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    24N80P Search Results

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    24N80P Price and Stock

    Littelfuse Inc IXFH24N80P

    MOSFET N-CH 800V 24A TO247AD
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    DigiKey IXFH24N80P Tube 200 1
    • 1 $7.99
    • 10 $7.99
    • 100 $6.53267
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    RS IXFH24N80P Bulk 8 Weeks 30
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    • 100 $10.1
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    Littelfuse Inc IXFT24N80P

    MOSFET N-CH 800V 24A TO268
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    DigiKey IXFT24N80P Tube 300
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    Newark IXFT24N80P Bulk 300
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    RS IXFT24N80P Bulk 8 Weeks 30
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    • 100 $11.51
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    Littelfuse Inc IXFK24N80P

    MOSFET N-CH 800V 24A TO264AA
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    DigiKey IXFK24N80P Tube 300
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    Newark IXFK24N80P Bulk 300
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    RS IXFK24N80P Bulk 8 Weeks 25
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    Amphenol Aerospace QWLD00C24N80P

    RECEPT
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    DigiKey QWLD00C24N80P Bulk 2
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    • 10 $795.585
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    Newark QWLD00C24N80P Bulk 1
    • 1 $986.96
    • 10 $914.74
    • 100 $854.56
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    Amphenol Aerospace QWLD02R24N80P

    RECEPT
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    DigiKey QWLD02R24N80P Bulk 2
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    • 10 $706.18
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    Newark QWLD02R24N80P Bulk 1
    • 1 $866.32
    • 10 $802.93
    • 100 $750.1
    • 1000 $750.1
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    24N80P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		24N80P PDF

    TO-264 weight

    Abstract: 24N80P 24n80 ixfk24n80p N-channel MOSFET to-247 ixfh24n80p IXFT24N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS on ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		24N80P O-247 O-268 TO-264 weight 24N80P 24n80 ixfk24n80p N-channel MOSFET to-247 ixfh24n80p IXFT24N80P PDF

    24n80

    Abstract: 24N80P ISOPLUS247 24N8
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		24N80P 24n80 24N80P ISOPLUS247 24N8 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS on ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		24N80P O-247 O-268 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF