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    256K-BYTE SRAM Search Results

    256K-BYTE SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics LLC CY7C167A - CMOS SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    HM4-6504B-9 Rochester Electronics LLC HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC 2114A - 1K X 4 SRAM Visit Rochester Electronics LLC Buy

    256K-BYTE SRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BR2325

    Abstract: No abstract text available
    Text: 1. VARIATION Part Number LWB065ES* LWB129ES* LWB257ES* LWB513ES* LWB101 E S * LWB201 E S * Memory Size 6 4K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128KX 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit


    OCR Scan     		LWB065ES* LWB129ES* LWB257ES* LWB513ES* LWB101 LWB201 128KX BR2325 200nS PDF

    PCMCIA CARD, Static Memory, write protect switch

    Abstract: PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery
    Text: PCMCIA/JEIDA LOW VOLTAGE STATIC RAM 1. VARIATION Memory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128K x 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit MIX MIX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS


    OCR Scan     		BR2325 200nS PCMCIA CARD, Static Memory, write protect switch PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880E18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS880E18/32/36BT-xxxV 100-Pin 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS880F18/32/36BT-xxxV 100-Pin 100-lead GS880F18/32/36BT-xxxV 184-bit 608bit x32ogy PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable


    Original     		GS880F18/32/36BT-4 GS880F18/32/36BT 184-bit 608-bit PDF

    MN102H730FGT

    Abstract: MN102H73G MN102H73K MN102HF73G
    Text: MN102H730FGT, MN102H73G, MN102H73K MN102H730FGT Type Internal ROM type ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73G External MN102H73K MN102HF73G Mask ROM 128K  10K TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K


    Original     		MN102H730FGT, MN102H73G, MN102H73K MN102H730FGT MN102H73G MN102HF73G TQFP128-P-1414B MN102HF73K TQFP128-P-1414A MN102H730FGT MN102H73G MN102H73K MN102HF73G PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable


    Original     		GS880F18/32/36BT-4 100-Pin 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: GS88118B T/D /GS88132B(T/D)/GS88136B(T/D) 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable


    Original     		GS88118B /GS88132B /GS88136B 100-pin 165-bump 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: PCMCIA/JEIDA STATIC RAM 1. VARIATION Part N um ber A W B 0 6 5 E S * A W B 1 2 9 E S * A W B 2 5 7 E S * A W B 5 1 3 E S * AWB101 E S * AW B201 E S * D escription M em ory Size 64K 128K 256K 5 1 2K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE 32K 64K 128K 256K


    OCR Scan     		AWB101 BR2325 PDF

    Untitled

    Abstract: No abstract text available
    Text: M em ory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE D escription 32K 64K 128K 256K 512K 1M X X X X X X 16 16 16 16 16 16 bit bit bit bit bit bit MIX M IX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS CMOS W ID E W ID E W ID E W ID E W IDE W ID E


    OCR Scan     		200nS BR2325 PDF

    GENERAL ELECTRIC OCR 125 KW

    Abstract: No abstract text available
    Text: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K  10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A


    Original     		MN102H73 MN102H730FGT TQFP128-P-1414B MN102H73G MN102H73K TQFP128-P-1414A MN102HF73G MN102HF73K TQFP128-P-1414B GENERAL ELECTRIC OCR 125 KW PDF

    MN102HF73K

    Abstract: MN102HF73G MN102H73 MN102H730FGT MN102H73G MN102H73K TQFP128-P
    Text: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K  10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A


    Original     		MN102H73 MN102H730FGT MN102H73G MN102HF73G MN102HF73K TQFP128-P-1414B MN102H73K TQFP128-P-1414A MN102HF73K MN102HF73G MN102H730FGT MN102H73G MN102H73K TQFP128-P PDF

    STMc2

    Abstract: i486
    Text: Æ 7 SGS-THOMSON ^7# RfflD g^(Q [E[Li(gïï^(S)iD(gi STCM128 STCM256 128K/256K BYTE L2 CACHE RAM MODULE WITH TAG PRODUCT CONCEPT • 128K BYTE and 256K BYTE LEVEL-2 i486 CACHE MODULES ■ SUPPORTS BURST CACHE LINE FILLS; FAST ACCESS TIME 15ns, TAG ACCESS


    OCR Scan     		STCM128 STCM256 128K/256K STCM256 STMC128, STMC256 STMc2 i486 PDF

    Untitled

    Abstract: No abstract text available
    Text: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM Functional Description n fo rN Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS88037BT-333/300/250/200 100-Pin 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM Functional Description n fo rN Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS88037BT-333/300/250/200 GS88037BT 184-bit 608-bit PDF

    gun sound effects generator

    Abstract: CPU 1825 sunplus program rom
    Text: SPF20A 63K MUSIC SYNTHESIZER GENERAL DESCRIPTION The SPF20A is a fully CMOS integrated circuit. It uses advanced design and process technology to combine an 8-bit RISC processor, a 4-channel music synthesizer, 256K-byte program ROM, 160-byte working SRAM,


    Original     		SPF20A SPF20A 256K-byte 160-byte 378K-bit gun sound effects generator CPU 1825 sunplus program rom PDF

    Untitled

    Abstract: No abstract text available
    Text: M68AW256D 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT


    Original     		M68AW256D TSOP44 TFBGA48 PDF

    IS61LPS25632A

    Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A PK13197LQ 5M-1982. IS61LPS25632A IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 100-Pin 119-bC 5M-1982. PK13197LQ PDF

    6C69

    Abstract: No abstract text available
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 100-Pin 119-bC 5M-1982. PK13197LQ 6C69 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A PDF

    IS61LPS25632A

    Abstract: IS61LPS25636A
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 100-Pin 119-bE IS61LPS25632A IS61LPS25636A PDF