TRANSISTOR 3F t
Abstract: Hitachi DSA00280 Philips 2222 654 10109
Text: H8S/2368 Series TM H8S/2367 F-ZTAT HD64F2367 H8S/2365 HD6432365 H8S/2363 HD6412363 Hardware Manual ADE-602-261 Rev. 1.0 3/04/02 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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H8S/2368
H8S/2367
HD64F2367
H8S/2365
HD6432365
H8S/2363
HD6412363
ADE-602-261
TRANSISTOR 3F t
Hitachi DSA00280
Philips 2222 654 10109
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stk 2365
Abstract: PB4540 32 QAM qam circuit ANTPC ANTPC03 ANTPC01 Advanced Hardware Architectures 256 QAM 16QAM
Text: Advanced Hardware Architectures AHA <O LXX 3 <O L Quadrature Amplitutde Modulation QAM AHA 4501 / Ñ Òa;1@ $ A <R%- . X X % , % 2365 NE Hopkins Court Pullman,WA 99163-5601 tel:509.334.1000 fax:509.334.9000 e-mail: [email protected] www.aha.com ANTPC03_0601
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ANTPC03
AHA4540
AHA4501
stk 2365
PB4540
32 QAM
qam circuit
ANTPC
ANTPC01
Advanced Hardware Architectures
256 QAM
16QAM
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2365 ROM
Abstract: No abstract text available
Text: 1.2 Block Diagram Port 8 PB7/A15 PB6/A14 PB5/A13 PB4/A12 PB3/A11 PB2/A10 PB1/A9 PB0/A8 PC7/A7 PC6/A6 PC5/A5 PC4/A4 PC3/A3 PC2/A2 PC1/A1 PC0/A0 P35/SCK1/SCL0/ P34/SCK0/SCK4/SDA0 P33/RxD1/SCL1 P32/RxD0/IrRxD/SDA1 P31/TxD1 P30/TxD0/IrTxD WDT RAM SCI x 5 channels
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P35/SCK1/SCL0/(
P34/SCK0/SCK4/SDA0
P33/RxD1/SCL1
P32/RxD0/IrRxD/SDA1
P31/TxD1
P30/TxD0/IrTxD
P85/SCK3
P83/RxD3
P81/TxD3
PB7/A15
2365 ROM
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IC 93c46
Abstract: 93C46 IC chip 8-pin 93C66 93c66 6 93C46PC 93C66 chip 8-pin 93C46 93C66 93C46 f 93c66 93C46
Text: Turbo IC, Inc. 93C66/93C56/93C46 PRODUCT INTRODUCTION CMOS MICROWIRE BUS 4K/2K/1K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 512/256/128 X 8/16 BIT EEPROM FEATURES : • Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Industry Standard Microwire Bus
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93C66/93C56/93C46
93C66/93C56/93C46
TU93C66/93C56/93C46PC
IC 93c46
93C46 IC
chip 8-pin 93C66
93c66 6
93C46PC
93C66
chip 8-pin 93C46
93C66 93C46
f 93c66
93C46
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28C64AP
Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
Text: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28C64A
28C64AP
28C64A
28C64APC-2
hex55
ROM 8K x 8
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IC 24C04
Abstract: 24C04 wp c code for 24c04 eeprom 24c04 how to reset 24C04 24C04 write 24C04 turbo eeprom 24c04 Turbo IC i/of eeprom 24c04
Text: Turbo IC, Inc. 24C04 PRODUCT INTRODUCTION CMOS I²C 2-WIRE BUS 4K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 512 X 8 BIT EEPROM FEATURES : • Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Low Power (Isb = 2µa @ 5.5 V) • I²C Bus, 2-Wire Serial Interface
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24C04
24C04
51itions.
