TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Abstract: 250V 10A TF 106
Text: ì 6 1 1 5 9 5 0 M I C R O S E M I C O R P / P_ OWER 05 V T M C i TECHNOLOGY J 02E 00454 D T 'IfT '3 3 DElbllSTSD D0004S4 7 T~ PTC 1 0 0 0 0 P — — T— i PTC 10001P Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AMPERES . 400 VOLTS
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D0004S4
10001P
O-247
TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
250V 10A TF 106
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DF184S
Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2010/Nov
DF184S
DF128S
SDF DF141S
DF170S
tf 216 10a 250v
DF240S
E117626
DF141S
DF66S
DF216S
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DF216S
Abstract: DF98S DF280S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2013/Feb
DF216S
DF98S
DF280S
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tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly
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TJ142D
TJ152D
TJ78D
TJ99D
tf 216 10a 250v
DYE*TCO
DF184S
ISO 8015 tolerance
DYE DF84S
ISO 8015
tf 115 250v 15a
DF240S
250V 10A TF 106
thermoresistor
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Untitled
Abstract: No abstract text available
Text: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides
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IRHNJ57234SE
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IRHNJ57234SE
Abstract: smd diode 64A
Text: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides
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IRHNJ57234SE
IRHNJ57234SE
smd diode 64A
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fmh20n50e
Abstract: No abstract text available
Text: FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH20N50E
fmh20n50e
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fmh20n50e
Abstract: No abstract text available
Text: FMH20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH20N50ES
fmh20n50e
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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transistor d333
Abstract: TRANSISTOR BC 384 mercury wetted relay, double contact DT5336 npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v
Text: LUCAS STABILITY ELEK 011. UU164 100W A H LTD öl D n D • — SL.07013 -T - 3 3 - 2 ,7 HIGH V O LTA G E DARLINGTON TR A N SIST O R S 300-500V CO LLEC TO R -EM ITTER V O LTA G E □ □ □ □ im DT4335 DT4336 DT5335 DT5336 ■ LUCB The DT4335/6 and DT5335/6 are NPN double epitaxial devices conforming to
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uu164
G7G13
00-500V
T4335
DT4336
DT5335
DT5336
DT4335/6
DT5335/6
O-3/TO-204.
transistor d333
TRANSISTOR BC 384
mercury wetted relay, double contact
npn darlington 6A 400V
NPN Transistor 10A 400V to3
power darlington 100W
Transistor bc 879
high voltage darlington
Darlington 300v
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merlin gerin fuse
Abstract: IR 2544S MICRO FUSE-LINKS 1608 TYPE HRC fuse gg GEC MGI1252 THERMAL Fuse m20 tf 115 c smd marking 1pn ns 1000 n merlin gerin microtemp g4a01
Text: 2189 Technical portal and online community for Design Engineers - www.element-14.com Fuses & Circuit Breakers Page 10x35mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 10x38mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 14x51mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
10x35mm
10x38mm
14x51mm
22x58mm
5x20mm
5x25mm
35x25
3x32mm
merlin gerin fuse
IR 2544S
MICRO FUSE-LINKS 1608 TYPE
HRC fuse gg GEC
MGI1252
THERMAL Fuse m20 tf 115 c
smd marking 1pn
ns 1000 n merlin gerin
microtemp
g4a01
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fmh23n50
Abstract: fmh*23N50E FMH23N50E FMH23N50ES
Text: FMH23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH23N50ES
fmh23n50
fmh*23N50E
FMH23N50E
FMH23N50ES
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: 2SK3505-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3505-01MR
MOSFET200303
O-220F
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Untitled
Abstract: No abstract text available
Text: 2SK3504-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3504-01
MOSFET200303
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International
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90336F
IRF430
JANTX2N6762
JANTXV2N6762
O-204AA/AE)
MIL-PRF-19500/542]
p252-7105
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IRF4401
Abstract: IRF440
Text: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF440
O-204AA/AE)
parame252-7105
IRF4401
IRF440
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JANTX2N6770
Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International
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90330F
IRF450
JANTX2N6770
JANTXV2N6770
O-204AA/AE)
stabil52-7105
JANTX2N6770
irf4501
mosfet IRF450
IRF450
JANTXV2N6770
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rectifier diode 250V 1.5A
Abstract: IRFF420 JANTX2N6794 JANTXV2N6794 rectifier diode for max 250v 1.5A
Text: PD - 90429C IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A The HEXFET technology is the key to International
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90429C
IRFF420
JANTX2N6794
JANTXV2N6794
MIL-PRF-19500/555
O-205AF)
rectifier diode 250V 1.5A
IRFF420
JANTX2N6794
JANTXV2N6794
rectifier diode for max 250v 1.5A
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IRF 725
Abstract: IRFF430 JANTX2N6802 JANTXV2N6802
Text: PD -90433C IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A The HEXFET technology is the key to International
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-90433C
IRFF430
JANTX2N6802
JANTXV2N6802
MIL-PRF-19500/557
O-205AF)
T252-7105
IRF 725
IRFF430
JANTX2N6802
JANTXV2N6802
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IRF430
Abstract: JANTX2N6762 JANTXV2N6762
Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International
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90336F
IRF430
JANTX2N6762
JANTXV2N6762
O-204AA/AE)
MIL-PRF-19500/542]
an52-7105
IRF430
JANTX2N6762
JANTXV2N6762
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Untitled
Abstract: No abstract text available
Text: PD -90467 IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF460
O-204AA/AE)
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Untitled
Abstract: No abstract text available
Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International
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90330F
IRF450
JANTX2N6770
JANTXV2N6770
O-204AA/AE)
temper252-7105
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MOSFET IRF460
Abstract: IRF460 APPLICATIONS OF IRF460 irf460 switching diode 500v 10A
Text: PD -90467 IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF460
O-204AA/AE)
parameter252-7105
MOSFET IRF460
IRF460
APPLICATIONS OF IRF460
irf460 switching
diode 500v 10A
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