Untitled
Abstract: No abstract text available
Text: Features ICE Technology* • +115°C Maximum Case Temperature • -45°C Minimum Case Temperature • Built-in EMC Filter • Ribbed Case Style • 2250VDC Isolation • Built-in EMC Filter, EN-55022 Class B DC/DC Converter RPP30-2424D Description 30 Watt 2:1
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2250VDC
EN-55022
RPP30-2424D
RPP30
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Untitled
Abstract: No abstract text available
Text: Features ICE Technology* • +115°C Maximum Case Temperature • -45°C Minimum Case Temperature • Built-in EMC Filter • Ribbed Case Style • 2250VDC Isolation • Built-in EMC Filter, EN-55022 Class B DC/DC Converter RPP20-2424D Description 20 Watt 2:1
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2250VDC
EN-55022
RPP20-2424D
RPP20
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transistor a7g
Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Text: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.
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MSM514101_
304-Word
MSM514101
26-pin
20-pin
18-pin
--MSM514101.
transistor a7g
a105g
MSM temperature spec
til 31a
MSM514101-10
MSM514101-70
MSM514101-80
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power
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MSM5117170
576-Word
16-Bit
MSM5117170
42-pin
50/44-pin
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USER S MANUAL oki 32 lcd tv
Abstract: USER MANUAL oki 42 lcd tv USER S MANUAL oki 22 lcd tv MSM64155A MSM64P155 QFP100-P-1420-BK USER MANUAL oki 22 lcd tv
Text: O K I Semiconductor MSM64155A/64155AL Built-in M elody C ircu it and L C D D river 4-Bit M icrocontroller GEN ERAL DESCRIPTION The MSM64155A 1.5 V /64155A L (3.0 V) is a 4-bit microcontroller that incorporates an n X -4/ 20 CPU core. The MSM64155A fam ily offers a built-in 256-nibble data m em ory, 4-Kbyte program
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MSM64155A
MSM64155AL
MSM64155A
/64155A
256-nibble
002423b
MSM64155A/64155AL
64155AL
USER S MANUAL oki 32 lcd tv
USER MANUAL oki 42 lcd tv
USER S MANUAL oki 22 lcd tv
MSM64P155
QFP100-P-1420-BK
USER MANUAL oki 22 lcd tv
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MSM5416263
Abstract: 256x16* STATIC RAM weland SM5416
Text: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416263
144-Word
16-Bit
MSM5416263
512-word
256x16* STATIC RAM
weland
SM5416
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Manufacturer Logos
Abstract: smd marking ZC
Text: O K I electronic components KGF2701_ Wide-Band Amplifier for Microwave UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF2701, housed in an SMD-type 8-pin ceramic package, is a two-stage amplifier that features flat and high gain over a wide range of frequencies, internal input and output matching,
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MAS 10 RCD
Abstract: MSM54V32128 1DQ23
Text: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate
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MSM54V32126/8_
072-Word
32-Bit
MSM54V32126/8
MSM54V32128
MAS 10 RCD
1DQ23
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EZ23
Abstract: MSM5432128
Text: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate
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MSM5432126/8_
072-Word
32-Bit
MSM5432126/8
MSM5432128
EZ23
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
capab40
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MSM64162-XXX
Abstract: MSM64162 sis 496 Ml17
Text: O K I Semiconductor M S M 6 4 1 6 2 _ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 64162 is a low pow er 4-bit m icrocontroller using O K I original C P U core n X -4 /2 0 . The M SM 64162 has the m inim u m instruction execution tim e o f 7.5 |is @ 400 kH z and has
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MSM64162_
MSM64162
nX-4/20.
2016-byte
128-nibble
MSM64162
b7e4E40
MSM64162-XXX
sis 496
Ml17
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clinical Thermometer
Abstract: Thermometer clock LCD ic xl 1507 MSM5052-02 lcd N7 Linear Thermometer ic 3.5-DIGIT lcd IC 2025 Thermometer ic oki c301
Text: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °
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MSM5052-02
MSM5052-02
80-PIN
QFP80-P-1420-K
QFP84-P-1420-BK
clinical Thermometer
Thermometer clock LCD ic
xl 1507
lcd N7
Linear Thermometer ic
3.5-DIGIT lcd
IC 2025
Thermometer ic
oki c301
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MSM5116400C
Abstract: No abstract text available
Text: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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E2G0106-18-42
MSM5116400C_
304-Word
MSM5116400C
26/24-pin
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active suspension
Abstract: m56v16 m56v1640010
Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM56V16400_
152-Word
MSM56V16400
cycles/64
b7E424G
DD2Q377
active suspension
m56v16
m56v1640010
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MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
304-Word
MSM5117405B
26/24-pin
MSM5117405
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MSM511000
Abstract: ZIP20-P-400 dip26
Text: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is
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MSM511000B/BL
576-Word
MSM511000B/BL
18-pin
26/20-pin
20-pin
MSM511000BL
MSM511000
ZIP20-P-400
dip26
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power
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MSM51V17160
576-Word
16-Bit
MSM51V17160
42-pin
50/44-pin
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LF400
Abstract: R-1525 OL561N-25 OL564N-25
Text: O K I electronic components OL561N-25, OL564N-25 1.55 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL561N-25 and OL564N-25 are 1.55 Jim, extremely high power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum Well MQW structure laser diodes achieve a single
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OL561N-25,
OL564N-25
OL561N-25
OL564N-25
14-pin
OL561N-25)
b7E4240S
OL561N-25
2424D
LF400
R-1525
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DG21
Abstract: No abstract text available
Text: O K I Sem iconductor M SC 23437A -X X B S9/D S9 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC23437A -xxBS9/D S9 is a fully decoded 4,194,304-w ord x 36-bit CMOS Dynamic Random A ccess M em ory M odule com posed of nine 16-Mb DRAMs 4M x 4 in SOJ packages
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MSC23437A-XXBS9
MSC23437A-XXDS9
304-Word
36-Bit
SC23437A
304-w
16-Mb
72-pin
DG21
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IO100
Abstract: MSM6648
Text: O K I Semiconductor MSM6648 1QO-DOT CO M M O N DRIVER GENERAL DESCRIPTION T he MSM6648 is an LCD d o t m atrix com m on d riv er of a CM OS IC w hich consists o f tw o 50-bit bi-directional shift registers, each b it level shifter, a n d a 4-level driv er.
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MSM6648
MSM6648
50-bit
MSM6648s
10-bit
b724240
b72H2H0
IO100
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MSM5416283-60
Abstract: MSM5416283 SAM256
Text: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416283
144-Word
16-Bit
MSM5416283
512-word
SSOP60-P-700-0
MSM5416283-60
SAM256
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TRANSISTOR BO 346
Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Text: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic
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QCS30_
OCS30
E86831
Vnu-50
h72H2H0
OCS30
TRANSISTOR BO 346
transistor bd 346
TRANSISTOR BO 341
TRANSISTOR BO 345
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v17805
Abstract: MSM51V17805BSL msm51v17805b
Text: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B /B SL achieves high integration, high-speed operation, and
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E2G0079-17-41
MSM51V17805B/BSL_
152-Word
MSM51V17805B/BSL
MSM51VI7805B
28-pin
MSM51V17805BSL
v17805
MSM51V17805BSL
msm51v17805b
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J
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MSC23T/P1720C-XXBS18
576-Word
72-Bit
MSC23T/D1720C-xxBS18
168-pin
72-bit
MSC23T1720C-xxBS18
MSC23D1720C-xxBS18
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