MTE1010A
Abstract: MTD6010A
Text: PHOTO TRANSISTOR MARKTECH INTERNATIONAL läE D ST^bSS QQQGMOÔ 1 MTD6010Ä SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD R E A D E R S • V ELO C ITY S E N S O R FEATURES • High sensitivity: I I =250fiA
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0GDD40Ã
MTD6010A
MTE1010A.
-2J70K
MTE1010A
Ta-25
01STANCE
MTD6010A
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Untitled
Abstract: No abstract text available
Text: LT1351 r j u n e TECH NO LO G Y 250|nA, 3MHz, 200V/p.s O p e ra tio n a l A m p lifier F€OTUR€S DCSCRIPTIOfl • 3MHz Gain Bandwidth ■ 200V/jis Slew Rate ■ 250fiA Supply Current ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable
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LT1351
00V/p
LT1351
152mm)
254mm)
LT1352/LT1353
LT1354
250nA,
00V/ps
12MHz,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS EEPROM KM93C56V/KM93C66V 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3.0V~5.5V • Low power consumption — Active: 3 mA TTL — Standby: 250fiA (TTL) • Memory organization:
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KM93C56V/KM93C66V
250fiA
KM93C56V
KM93C66
KM93C56V/66V
93C56V/66V
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LM348J
Abstract: No abstract text available
Text: LM146 LM246 - LM346 SGS-THOMSON PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS • PROGRAMMABLE ELECTRICAL CHARAC TERISTICS ■ BATTERY POWERED OPERATION ■ LOW SUPPLY CURRENT 250fiA/amplifier ■ GAIN-BANDWIDTH PRODUCT : 1MHz ■ LARGE DC VOLTAGE GAIN : 120dB
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LM146
LM246
LM346
250fiA/amplifier)
120dB
28nV/VHz
DIP16
CERCHP16
LM348J
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IRFPC50
Abstract: No abstract text available
Text: PD-9.656A International SS Rectifier IRFPC50 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 6 0 0 V ^D S on - 0 . 6 0 Q
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IRFPC50
O-247
T0-220
O-218
IRFPC50
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Untitled
Abstract: No abstract text available
Text: AD VA N C E D PO WE R T E C H N O L O G Y blE D • Qg5 7 W QDDQfl3S 747 H A V P WWaa d v a n c ed POW ER Te c h n o l o g y QD 2N7227 400 Volt JX2N7227* JV2N7227* O S POWER MOS IV 0.315Q 'QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
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2N7227
JX2N7227*
JV2N7227*
MIL-S-19500/592
O-254AA
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IRC630
Abstract: No abstract text available
Text: International S Rectifier PD -9.565B IRC630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 200V R DS on = 0 . 4 0 0 lD = 9 .0 A
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IRC630
0-40O
IRC630
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irfz22
Abstract: IRFZ20/FI
Text: ZETEX SEMICONDUCTORS TSD D ^70370 0005S41 ZETBj T 1 95D 05541 D T*- 7 9 -H N-channel enhancement mode vertical D M O S FET IRFZ20 IRFZ22 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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0005S41
IRFZ20
IRFZ22
O-220
irfz22
IRFZ20/FI
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smd DA RN
Abstract: No abstract text available
Text: SG2000 SERIES 5IUC0N HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require
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SG2000
500mAcurrent
16-PIN
20-PIN
SG2XXXL/883B
fi553fi
smd DA RN
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transistor w1d
Abstract: 03N06C transistor w1d 90 TO-251AA W1D TRANSISTOR
Text: inteikil RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE D a tn S hee t J u l y 19 99 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N‘Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener
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RLD03N06CLE,
RLD03N06CLESM,
RLP03N06CLE
transistor w1d
03N06C
transistor w1d 90
TO-251AA
W1D TRANSISTOR
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2D 1002 diode
Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Text: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier
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OT-23.
EIA-S41.