IC 24C04
24C04 wp
c code for 24c04
eeprom 24c04
how to reset 24C04
write 24C04
turbo eeprom 24c04
Turbo IC
i/of eeprom 24c04
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IC 24c08
Abstract: 24C08 MEMORY EEPROM 24C08 24C08 6 TU24C08BS3I
Text: Turbo IC, Inc. 24C08 CMOS I²C 2-WIRE BUS 8K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 1K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Low Power (Isb = 2µa @ 5.5 V) • I²C Bus, 2-Wire Serial Interface
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24C08
24C08
IC 24c08
MEMORY EEPROM 24C08
24C08 6
TU24C08BS3I
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24c16 wp
Abstract: IC 24c16 24C16 eeprom 24C16 5 pin 24C16 serial eeprom ic eeprom 24c16 eeprom 24C16 8 pin 24c16 EEPROM turbo C programming ic cmos 5011
Text: Turbo IC, Inc. 24C16 CMOS I²C 2-WIRE BUS 16K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 2K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Low Power (Isb = 2µa @ 5.5 V) • I²C Bus, 2-Wire Serial Interface
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24C16
24C16
24c16 wp
IC 24c16
eeprom 24C16 5 pin
24C16 serial eeprom
ic eeprom 24c16
eeprom 24C16 8 pin
24c16 EEPROM
turbo C programming
ic cmos 5011
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28LV64
Abstract: 28LV64PC-4 hex55 DSA009112
Text: Turbo IC, Inc. 28LV64 LOW VOLTAGE CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 200 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28LV64
28LV64
28LV64PC-4
hex55
DSA009112
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IC 24c08
Abstract: 24C08 MEMORY EEPROM 24C08 TU24C08CS3 24c08 an 24C08 6
Text: Turbo IC, Inc. 24C08 CMOS I²C 2-WIRE BUS 8K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 1K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Low Power (Isb = 2µa @ 5.5 V) • I²C Bus, 2-Wire Serial Interface
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24C08
24C08
IC 24c08
MEMORY EEPROM 24C08
TU24C08CS3
24c08 an
24C08 6
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28LV256PC-4
Abstract: No abstract text available
Text: Turbo IC, Inc. 28LV256 LOW VOLTAGE CMOS 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 32K X 8 BIT EEPROM FEATURES: • 200 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28LV256
10urbo
28LV256PC-4
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IC 24c08
Abstract: 24c08 24C08 datasheet MEMORY EEPROM 24C08 24C08 6 eeprom 24c08 IC 24c08 contain IC 24c08 data sheet rom 1K x 8 DMBT8599
Text: Turbo IC, Inc. 24C08 CMOS I²C 2-WIRE BUS 8K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 1K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Low Power (Isb = 2µa @ 5.5 V) • I²C Bus, 2-Wire Serial Interface
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24C08
24C08
IC 24c08
24C08 datasheet
MEMORY EEPROM 24C08
24C08 6
eeprom 24c08
IC 24c08 contain
IC 24c08 data sheet
rom 1K x 8
DMBT8599
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28C256APC-2
Abstract: hex55
Text: Turbo IC, Inc. 28C256A HIGH SPEED CMOS 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 32K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28C256A
28C256APC-2
hex55
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24c16 wp
Abstract: IC 24c16 eeprom 24C16 5 pin 24C16 serial eeprom 24C16 24c16 wp reset EEPROM 24C16 24c16 byte addressing 24c16 EEPROM 24c16 datasheet
Text: Turbo IC, Inc. 24C16 CMOS I²C 2-WIRE BUS 16K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 2K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7 V to 5.5 V • Low Power (Isb = 2µa @ 5.5 V) • I²C Bus, 2-Wire Serial Interface
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24C16
24C16
24c16 wp
IC 24c16
eeprom 24C16 5 pin
24C16 serial eeprom
24c16 wp reset
EEPROM 24C16
24c16 byte addressing
24c16 EEPROM
24c16 datasheet
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25C256
Abstract: 25C128 Turbo IC 25C256P
Text: Turbo IC, Inc. 25C128/25C256 PRELIMINARY INFORMATION CMOS SPI BUS 128K/256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 16K/32K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Single Vcc for Read and Programming Vcc = 2.7V to 3.6 V (Vcc = 4.5V to 5.5V)
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25C128/25C256
128K/256K
16K/32K
TU25C128/25C256PC-2
25C256
25C128
Turbo IC
25C256P
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M5L2732K
Abstract: mk36000
Text: MITSUBISHI LSIs M5M2365-XXXP 6 5 5 3 6 - B IT 81 92-W O R D B Y 8-B IT M ASK-PROGRAM M ABLE ROM DESCRIPTION The Mitsubishi M 5M 2365-XXXP is a 65536-bit mask pro grammable high speed read-only memory. The M 5M 2365-XXXP is fabricated by N-channel p o ly
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M5M2365-XXXP
2365-XXXP
65536-bit
24-pin
5L2716K
5L2732K
250ns
M5L2732K
mk36000
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2764 eprom PINOUT
Abstract: vti 2365 2564 eprom A12C VT2365-15 VT2365-20 VT2366-15 VT2366-20 "vlsi technology"
Text: VT 2365/66_ 8,192 x 8 STATIC READ ONLY MEMORY FEATURES DESCRIPTION • 8,192 x 8-bit organization TheVT2365/66 high-perform ance Read Only M em ory is organized 8,192 words by eight bits with an access tim e o f 150 ns. The ROM is c o m p a tib le
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28-Pin
VT2365
VT2366
VT2365/66
2764 eprom PINOUT
vti 2365
2564 eprom
A12C
VT2365-15
VT2365-20
VT2366-15
VT2366-20
"vlsi technology"
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SE82365SL
Abstract: SFH 6711 Lm 7011 Z365
Text: O K I Semiconductor Z36S PCM CIA 0.8|im T ech n olo gy M ega M acrocell DESCRIPTION The 2365 PCMCIA Mega Macrocell is a featured library element in OKI's 0.8|im Sea of Cates and 0.8|im Customer Structured Array families. The OKI implementation of the Mega Macrocell is fully compatible
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SE82365SL
68-pin
175IEES-MEM
SFH 6711
Lm 7011
Z365
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Hp 2564
Abstract: No abstract text available
Text: VT 2365/66 8,192 x 8 STATIC READ ONLY MEMORY FEATURES DESCRIPTION • 8,192 x 8-bit organization The VT2365/66 h ig h-p erform an ce Read Only M em ory is organized 8,192 words by e ig ht bits with an access tim e o f 150 ns. The ROM is co m p a tib le with all microprocessors a nd similar
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VT2365/66
VT2365/66
Hp 2564
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ORCAT
Abstract: SE82365SL IR014 OKI D51 rtl 8112 MSM98S000 Z365 00WS 5CTI 51ti
Text: O K I Semiœnductor Z365 PCMCIA 0.8|jm T e c h n o lo g y Mega M acrocell DESCRIPTION The 2365 PCMCIA Mega Macrocell is a featured library element in OKI's 0.8p,m Sea of Gates and 0.8|im Customer Structured Array families. The OKI implementation of the Mega Macrocell is fully compatible
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SE82365SL
68-pin
ORCAT
IR014
OKI D51
rtl 8112
MSM98S000
Z365
00WS
5CTI
51ti
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2364 eprom
Abstract: FA1018 2365 ROM EPROM 2364 2364 rom ROM 2364 mask rom km2365 2365+ROM
Text: KM2364/KM2365 NMOS MASK ROM 8 K x 8 Bit Mask ROM FEATURES GENERAL DESCRIPTION • • • • • The KM2365/65 are mask programmable read only memories with 8K word by 8 bit organizations. Designed for ease of use, these devices require only a 5-volt sup
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KM2364/KM2365
2364S/65S:
2364I/65I
2364HR/65HR
KM2365/65
1N3064
2364 eprom
FA1018
2365 ROM
EPROM 2364
2364 rom
ROM 2364
mask rom
km2365
2365+ROM
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SCM23C65
Abstract: No abstract text available
Text: SOLID STATE ^ SCIENTIFIC SCM23C65 883/23C65 8192 x 8 Static CMOS ROM Features Pin Configuration w nc 1 1 • 281 a 12 I 2 271 1C S 1 /5 5 Î a 7 II 3 261 I CS2/CS2 a 6 II 4 251 I As a5 1 5 241 I Ag a 4 II 6 231 1 A „ II 7 3 A* I I A' II 221 I OE/Ö1 •
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SCM23C65
883/23C65
150ns/200ns/300ns
50/iA
883/23C65M
SCM23C65R
23C65
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TMM2365P
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TMM2365P 64K BIT 8K WORD X 8 BIT MASK ROM N-CHANNEL SILICON GATE DESCRIPTION is a 6 5 5 3 6 b it f u lly s ta tic read (CE-, ~ a /C E , _ 3 ), th e o p e ra tin g c u rre n t is reduced o n ly m e m o ry o rg a n ize d as 8 1 9 2 w o rd s b y 8 b its w ith
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TMM2365P
10Qus
2365P
TMM2365P
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TMM2764D
Abstract: TMM2365P 32x8 EPROM TMM2365
Text: TOSHIBA MOS MEMORY PRODUCTS 64K BIT 8K W O R D X 8 BIT M A S K ROM TMM2365P N-CHANNEL SILICON GATE O DESCRIPTION T he T M M 2 3 6 5 P is a 6 5 5 3 6 b it f u lly s ta tic read (CE-, ~ 3 /C E i ~ 3 ), th e o p e ra tin g c u rre n t is reduced o n ly m e m o ry o rg a n ize d as 81 9 2 w o rd s b y 8 b its w ith
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TMM2365P
TMM2365P
TMM2764D,
200ns
100mA
TMM2365
TMM2764D
32x8 EPROM
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