bc 357 transistor
Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Text: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver
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CB-76
bc 357 transistor
transistor BC 55
bc 106 transistor
transistor bc 102
bc 103 transistor
transistor C238
TRANSISTOR BC 237
TRANSISTOR BC 239 c
bc 330 transistor
TRANSISTOR BC
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T74LS266B1
Abstract: No abstract text available
Text: S G S-THOMSON Ü 7 E D I 7^2^237 QDlti2Lil 5 J LOW POWER SCHOTTKY INTEGRATED CIRCUITS Ai - 67C16390 T54LS266 T74LS266 Ì T -tz -tS D QUAD 2-INPUT EXCLUSIVE NOR GATE DESCRIPTION The T54LS266/T74LS266 Is a high speed QUAD
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T54LS266
T74LS266
T54LS266/T74LS266
67C16390
T74LS266
T74LS266B1
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STF8045AV
Abstract: No abstract text available
Text: 3DE D • 7^237 QG3D512 ô SGS-THOMSON STF8045AF STF8045AV S G S-THOMSON NPN DARLINGTON POWER MODULE EASY TO DRIVE TECHNOLOGY ETD ■ HIGH CURRENT POWER BIPOLAR . MODULE VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE (2500V RMS)
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QG3D512
STF8045AF
STF8045AV
STF8045AV
STF8045AF
O-240)
PC-029«
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Untitled
Abstract: No abstract text available
Text: • 7^ 5^237 ODB^m ? ^ ■ H " '3 3 ~ S _ SGS-THOMSON 2N6674 ML[lo @iOOi_2N6675 S G S-THOMSON 30E D NPN HIGH VOLTAGE POWER TRANSISTORS ■ ■ ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS
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2N6674
2N6675
2N6674-2N6675
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TDA9102B
Abstract: TDA9102C DIP20 pulse generator 30hz
Text: 42E D 7*12^237 Q034Ö20 b IS6TH TDA9102B TDA9102C SGS-THOMSON m S 6 S-THOMSON • T - 77 -0 7 -0 5 HA/ PROCESSOR FOR TTL V.D.U PRELIMINARY DATA HORIZONTAL SECTION • SYNCHRONIZATION INPUT : TTL COM PATIBLE, NEGATIVE EDGE TRIGGERED' ■SYNCHRONIZATION INDEPENDENT FROM
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TDA9102B
15kHz
100kHz
FORTDA9102B
TDA9102C
91DSTDA9102-01
TDA9102B
7cJ2cl237
T-77-07-05
TDA9102C
DIP20
pulse generator 30hz
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Diode D7E
Abstract: sef220 SEF221
Text: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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SEF220
SEF221
SEF222
SEF223
00V/150
SEF223
Diode D7E
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STF6045DV
Abstract: BD405 transistor b 1185 BD 149 transistor
Text: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL
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DG30SDb
STF6045DF
STF6045DV
O-240)
PC-029«
STF6045DV
BD405
transistor b 1185
BD 149 transistor
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BTW69-200N
Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
Text: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION
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00314G2
BTW69-200N
1200N
BTW69BTW
scr 122
btw69200n
69200N
LT 7237
SCR 1989
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BUF460AF
Abstract: SC04840 BUF460AV ETD 41 035 pin diagram of ic 1496 JF460AF
Text: 3DE D • 7=12^237 QQ3Q35b =1 ■ SGS-THOMSON s 6 s-thomson JF460AF ^ 7# OSOieiamiCTR »!« BUF460AV r - 3 3 '1 s NPN TRANSISTOR POWER MODULE . . . ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL
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QQ3G35b
JF460AF
BUF460AV
T-33-1S
BUF460AF
SC04840
T-91-20
O-240)
ETD 41 035
pin diagram of ic 1496
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breakover device
Abstract: THBT200D THBT SGS-Thomson thbt
Text: 3GE D KB ? clEtì 237 ÜÜ35DS0 fi • Æ T SCS-TMOMSON ' T : ?Z-( s G S-THOMSON THBT 200 D TRISIL DESCRIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, it enables to protect integrated SLIC against
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35DS0
10/700nduction
7T5TE37
T-62-11
D89THBT200DP4
breakover device
THBT200D
THBT SGS-Thomson
thbt
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Untitled
Abstract: No abstract text available
Text: m BOE D " T 7^ l'\S 7^2^237 QG3D'^S T • BFX89 BFY90 SGS-THOMSON tLiOTOOiOOS S-THOMSON WIDE BAND VHF/UHF AMPLIFIER a SILICON PLANAR EPITAXIAL TRANSISTORS ■ TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIONS : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER
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BFX89
BFY90
BFY90
BFR99A.
