NTCLS100E
Abstract: NTCLE400E3 NTCLE400
Text: 2381 641 2/3/4. Vishay BCcomponents NTC Thermistors, Special Long Lead Sensors FEATURES • Accurate over wide temperature range • High stability • Excellent price/performance ratio • High adhesive strength between PVC wire and the encapsulating laquer
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2002/95/EC
2002/96/EC
B25/85
08-Apr-05
NTCLS100E
NTCLE400E3
NTCLE400
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VISHAY Bar code label
Abstract: No abstract text available
Text: VLMG21. Vishay Semiconductors Standard Mini SMD LED FEATURES • SMD LEDs with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • IR reflow soldering • Available in 8 mm tape
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VLMG21.
2002/95/EC
2002/96/EC
AEC-Q101
08-Apr-05
VISHAY Bar code label
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Si1905BDH
Abstract: No abstract text available
Text: SPICE Device Model Si1905BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1905BDH
S-71491Rev.
23-Jul-07
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SiA419DJ
Abstract: No abstract text available
Text: SPICE Device Model SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA419DJ
S-71495Rev.
23-Jul-07
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74888
Abstract: No abstract text available
Text: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1405BDH
S-71490Rev.
23-Jul-07
74888
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Untitled
Abstract: No abstract text available
Text: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
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SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
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AN609
Abstract: Si7411DN
Text: Si7411DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7411DN
AN609
23-Jul-07
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S-71493
Abstract: Si7848BDP
Text: SPICE Device Model Si7848BDP Vishay Siliconix Dual N-Channel 40V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7848BDP
18-Jul-08
S-71493
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Si4340DY
Abstract: No abstract text available
Text: SPICE Device Model Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4340DY
18-Jul-08
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69-206
Abstract: 13005-2 8541 69206 130052 7930 AN609 Si7366DP
Text: Si7366DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7366DP
AN609
23-Jul-07
69-206
13005-2
8541
69206
130052
7930
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c 3927
Abstract: MOSFET 7121 AN609 Si7384DP
Text: Si7384DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7384DP
AN609
23-Jul-07
c 3927
MOSFET 7121
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69156
Abstract: A 69156
Text: SPICE Device Model SUD50NP04-145 Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50NP04-145
18-Jul-08
69156
A 69156
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Si4308DY
Abstract: No abstract text available
Text: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4308DY
18-Jul-08
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SUP40N10-30
Abstract: No abstract text available
Text: SPICE Device Model SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP40N10-30
S-71510Rev.
23-Jul-07
SUP40N10-30
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74164
Abstract: 74164 APPLICATION Si4446DY
Text: SPICE Device Model Si4446DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4446DY
S-71509Rev.
23-Jul-07
74164
74164 APPLICATION
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Si4308DY
Abstract: on 398
Text: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4308DY
S-71499Rev.
23-Jul-07
on 398
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Untitled
Abstract: No abstract text available
Text: FP Vishay Dale Metal Film Resistors, Industrial, Flameproof FEATURES • Small physical size Pb-free • Low cost Available • FP resistors have the ability to withstand overloads up to 100 times rated power without e3 any trace of flame • Exceptional frequency characteristics
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FP01/2
FP0001
FP0032
FP0002
FP0042
FP0003
FP0004
FP0005
FP0007
FP0010
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C 4977
Abstract: ON 4977 SUP40N25-60
Text: SPICE Device Model SUP40N25-60 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP40N25-60
S-71512Rev.
23-Jul-07
C 4977
ON 4977
SUP40N25-60
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si7848bdp
Abstract: 4556S
Text: SPICE Device Model Si7848BDP Vishay Siliconix Dual N-Channel 40V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7848BDP
S-71493Rev.
23-Jul-07
4556S
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA913DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA913DJ
S-71492Rev.
23-Jul-07
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6903
Abstract: AN609 Si7344DP 373386
Text: Si7344DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7344DP
AN609
23-Jul-07
6903
373386
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA917DJ
18-Jul-08
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SC75
Abstract: SC-75 SiP4282A
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
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SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
SC75
SC-75
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Untitled
Abstract: No abstract text available
Text: Tyco Electronics Product Specification 108-5667 ü f f i& Í S 23JUL07 Rev. D4 0 2 5 /0 9 0 1 I/O CONNECTOR 1. Scope: 1.1 C o n te n ts T h is s p e c ific a tio n c o v e rs th e re q u ire m e n ts f o r p ro d u c t p e rfo rm a n ce , t e s t m e th o d s and q u a lity a s s u ra n c e p ro v is io n s o f
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23JUL07
090II
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