2D 1002 diode
SMD MARKING CODE 9b 2b
smd diode marking LM
smd 2d 1002 -reel
S57C3
sot-23 Marking 3D
Switching Diode SOT23 Marking 3D
smd 2d 1002
S1902
diode Marking Code lm
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TTL 74-series IC
Abstract: IC 7493n FJJ14 TTL 7490 7401 ic configuration ic 7490n 7400N 7401N 7402N 7403AN
Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 7401N 7401 AN 7402N 7403N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7442N 7450N 7451N 7453N Mullard types Type No. Mullard types FJH131 FJH231 FJH311
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7400N
7401N
7402N
7403N
7403AN
7404N
7405N
7405AN
7420N
7430N
TTL 74-series IC
IC 7493n
FJJ14
TTL 7490
7401 ic configuration
ic 7490n
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IRFG1Z0
Abstract: CHN 617 irfg1ZO irfg 40 71713 IRFG1Z3 eg-1w
Text: HE 0 I MÖS54S2 GOOTbMQ Q | Data Sheet No. PD-9.395C INTERNATIONAL R E C T I F I E R I« R IN T E R N A T IO N A L R E C T IF IE R T -V 3 -2 S HEXFET TRANSISTORS 4 N-CHANMEL POWER MOSFETs 14LEAD DUAL-IN-LINE QUAD ,— s?0 11 o-4 1 ^ 'is CERAMIC SIDE BRAZED PACKAGE
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S54S2
LH0063
G-622
IRFG1Z0
CHN 617
irfg1ZO
irfg 40
71713
IRFG1Z3
eg-1w
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smd diode S4 64a
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.
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IRFN054
5S452
GD24flSfl
smd diode S4 64a
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RF830
Abstract: No abstract text available
Text: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V
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D01476B
IRF830
RF830
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d773
Abstract: diode sy 710 sy 710 diode
Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN823
d773
diode sy 710
sy 710 diode
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Untitled
Abstract: No abstract text available
Text: im iFFI im SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 0.25 3.5 3.0 V Dss 60V I. *D(cont) 45A W -» i ^DS(on) 0.027Q A CD FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE TT • SMALL FOOTPRINT - EFFICIENT USE OF
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IRF054SM
T0-220SM
300ms,
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Untitled
Abstract: No abstract text available
Text: y U IM IT R O D E UCC1921 UCC2921 UCC3921 Latchable Negative Floating Hot Swap Power Manager • Precision Fault Threshold • Programmable: Average Power Limiting, Linear Current Control, Overcurrent Limit and Fault Time • Fault Output Indication Signal
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UCC1921
UCC2921
UCC3921
UCC3921
UCC3921,
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WO2M
Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode
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IRF330,
IRF331,
IRF332,
IRF333
50V-400V
IRF332
IRF333
WO2M
IRF330
IRF331
LM 7801
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Figure12
Abstract: IRLU014 AN-994 IRLR014
Text: International S Rectifier PD-9.624A IRLR014 IRLU014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Surface Mount IRLR014 Straight Lead (IRLU014) Available in Tape & Reel Logic-Level Gate Drive RDS(on) Specified at Vgs =4V & 5V Fast Switching
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IRLR014
IRLR014)
IRLU014)
lntGIT13tÃ
Figure12
IRLU014
AN-994
IRLR014
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IRFP260
Abstract: No abstract text available
Text: PD-9.755 International frëRj Rectifier IRFP260 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V oss - 200V
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IRFP260
O-247
IRFP260
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SSS7N60
Abstract: 250M SSS7N55
Text: N-CHANNEL POWER MOSFETS SSS7N60/55 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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SSS7N60/55
SSS7N60
SSS7N55
O-220
250M
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Untitled
Abstract: No abstract text available
Text: 1 .II 1 1 1 .¡In 1 1 mu CE P4050A/C EB4050A March 1998 N-Channel Enhancement Mode Field Transistor FEATURES • 55V , 15A, RDS ON =85mQ D @Vgs=10V • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability.
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P4050A/C
B4050A
85itiQ
O-220
O-263
to-263
to-220
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cep4060al
Abstract: No abstract text available
Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.
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85itiQ
O-220
O-263
to-263
to-220
CEP4060ALR/CEB4060ALR
cep4060al
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