G-t33J
BFX89-BFY9Q
0030Tifl
T-31-15
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Untitled
Abstract: No abstract text available
Text: 3DE » • 7^237 □QBÜ'iaS S ■ T i• V°| / r : SCS-THOM SON ^_ 7# 5 C L l ^ g « S _ B C 3 9 4 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN trans
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BC394
BC393.
BC394
T-31-19
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Untitled
Abstract: No abstract text available
Text: 7^2^237 0045434 725 • SGTH SGS-THOMSON MK5027 SS7 SIGNALLING LINK CONTROLLER ■ CMOS ■ FULLY COMPATIBLE WITH BOTH 8 OR 16 BIT SYSTEMS ■ SYSTEM CLOCK RATE TO 10MHz ■ DATA RATE UP TO 2.5Mbps FOR SS7 PROTO COL PROCESSING , 7Mbps FOR TRANSPAR ENT HDLC MODE
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MK5027
10MHz
48-PIN
MK5025)
MK5032)
MK5027
600ns
100ns
K5027
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200B
Abstract: 400B 600B 700B 800B BTB24
Text: 30E D • 7^237 DQ3175b ö SGS-THOMSON "T -Z S -1 7 BTB 24 B S G S-THOMSON TRIACS GLASS PASSIVATED CHIP Igt SPECIFIED IN FOUR QUADRANTS DESCRIPTIO N New range suited for applications such as phase control and static switching. ABSO LU TE RATINGS limiting values
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DQ317Sb
T-25-7
200B
400B
600B
700B
800B
BTB24
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Untitled
Abstract: No abstract text available
Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.
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2N5875-2N5876
2N5877-2N5878
2N5877
2N5878
2N5875
2N5876
hFE-10
2N5875/6/7/8
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ST5420
Abstract: ST5451 br b2d
Text: • 7^2^237 0D4S212 2TT ■S6TH _ SGS-THOMSON ST5420 SID-iiW : S/T INTERFACE DEVICE WITH MICROWIRE/DSI ADVA N C E DATA As specified in I.430, full-duplex transmission at 192kb/s is provided on separate transmit and receive twisted wire pairs using inverted Alternate Mark In
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0D4S212
ST5420
144KBIT/S
ST5075
tiB8ST542B-B7
H88ST542B-BB
004523B
ST5420
ST5451
br b2d
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Crystal Oscillator 12MHz
Abstract: Z86E21 xtal 12MHz 12MHZ program for uart Xtal 8Mhz crystal
Text: 7^2^237 rzT DG2bfl37 S SGS-THOMSON ^7# 5 _ Z86E21 S G S- T HOMSON 30E D 8K EPROM MICROCOMPUTERS • COMPLETE MICROCOMPUTER, 8K BYTES OF EPROM 240 BYTES OF RAM 32 I/O LINES, AND UP TO 56K BYTES ADDRESSABLE EX TERNAL SPACE EACH FOR PROGRAM AND
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0G2bfl37
Z86E21
256-BYTE
12MHz
12MHZ
40-PIN
44-LEAD
8192x
Crystal Oscillator 12MHz
Z86E21
xtal 12MHz
program for uart
Xtal 8Mhz crystal
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stk audio power amplifiers
Abstract: D556 stk 013
Text: ¿57 7=12^237 G G H b llG • S G T H _ SGS-THOMSON ¡OJOTO «! STK18N05 STK18N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RdS oii Id STK18N05 50 V < 0.085 a 18 A STK18N06 60 V < 0.085 £2 18 A ■ . ■ ■
