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    23N50 Search Results

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    23N50 Price and Stock

    Vishay Siliconix IRFP23N50LPBF

    MOSFET N-CH 500V 23A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP23N50LPBF Tube 447 1
    • 1 $8.57
    • 10 $8.57
    • 100 $8.57
    • 1000 $8.57
    • 10000 $8.57
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    Bristol Electronics IRFP23N50LPBF 250
    • 1 -
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    HUBER+SUHNER 23_N-50-0-1-133_NE

    23_N-50-0-1/133_NE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 23_N-50-0-1-133_NE Bulk 441 1
    • 1 $13.85
    • 10 $11.768
    • 100 $10.6876
    • 1000 $10.6876
    • 10000 $10.6876
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    HUBER+SUHNER 23_N-50-0-16-133_NE

    23_N-50-0-16/133_NE
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    DigiKey 23_N-50-0-16-133_NE Bulk 368 1
    • 1 $32.04
    • 10 $27.232
    • 100 $23.1503
    • 1000 $21.70256
    • 10000 $21.70256
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    HUBER+SUHNER 23_N-50-0-30-133_NE

    23_N-50-0-30/133_NE
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    DigiKey 23_N-50-0-30-133_NE Bulk 176 1
    • 1 $26.6
    • 10 $22.606
    • 100 $19.2167
    • 1000 $17.15622
    • 10000 $17.15622
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    HUBER+SUHNER 23_N-50-0-31-133_NE

    23_N-50-0-31/133_NE
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    DigiKey 23_N-50-0-31-133_NE Bulk 8 1
    • 1 $26.53
    • 10 $22.545
    • 100 $19.1653
    • 1000 $17.11042
    • 10000 $17.11042
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    23N50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    23_N-50-0-1/133_NE HUBER+SUHNER 23_N-50-0-1/133_NE Original PDF
    23_N-50-0-16/133_NE HUBER+SUHNER 23_N-50-0-16/133_NE Original PDF
    23_N-50-0-23/133_NE HUBER+SUHNER 23_N-50-0-23/133_NE Original PDF
    23_N-50-0-30/133_NE HUBER+SUHNER 23_N-50-0-30/133_NE Original PDF

    23N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3590S-491-103

    Abstract: 23n50 13N50
    Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    BLF6G15L-40BRN 3590S-491-103 23n50 13N50 PDF

    23N50

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN PDF

    R161051000

    Abstract: 24N50 272b1 R161183000 R161311300 53S107-803N3 astro 612118 53s101 11N-50-7-43C 53K401-200N3
    Text: Connectivity.for Business-Critical Continuity Type N Connectors Product Catalog Connectivity.for Business-Critical Continuity Type N Connectors Johnson Type N Connectors meet or exceed the performance requirements of MIL-PRF-39012. All designs are based on 50 ohm system impedance per MIL-STD-348, and operate at frequencies up to


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    MIL-PRF-39012. MIL-STD-348, R161051000 24N50 272b1 R161183000 R161311300 53S107-803N3 astro 612118 53s101 11N-50-7-43C 53K401-200N3 PDF

    23N50E

    Abstract: FMA23N50E N-channel MOSFET 23n50e mosfet 23n50e erse rds 80 Power MOSFET 23n50e 23n50e mosfet 23n50e semiconductor 23n50
    Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


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    October-26-2007 MS5F06946 FMA23N50E H04-004-05 MS5F06946 H04-004-03 23N50E FMA23N50E N-channel MOSFET 23n50e mosfet 23n50e erse rds 80 Power MOSFET 23n50e 23n50e mosfet 23n50e semiconductor 23n50 PDF

    fmh*23N50E

    Abstract: 23n50e Power MOSFET 23n50e 23n50e mosfet MS5F06944 23N50E,FMH23N50E,25N50G, 23n50e semiconductor FMH23N50E mosfet 23n50e 23n50
    Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


