S1365
Abstract: 133-002
Text: Bandpass Filter 250457B 1. Features IF bandpass filter Single-ended operation Ceramic Surface Mount Device SMD Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device (ESD) 2. Package Dimension 13.30±0.2 7.62±0.1 7 8 9
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250457B
08A001
S1365
Samjeong-Don11
NW8034-CS01
S1365
133-002
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silicon carbide
Abstract: CD-260-1
Text: SSE D CREE RESEARCH INC • 250457b OüQDOEfi 52D « C R E Silicon Carbide Ultraviolet Photodetector Chip 1mm x 1mm Die Size CD-260-1.00-D fl E S E A H C H - i N C The Leader tn Silicon Carbide Solld-State Technology Electrical/Optical Characteristics At TA= 25°C
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OCR Scan
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250457b
CD-260-1
250457b
8401LMI-SR4)
silicon carbide
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cree ultraviolet
Abstract: Ablestik photodetector silicon carbide
Text: H E 8 .E A S C H - 250457b OOOOOSfl 520 • CRE S5E D CREE RESEARCH INC ï N O Silicon Carbide Ultraviolet Photodetector Chip 1mm x 1mm Die Size CD-260-1.00-D . The Leader In Silicon Carbide Solkî-State Technology Electrical/Optical Characteristics At TA= 25°C
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OCR Scan
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PDF
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250457b
CD-260-1
8401LMI-SR4)
cree ultraviolet
Ablestik
photodetector
silicon carbide
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Ablestik
Abstract: silicon carbide CD-260-0.30-D photodetector HC 8401 UV-A Photodetector ti 8401
Text: CREE RESEARCH INC SSE D 250457b □□□□□2b 75fl WM CRE • Silicon Carbide Ultraviolet Photodetector Chip 300 im x 300jim Die Size CD-260-0.30-D rw iPmCt C 4 k t R E S E A F t C H ^ l N C The Leader te Silicon Caitride Solid-State Techno logy Electrical/Optical Characteristics (At TA= 25°C
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250457b
300jim
CD-260-0
300pm
361-S70Ã
Ablestik
silicon carbide
CD-260-0.30-D
photodetector
HC 8401
UV-A Photodetector
ti 8401
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silicon carbide
Abstract: silicon carbide LED cree c470
Text: CREE RESEARCH INC 4ÖE ]> E5G457b 0000051 17b • CRErW/*¿ Silicon Carbide Blue LED C470-5D Description The C470-5D is a silicon carbide LED die with a 470nm peak wavelength and a typical optical power output of 13|iW when encapsulated in a standard clear epoxy package. Typical applications include full color com
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E5G457b
C470-5D
C470-5D
470nm
250457b
919J361
silicon carbide
silicon carbide LED
cree c470
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c430-dh85 cree
Abstract: C430-DH85 C430DH85 00E-6 LED pulse derating curve silicon carbide LED silicon carbide silicon carbide LED cree
Text: Super Blue LED C430-DH85 r e s e a r c h » i n c . The Leader in Silicon Carbide Solid State Technology Applications Features • Outdoor Full Color Displays & Moving Message Signs High Performance - 600 ^iW • Solid State Incandescent Replacement Bulbs
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C430-DH85
C430-DH85
00E-6
00E-5
00E-4
00E-3
00E-2
250457b
c430-dh85 cree
C430DH85
00E-6
LED pulse derating curve
silicon carbide LED
silicon carbide
silicon carbide LED cree
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c430-dh85 cree
Abstract: C430DH85 Gan on silicon substrate LED pulse derating curve silicon carbide LED silicon carbide C430-DH85
Text: R E S E A R C H - 1 Super Blue LED C430-DH85 N C . The Leader in Silicon Carbide Solid State Technology A pp licatio ns Features • Outdoor Full Color Displays & Moving Message Signs High Performance - 600 p.W • Solid State Incandescent Replacement Bulbs
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C430-DH85
C430-DH85
300jLls
30mADC
250457b
c430-dh85 cree
C430DH85
Gan on silicon substrate
LED pulse derating curve
silicon carbide LED
silicon carbide
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uv flame sensor
Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor
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2771J
161-IMO
uv flame sensor
thermal conductivity sensor
27713
4h sic
ballistic sensor
Cree Microwave
cree package structure
X 1017
sac 326
2771J
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silicon carbide LED
Abstract: Sic led silicon carbide C470-5D Cree SiC blue cree c470
Text: CREE RESEARCH INC 4ÖE D • E5D457b 00D00S1 17b ■ C R E T - V l * iÄf Silicon Carbide Blue LED R E S E A R C H - C470-5D I N C îïiw Issderfti iSHcon Cati>^$oSd^âiate:Teci«noio9y Description The C470-5D is a silicon carbide LED die with a 470nm peak wavelength and a typical optical power output
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OCR Scan
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PDF
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E5D457b
00D00S1
C470-5D
C470-5D
470nm
13jiW
470nm
250457b
000GQ22
silicon carbide LED
Sic led
silicon carbide
Cree SiC blue
cree c470
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Untitled
Abstract: No abstract text available
Text: CREE RESEARCH INC SSE D • 2SG4S7L □□□□□2b 75fl « C R E Silicon Carbide Ultraviolet Photodetector Chip 300|im x 300 im Die Size CD-260-0.30-D WEÊÊBÈËgÊmÊÊ^m R E S E A 8 C H * Ï N C The Leader to Silicon Caitride So Ik&State Technology Electrical/Optical Characteristics At T A = 25°C)
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PDF
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CD-260-0
250457b
300pm
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