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MG250V2YMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A |
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PMCS1123A1QDVGR
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Texas Instruments
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±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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PMCS1126A1BQDVGR
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Texas Instruments
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±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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TMCS1123A1AQDVGR
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Texas Instruments
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±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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TMCS1123C1AQDVGR
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Texas Instruments
|
±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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