
2600Mhz
16x16
800MT/S
200-PIN
CS9LPRS472
RTL8111B
RX780
OZ9956
SB700
RS780M
RX781
cmc tpm 16
cmc tp16
ATI rs780
RX780
AZ1117H-ADJTRE1
oz99
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SPIF3811
Abstract: PCI7412 Quanta at7 915GM foxconn BCM4401E EX C747 BT 342 project Socket AM2 quanta
Text: 5 4 3 2 1 ZB1 SYSTEM BLOCK DIAGRAM DVI / 7307 Chrontel Yonah/Merom 479 uFCPGA U44 X'TAL 14.318MHZ P41 Thermal Sensor P5 U64 P3,P4 PCI-Express X 2 Docking Connector CPU TV out / CRT Switch TV in with PCIE1~2 , Lan ,Ser & Par Port , D Clock Generator ICS954310BGLF
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318MHZ
ICS954310BGLF
MAX4892
2N7002
SPIF3811
945GM/PM
10/100/1G
IEEE1394.
PCI7412
Quanta at7
915GM
foxconn
BCM4401E
EX C747
BT 342 project
Socket AM2
quanta
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Untitled
Abstract: No abstract text available
Text: KSR2211 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in Mas Resistor (R-22U1) • Complement to KSR1211 ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic
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KSR2211
R-22U1)
KSR1211
-100mA,
-10mA,
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Untitled
Abstract: No abstract text available
Text: Tem ic U2763B S e m i c o n d u c t o r s 900-MHz ISM Band Transmitter Description The transmitter IC U2763B is specifically designed for cordless telephone applications in the 900-MHz ISM band. The IC is manufactured using TEMIC Semicon ductors’ advanced UHF process. It consists of a 900-MHz
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U2763B
900-MHz
U2763B
900-MHz
U2762B
AM79C432A
AM79C433.
D-74025
18-Feb-99
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