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STK18N05
STK18N06
STK1BN05
STK1BN06
STK18N05/STK18N06
stk audio power amplifiers
D556
stk 013
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2N3964
Abstract: 2N3963 2N3965 3964-2N 2N3962 3963-2N
Text: 3GE D • 7^237 DÜ311TS S ■ _ f Z 7 SCS-THOM SON ^T # ¡ ^ V l > \ ~ \ ù[ 2N3962/2N3963 2N3964/2N3965 S G S-THOMSON LOW NOISE, LOW LEVEL AMPLIFIERS DESCRIPTION The 2N3962, 2N3963, 2N3964 and 2N3965 are si licon planar epitaxial PNP transistors in Jedec
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311TS
2N3962/2N3963
2N3964/2N3965
2N3962,
2N3963,
2N3964
2N3965
2N3962
2N3963
3964-2N
3963-2N
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UL02003
Abstract: ulq2003 ULQ2001R ULQ2002R ULQ2003R ULQ2004R T432 72kn T-43-25
Text: 7^2^237 D022472 M • ¡ " T ;ttV'L5> SGS-THOMSON ULQ2001R/2R _ ULQ2003R/4R S G S-THOMSON 3DE D SEVEN DARLINGTON ARRAYS ■ SEVEN DARLINGTONS PER PACKAGE ■ OUTPUT CURRENT 500 mA PER DRIVER 600 mA PEAK ■ OUTPUT VOLTAGE 50 V ■ INTEGRAL SUPPRESSION DIODES FOR IN
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D022472
ULQ2001R/2R
ULQ2003R/4R
ULQ2001R,
ULQ2002R,
ULQ2003R
ULQ2004R
ULQ2001R
ULQ2001R-ULQ2002R-ULQ2003R-ULQ2004R
T-43-
UL02003
ulq2003
ULQ2001R
ULQ2002R
T432
72kn
T-43-25
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tda7374
Abstract: TDA 7374 V ap 7302 b transistor ap 7302 b
Text: M2E 7=12^237 » Q03bb42 s SCS-THOMSON 7 BISÛTH G S - TH OM SO N TDA7374 ¡y ~ 7 # -0 S -0 \ DUAL BRIDGE AUDIO AMPLIFIER FOR CAR RADIO ' ; ADVANCE DATA • MINIMUM EXTERNAL COMPONENT COUNT ■ NO BOOTSTRAP CAPACITORS a NO BOUCHEROT CELLS ■ CLIP DETECTOR OUTPUT
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Q03bb42
TDA7374
TDA7374
TDA7302
TDA7302
TDA 7374 V
ap 7302 b transistor
ap 7302 b
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Untitled
Abstract: No abstract text available
Text: 3QE D 7^237 0031101 3 T ' Z \ - \ 1 Gl SCS-THOMSON 2N930 me S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise am
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2N930
2N930
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Untitled
Abstract: No abstract text available
Text: 7*^237 ¡üi DOMbSES SRñ • SGTH SCS-THOMSON STP55N05L STP55N05LFI ilL IO T «! N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP55N05L STP55N05LFI V dss R dS OTI Id 50 V 50 V < 0.023 n < 0.023 £2 55 A 30 A . TYPICAL RDS(on) = 0.02 Q.
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STP55N05L
STP55N05LFI
O-220
ISOWATT220
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Untitled
Abstract: No abstract text available
Text: un 7^5^237 0020741 2 • SGS-THOMSON [»[H ] »gC T(g«S 13 BUV46/FI BUV46A/AFI S G S-TH0MS0N 3QE ]> HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedecTO-220 plastic package and ISOWATT22C fully isolated
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BUV46/FI
BUV46A/AFI
BUV46/A
BUV46FI/AFI
jedecTO-220
ISOWATT22C)
BUV46
V46FI
300ns,
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