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    250V TRANSISTOR NPN 2A Search Results

    250V TRANSISTOR NPN 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250V2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    250V TRANSISTOR NPN 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE2543

    Abstract: No abstract text available
    Text: NTE2543 Silicon NPN Transistor Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V


    Original     		NTE2543 NTE2543 PDF

    NTE95

    Abstract: No abstract text available
    Text: NTE95 Silicon NPN Transistor High Voltage, High Power Switch Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V


    Original     		NTE95 10-32-UNF-2A NTE95 PDF

    2SD1410

    Abstract: B-35 transistor 300V transistor npn 2a darlington power transistor HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 250V transistor npn 2a NPN Transistor 5V DARLINGTON power darlington npn transistor NPN Darlington 300V 2A transistor npn 2a "switching applications"
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain


    Original     		2SD1410 2SD1410 B-35 transistor 300V transistor npn 2a darlington power transistor HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 250V transistor npn 2a NPN Transistor 5V DARLINGTON power darlington npn transistor NPN Darlington 300V 2A transistor npn 2a "switching applications" PDF

    samsung tv

    Abstract: T337 KSC1520 KSC1983 TO-202 transistor NPN I44A
    Text: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME 0 | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - COLOR TV CHROMA OUTPUT 7 TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		0007S40 KSC1520 80MHz O-202 100/iA, 3K5K10K samsung tv T337 KSC1983 TO-202 transistor NPN I44A PDF

    TSC5302DCH

    Abstract: TSC5302DCP DIODE G14
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH DIODE G14 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH PDF

    diode D07-15

    Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH diode D07-15 diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH TSC53rty PDF

    700VV

    Abstract: TSC5302D halogen ballast 18BSC TSC5302DCH TSC5302DCP diode marking code 540 transistor B 540
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH 700VV TSC5302D halogen ballast 18BSC diode marking code 540 transistor B 540 PDF

    DIODE F10

    Abstract: transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 DIODE F10 transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP PDF

    ELECTRONIC BALLAST 12v

    Abstract: FJP5304D TRANSISTOR hFE-100
    Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		FJP5304D O-220 FJP5304D ELECTRONIC BALLAST 12v TRANSISTOR hFE-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time


    Original     		FJP5304D O-220 FJP5304D PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 HiSiniMOtgS rz 7 ^ 7# SGSF665 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR . HIG H S W IT C H IN G 'SPEED NPN POW ER TRANSISTOR • HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS . 50kHz SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS


    OCR Scan     		SGSF665 100kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings


    Original     		FJB3307D PDF

    12V RELAY 5 PIN DIAGRAM spdt

    Abstract: SP12SELQD SP12SRLQD relay socket lr38486 LR38486 5 pin 12v relay pin drawing diagrams schematic AC inductive proximity sensor inductive proximity sensor transistor schematic AP12SR SP12 PACKAGE TYPE 6
    Text: t ns uc tio od ca Pr ne ifi Li pec S MAXI-AMP System Stand-alone sensor control modules • Versatile, cost-effective sensor control modules: models available for use with most Banner photoelectric sensors • Power supply, photoelectric amplifier CD and CM


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: c2\£.w J. nc. tU TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA. Silicon NPN Power Transistor BUY56 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=160V(Min.) • Low Collector Saturation Voltage:V CE (sat)=1.5V@lc=7A


    Original     		BUY56 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated


    Original     		NTE385 NTE385 PDF

    Untitled

    Abstract: No abstract text available
    Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings


    Original     		FJB3307D PDF

    FJE5304D

    Abstract: No abstract text available
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


    Original     		FJE5304D FJE5304D O-126 PDF

    transistor 12v 1A NPN

    Abstract: fje5
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


    Original     		FJE5304D FJE5304D O-126 transistor 12v 1A NPN fje5 PDF

    darlington NPN 600V 8a transistor

    Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
    Text: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output


    Original     		NTE256 NTE256 darlington NPN 600V 8a transistor npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V PDF

    FJB3307D

    Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
    Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings


    Original     		FJB3307D FJB3307D QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat PDF

    j5304d

    Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


    Original     		FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o PDF