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    256D Search Results

    256D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28HC256DM-12/B Rochester Electronics LLC X28HC256 - EEPROM, 32KX8, 5V, Parallel Visit Rochester Electronics LLC Buy
    54LS256DM Rochester Electronics LLC Replacement for National Semiconductor part number 54LS256DM. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    R4F24256DFPU Renesas Electronics Corporation Microcontrollers with 16-bit High-speed H8S/2600 CPU (Non Promotion) Visit Renesas Electronics Corporation
    R4F24256DWFAU Renesas Electronics Corporation Microcontrollers with 16-bit High-speed H8S/2600 CPU (Non Promotion) Visit Renesas Electronics Corporation
    R4F24256DWFPU Renesas Electronics Corporation Microcontrollers with 16-bit High-speed H8S/2600 CPU (Non Promotion) Visit Renesas Electronics Corporation
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    256D Price and Stock

    STMicroelectronics M24256-DFMC6TG

    IC EEPROM 256KBIT I2C 8UFDFPN
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    DigiKey M24256-DFMC6TG Reel 70,000 5,000
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    Avnet Americas M24256-DFMC6TG Reel 5,000 10 Weeks 5,000
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    Mouser Electronics M24256-DFMC6TG 107,616
    • 1 $0.56
    • 10 $0.472
    • 100 $0.434
    • 1000 $0.404
    • 10000 $0.291
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    Newark M24256-DFMC6TG Cut Tape 11,333 1
    • 1 $0.58
    • 10 $0.535
    • 100 $0.474
    • 1000 $0.456
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    Ameya Holding Limited M24256-DFMC6TG 3,623
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    Avnet Silica M24256-DFMC6TG 60,000 11 Weeks 5,000
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    EBV Elektronik M24256-DFMC6TG 11 Weeks 5,000
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    Win Source Electronics M24256-DFMC6TG 9,973
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    STMicroelectronics M95256-DFMN6TP

    IC EEPROM 256KBIT SPI 8SOIC
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    DigiKey M95256-DFMN6TP Cut Tape 10,288 1
    • 1 $0.81
    • 10 $0.723
    • 100 $0.6417
    • 1000 $0.56943
    • 10000 $0.56943
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    M95256-DFMN6TP Digi-Reel 10,288 1
    • 1 $0.81
    • 10 $0.723
    • 100 $0.6417
    • 1000 $0.56943
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    M95256-DFMN6TP Reel 7,500 2,500
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    Ameya Holding Limited M95256-DFMN6TP 2,500
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    Avnet Silica M95256-DFMN6TP 2,500 9 Weeks 2,500
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    EBV Elektronik M95256-DFMN6TP 5,000 9 Weeks 2,500
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    STMicroelectronics M95256-DRDW3TP-K

    IC EEPROM 256KBIT SPI 8TSSOP
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    DigiKey M95256-DRDW3TP-K Reel 8,000 4,000
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    STMicroelectronics M24256-DRDW8TP-K

    IC EEPROM 256KBIT I2C 8TSSOP
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    DigiKey M24256-DRDW8TP-K Digi-Reel 6,743 1
    • 1 $0.66
    • 10 $0.581
    • 100 $0.5158
    • 1000 $0.45769
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    M24256-DRDW8TP-K Cut Tape 6,743 1
    • 1 $0.66
    • 10 $0.581
    • 100 $0.5158
    • 1000 $0.45769
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    M24256-DRDW8TP-K Reel 4,000 4,000
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    STMicroelectronics M95256-DFCS6TP-K

    IC EEPROM 256KBIT SPI 8WLCSP
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    DigiKey M95256-DFCS6TP-K Reel 5,000 2,500
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    256D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    256DCN2R7Q Illinois Capacitor Capacitors - Electric Double Layer Capacitors (EDLC), Supercapacitors - CAP 25F -10%, +30% 2.7V T/H Original PDF

    256D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with


    Original
    PDF G9203-256D G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: B1201, KMIR1013E06

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in


    Original
    PDF G9494-256D/-512D B1201, KMIR1014E08

    74HC244

    Abstract: G9494-256D G9494-512D INP35 Ch252
    Text: IMAGE SENSOR InGaAsリニアイメージセンサ G9494-256D/-512D 高速データレートの近赤外イメージセンサ 0.9~1.7 µm オンライン異物検査装置用の検出器として設計された近赤外/高速リニアイメージセンサです。各画素はパターン認識シ


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    PDF G9494-256D/-512D G9494-256D: G9494-512D: 435-85581126-1TEL 434-3311FAX KMIR1014J05 74HC244 G9494-256D G9494-512D INP35 Ch252

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors


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    PDF G11135-256DD, G11135-512DE G11135 KMIR1018E09

    Untitled

    Abstract: No abstract text available
    Text: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +70°C Radial lead Supercapacitors Part Number: 256DLR2R3K This part is RoHS compliant Electrical Specifications Capacitance: 25F Tolerance: -10 %, +10 % ESR: 60 milliOhms at 120 Hz and 20°C


