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7430 ic data sheet Abstract: MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445 Text: DISCRETE SEMICONDUCTORS DATA SHEET 2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor	Original	PDF	LV2327E40R SCA53 127147/00/02/pp8 7430 ic data sheet MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445
Y parameters of transistors Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .	Original	PDF	MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Untitled Abstract: No abstract text available Text: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide	OCR Scan	PDF	LV2327E40R bb53131 7Z88736 7Z88737
TRANSISTOR MARKING CODE NM Abstract: marking code m2 transistor LV2327E40R SC15 marking M2 NPN microwave transistor 03 2327E40R low voltage power transistor Text: Philips Semiconductors Product specification NPN microwave power transistor 2327E40R FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency class A circuit. • Diffused emitter ballasting resistors providing excellent current sharing	OCR Scan	PDF	LV2327E40R OT445B OT445B. TRANSISTOR MARKING CODE NM marking code m2 transistor LV2327E40R SC15 marking M2 NPN microwave transistor 03 2327E40R low voltage power transistor
2327E40R Abstract: T445B Text: Philips Semiconductors Product specification NPN microwave power transistor 2327E40R FEATURES QUICK REFERENCE DATA • interdigitated structure provides high emitter efficiency Microwave performance for Tcase = 25 °C in a wideband common-emitter class A circuit.	OCR Scan	PDF	T445B LV2327E40R 2327E40R
1721E50R Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking	OCR Scan	PDF	LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips