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    2300 TRANSISTOR REPLACEMENT TABLE FOR TRANSISTOR Search Results

    2300 TRANSISTOR REPLACEMENT TABLE FOR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2300 TRANSISTOR REPLACEMENT TABLE FOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF2425M7L100; BLF2425M7LS100 ACPR885k IS-95 IS-95 BLF2425M7L100 2425M7LS100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P

    smd transistor 2300

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 2 — 1 March 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300

    Untitled

    Abstract: No abstract text available
    Text: BLF2324M8LS200P Power LDMOS transistor Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF2324M8LS200P

    Untitled

    Abstract: No abstract text available
    Text: BLF8G24LS-200PN Power LDMOS transistor Rev. 1 — 20 January 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF8G24LS-200PN

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140

    smd transistor 2300

    Abstract: BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 3 — 20 April 2012 Preliminary data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLS7G2325L-105

    smd transistor 2300

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 5 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300

    BLS7G2325L-105

    Abstract: No abstract text available
    Text: BLS7G2325L-105 Power LDMOS transistor Rev. 1 — 1 March 2011 Objective data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance


    Original     		PDF BLS7G2325L-105 BLS7G2325L-105

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLS7G2325L-105 2002/95/EC,

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 ACPR885k IS-95 IS-95 BLF7G24L-100 7G24LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 ACPR885k IS-95 IS-95 BLF7G24L-140 7G24LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P

    Untitled

    Abstract: No abstract text available
    Text: BLC8G24LS-240AV Power LDMOS transistor Rev. 1 — 26 September 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLC8G24LS-240AV

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 01 — 14 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k IS-95 BLF7G24L-100 7G24LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 01 — 29 March 2010 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P BLF7G27LS-75P

    BLF7G24LS-160P

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 1 — 10 February 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P BLF7G24LS-160P