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    October-26-2007 MS5F06944 FMH23N50E H04-004-05 MS5F06944 H04-004-03 fmh*23N50E 23n50e Power MOSFET 23n50e 23n50e mosfet 23N50E,FMH23N50E,25N50G, 23n50e semiconductor FMH23N50E mosfet 23n50e 23n50 PDF

    CRT - TCL COLOUR TV SCHEMATIC DIAGRAM

    Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A
    Text: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF

    23N50E

    Abstract: Power MOSFET 23n50e 23n50e semiconductor 23n50e mosfet mosfet 23n50e FMR23N50E 23N50E datasheet 100V 100A Mosfet MS5F06945
    Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    FMR23N50E MS5F06945 October-26-2007 H04-004-05 MS5F06945 H04-004-03 23N50E Power MOSFET 23n50e 23n50e semiconductor 23n50e mosfet mosfet 23n50e FMR23N50E 23N50E datasheet 100V 100A Mosfet PDF

    23n50e

    Abstract: Power MOSFET 23n50e 23n50e mosfet mosfet 23n50e fmh*23N50E 23n50e semiconductor N-channel MOSFET 23n50e FMH23N50E 23n50 MS5F06944
    Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    FMH23N50E MS5F06944 October-26-2007 H04-004-05 MS5F06944 H04-004-03 23n50e Power MOSFET 23n50e 23n50e mosfet mosfet 23n50e fmh*23N50E 23n50e semiconductor N-channel MOSFET 23n50e FMH23N50E 23n50 PDF

    8140115

    Abstract: 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G
    Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 2 — 9 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.


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    BLF7G20L-250P; BLF7G20LS-250P BLF7G20L-250P 7G20LS-250P 8140115 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G PDF

    13N50

    Abstract: 8140115 nxp marking code M2
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    BLF6G15L-250PBRN 13N50 8140115 nxp marking code M2 PDF

    23n50e

    Abstract: 23N50ES fmh*23N50E FMH23N50ES FMH23N50E Ic C 141 fmh23n50
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    FMH23N50ES MS5F7237 H04-004-05 H04-004-03 23n50e 23N50ES fmh*23N50E FMH23N50ES FMH23N50E Ic C 141 fmh23n50 PDF

    23n50

    Abstract: 23N-50 N-50-0-1
    Text: Huber & Suhner - Panel Connectors Details Order number: SUHNER Type: Order Number: Series: Elecrical Data: Impedance: Frequency Range: Material Data: Center contact: Outer contact: Body: Insulator: General Information: Interface according to: Weight: Packaging:


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    23n-50-0-16 N-50-0-16 MIL-STD-348 S00652 html/23N50 23n50 23N-50 N-50-0-1 PDF

    upc 1185 h

    Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
    Text: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions


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    AS3B119GM10M AS5B125EM50M AS6B118GM50M 1310nm) 1550nm) upc 1185 h mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E PDF

    BLS2933-100

    Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
    Text: BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor at a supply voltage of 32 V for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.


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    BLS2933-100 BLS2933-100 T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057 PDF

    8140 SOURIAU

    Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 8140 SOURIAU BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115 PDF

    23n50e

    Abstract: Power MOSFET 23n50e 23n50e mosfet FMR23N50E N-channel MOSFET 23n50e mosfet 23n50e 23n50e semiconductor
    Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


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    October-26-2007 MS5F06945 FMR23N50E H04-004-05 MS5F06945 H04-004-03 23n50e Power MOSFET 23n50e 23n50e mosfet FMR23N50E N-channel MOSFET 23n50e mosfet 23n50e 23n50e semiconductor PDF

    23n50e

    Abstract: 23N50ES fmv23n50e Ic C 141 23n50
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    FMV23N50ES MS5F7236 H04-004-05 H04-004-03 23n50e 23N50ES fmv23n50e Ic C 141 23n50 PDF

    23n50e

    Abstract: FMR23N50E Ic C 141 23N50ES
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    FMR23N50ES MS5F7238 H04-004-05 H04-004-03 23n50e FMR23N50E Ic C 141 23N50ES PDF