24N60
Abstract: 24N60A 1365c
Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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24N60
24N60A
24N60
24N60A
1365c
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G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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24N60A
Abstract: 24N60AU1
Text: HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 48 A I C90 TC = 90°C 24
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24N60A
O-247
24N60A
24N60AU1
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24N60AU1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25
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24N60U1
24N60AU1
O-247
24N60AU1
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24N60A
Abstract: 24N60
Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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24N60
24N60A
O-247
24N60A
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24n60au1
Abstract: 24N60U1 24n60 TO-247 weight C600 igbt 24n60au1 24N60U
Text: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25
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24N60U1
24N60AU1
O-247
24n60au1
24N60U1
24n60
TO-247 weight
C600
igbt 24n60au1
24N60U
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24N60AU1
Abstract: NS525
Text: HiPerFASTTM IGBT with Diode IXSH 24N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 48 A 2.7 V 275 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V
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24N60AU1
O-247
150tching
24N60AU1
NS525
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24N60A
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXSH 24N60A VCES IC25 VCE sat tfi Maximum Ratings TO-247 AD = = = = 600 V 48 A 2.7 V 275 ns Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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24N60A
O-247
24N60A
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24N60AU1
Abstract: 24N60A IXGH24N60A 24N60AU
Text: HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE sat tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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24N60A
24N60A
24N60AU1
IXGH24N60A
24N60AU
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24N60
Abstract: 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4
Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous
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24N60
24N60A
O-247
40N60A
24N60
40N60A4
40n60
robot control
24N60A
40N60A
D-68623
gate drive circuit for igbt
40n60a 4
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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OCR Scan
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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6008B
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C
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OCR Scan
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24N60AU1
6008B
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Untitled
Abstract: No abstract text available
Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C
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OCR Scan
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24N60A
24N60A
24N60AU1
4bflb22b
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smd diode JC 0p
Abstract: DIODE SMD GEM IXGH24N60AU1S
Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600
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OCR Scan
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24N60AU1
IXGH24N60AU1S
O-247
24N60AU1S)
24N60AU1S
D94006DE,
smd diode JC 0p
DIODE SMD GEM
IXGH24N60AU1S
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT IXSH 24N60 IXSH 24N60A VC E S ^C25 V CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability G_ Sym bol Test Conditions Maximum Ratings V ces Tj = 25°C to 15 0CC 6 00 V v CGR T j = 25°C to 150°C; R GE = 1 M Q 600 V v GES
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OCR Scan
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24N60
24N60A
O-247
24N60U1
24N60AU1
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IFR 640
Abstract: S41c 24N60A IXGA24N60A
Text: n i x Y S HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = w CES ^C25 v v CE sat tfi 600 V 48 A 2.7 V 275 ns Prelim inary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous
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OCR Scan
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24N60A
24N60A
O-247
O-263
IFR 640
S41c
IXGA24N60A
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IXGH24N60A
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT IXGH 24N60A v CES VCE sat = 600 V = 48 A = 2.7 V t = 110 ns ^C25 Maximum Ratings Symbol Test Conditions V * CES T j = 2 5 °C to 1 5 0 °C 600 V v CGR T,J = 25° C to 150° C;’ R C j„fc= 1 Mi2 600 V VGES Continuous +20 V VoEM
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OCR Scan
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24N60A
O-247
IXGH24N60A
24N60A
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IXGA24N60A
Abstract: No abstract text available
Text: DIXYS IXGA 24N60A IXGH 24N60A HiPerFAST IGBT = = = = CES C25 v ¥ CE sat tfi 600 V 48 A 2.7 V 275 ns Preliminary data Maximum Ratings Symbol Test Conditions v’ c e s ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 M£2 600 V v* GES Continuous
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OCR Scan
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24N60A
24N60A
O-263
O-247
24N60AU1
D94006DE,
IXGA24N60A
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS V CES HiPerFAST IGBT 600 V 600 V IXSH 24N60 IXSH 24N60A V C25 CE sat 48 A 2.2 V 48 A 2.7 V Short Circuit SOA Capability G_ Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V
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OCR Scan
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24N60
24N60A
Collect4N60A
24N60
24N60A
24N60U1
24N60AU1
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PDF
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Untitled
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient
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OCR Scan
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24N60A
flb22b
24N60A
24N60AU1
D94006DE,
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PDF
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24N60AU
Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V
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OCR Scan
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24N60U1
24N60AU1
IXSH24N60AU1
1999IXYS
24N60AU
ixsh24n60au1
TO-247 weight
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS T r t" \ » HiPerFAST IGBT with Diode IXSH 24N60AU1 IXSH 24N60AU1S v CES ^C25 v ¥ CE sat Combi Pack tfi 600 V 48 A 2.7 V 275 ns oc G P relim inary data Symbol Test Conditions VCES Tj VCGR T.J = 25°C to 1 50°C;5 RrF = Cat = Maximum Ratings 25°C to 150°C
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OCR Scan
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
24N60AU1)
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40N60A
Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A
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OCR Scan
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2N100
30N60
40N60
25N100
45N100
45N120
2N100A
10N60A
24N60A
30N6QA
40N60A
G 40N60 igbt
IXSN35N120AU1
IXSH 35N120AU1
50N60AU1
25N120AU1
IXLH35N120A
IXLK35N120AU1
IXLN35N120AU1
IXLN50N120A
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1XGH24N60A
Abstract: b236 b237 TXYS IXGH/24N60A
Text: inixYS HiPerFAST IGBT V CES IXGH 24N60A ^C25 v * CE sat l fi Symbol Test Conditions 4 Maximum Ratings VCES Tj = 25°C to 150°C 600 VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES v GEM Continuous ±20 V T ransient ±30 V ^C25 Tc -2 5«C 48 A ^090 Tc =90°C
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OCR Scan
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24N60A
O-247
24N60AU1
B2-37
1XGH24N60A
b236
b237
TXYS
IXGH/24N60A
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