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    PDF 256DLR2R3K

    capacitive readout circuit G9494

    Abstract: G9494-256D G9494-512D 74HC244 74HC244 shift register
    Text: IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor 0.9 to 1.7 µm with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These


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    PDF G9494-256D/-512D SE-171 KMIR1014E03 capacitive readout circuit G9494 G9494-256D G9494-512D 74HC244 74HC244 shift register

    Photodiode Array 32 element

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


    Original
    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02 Photodiode Array 32 element

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor 0.9 to 1.7 µm with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These


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    PDF G9494-256D/-512D G9494-256D: G9494-512D: SE-171 KMIR1014E02

    G9204

    Abstract: G9203-256D G9204-512D
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: SE-171 KMIR1013E02 G9204

    transistor KSP 56

    Abstract: G8053-512D G8052-256D high frequency linear cmos IMAGE SENSOR charge amplifier array
    Text: 2002. 3/19, K11-I5G004 InGaAs Linear Image Sensor G8052-256D, G8053-512D FEATURES ● Low cost ● 25um pitch 512ch, 50um pitch 256ch CMOS readout ● Low dark current ● Room temperature operation ● Cf selectable 10pF & 1pF APPLICATIONS DWDM monitor with Grating


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    PDF K11-I5G004 G8052-256D, G8053-512D 512ch, 256ch transistor KSP 56 G8053-512D G8052-256D high frequency linear cmos IMAGE SENSOR charge amplifier array

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with


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    PDF G9203-256D G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: KMIR1013E03

    256X64

    Abstract: 19045
    Text: EDM25664A 1. 0 * * * * 1/64 Duty, 1/9 Bias 256Dots x 64 Dots Features Display Mode: Reflective/Transflective/Transmissive and Positive Type STN Input Data: 8-Bits Parallel Data Input from a MPU Assembly: SMT Backlight: Optional 2. 0 External Dimensions


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    PDF EDM25664A 256Dots 256X643 256X64 19045

    Untitled

    Abstract: No abstract text available
    Text: InGaAsリニアイメージセンサ G9203-256D G9204-512D 近赤外域用イメージセンサ 0.9~1.7 m トランジスタから成るチャージアンプアレイシフトレジスタ、タイミング発生器などがInGaAsフォトダイオードアレイ


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    PDF G9203-256D G9204-512D G9203-256Dã G9204-512Dã KMIR1013J07

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in


    Original
    PDF G9494-256D/-512D KMIR1014E05

    photodiode linear array 256

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors


    Original
    PDF G11135-256DD, G11135-512DE G11135 KMIR1018E10 photodiode linear array 256

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor 0.9 to 1.7 µm with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These


    Original
    PDF G9494-256D/-512D SE-171 KMIR1014E02

    Untitled

    Abstract: No abstract text available
    Text: InGaAsリニアイメージセンサ G9494-256D/-512D 高速データレートの近赤外イメージセンサ 0.9 ~ 1.7 m オンライン異物検査装置用の検出器として設計された近赤外/高速リニアイメージセンサです。各画素はパターン認識


    Original
    PDF G9494-256D/-512D G9494-256D: KMIR1014J09

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors


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    PDF G11135-256DD, G11135-512DE G11135 operatio53 B1201, KMIR1018E11

    CSQ-255D

    Abstract: CSQ-256D 255D
    Text: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.25 inch 6.2mm Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit TRIAD DIGIT DISPLAY CSQ-256D/255D Model no. § CSQ-256D/255D Super Bright Red


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    PDF CSQ-256D/255D CSQ-256D/255D CSQ-256D CSQ-255D 255D

    Photodiode Array 32 element

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E01 Photodiode Array 32 element

    G9204-512D

    Abstract: G9203-256D
    Text: NEW IMAGE SENSOR InGaAsリニアイメージセンサ G9203-256D, G9204-512D 近赤外域用イメージセンサ 0.9~1.7 µm G9203-256D, トラ


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    PDF G9203-256D, G9204-512D G9204-512DInGaAsCMOS G9203-256D: G9204-512D: G9203-256D KMIRA0013JB G9204-512D G9203-256D

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 256DCN2R7Q HIGH PULSE POWER, EXTENDS BATTERY LIFE PARTS ARE ROHS COMPLIANT FEATURES APPLICATIONS Radial lead, high capacitance. High power density Battery backup. Battery alternative. LED displays. Mechanical actuators ELECTRICAL SPECIFICATIONS


    OCR Scan
    PDF 256DCN2R7Q

    Untitled

    Abstract: No abstract text available
    Text: 256D-70 256D-85 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION T he T C 57H 256D is a 3 2 ,7 6 8 w o rd x 8 b it CMOS u ltra v io le t lig h t e ra s a b le a n d e le c tric a lly p ro g ra m m a b le re a d o n ly m em o ry . F o r re a d o p e ra tio n , th e T C 67H 280D ’s a c c e ss tim e


    OCR Scan
    PDF TC57H256D-70 TC57H256D-85 TC57H256D 50mA/14 TC57H256D. TC57H256D-- WDIP28-G-600A