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    256KB STATIC RAM Search Results

    256KB STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7AFS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    256KB STATIC RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM36F6/D SEMICONDUCTOR TECHNICAL DATA Advance Information Freescale Semiconductor, Inc. 256KB and 512KB Synchronous Fast Static RAM Module The MCM36F6 256KB is configured as 64K x 36 bits and the MCM36F7


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    MCM36F6/D 256KB 512KB MCM36F6 256KB) MCM36F7 512KB) MCM36F6â PDF

    Untitled

    Abstract: No abstract text available
    Text: SM332S4AON5XXXX January 1996 Rev 1A SMART Modular Technologies SM332S4AON5XXXX 256KB 64Kx32 CMOS SRAM Module General Description Features The SM332S4AON5XXXX is a high performance, 256KB static RAM module organized as 64K words by 32 bits, in a 64-pin, SIMM package. The module utilizes


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    SM332S4AON5XXXX 256KB 64Kx32) SM332S4AON5XXXX 256KB 64-pin, 64Kx4 15/20/25ns) PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1; 1/05 DS2030W 3.3V Single-Piece 256kb Nonvolatile SRAM Features The DS2030W is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    DS2030W 256kb 256-ball DS2030W PDF

    DS1230W

    Abstract: DS2030L DS2030L-100 SN74AC573
    Text: Rev 3; 10/06 DS2030L 3.3V Single-Piece 256kb Nonvolatile SRAM Features The DS2030L is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    DS2030L 256kb 256kb 256-ball DS2030L DS1230W DS2030L-100 SN74AC573 PDF

    DS1230W

    Abstract: DS2030W DS2030W-100 SN74AC573
    Text: Rev 1; 1/05 DS2030W 3.3V Single-Piece 256kb Nonvolatile SRAM Features The DS2030W is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    DS2030W 256kb 256kb 256-ball DS1230W DS2030W-100 SN74AC573 PDF

    DS2030AB

    Abstract: DS2030AB-100 DS2030AB-70 DS2030Y DS2030Y-100 DS2030Y-70 SN74AC573 DS1230
    Text: Rev 2; 1/05 DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Features The DS2030 is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a


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    DS2030Y/AB 256kb DS2030 256kb 256-ball DS2030AB DS2030AB-100 DS2030AB-70 DS2030Y DS2030Y-100 DS2030Y-70 SN74AC573 DS1230 PDF

    microprocessor 8 bits

    Abstract: DS1230W DS2030W DS2030W-100 SN74AC573
    Text: Rev 3; 10/06 DS2030W 3.3V Single-Piece 256kb Nonvolatile SRAM Features The DS2030W is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    DS2030W 256kb 256kb 256-ball DS2030W microprocessor 8 bits DS1230W DS2030W-100 SN74AC573 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 2; 1/05 DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Features The DS2030 is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a


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    DS2030Y/AB 256kb DS2030 256kb 256-ball PDF

    DS1230W

    Abstract: DS2030L DS2030L-100 SN74AC573
    Text: Rev 1; 4/05 DS2030L 3.3V Single-Piece 256kb Nonvolatile SRAM Features The DS2030L is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    DS2030L 256kb 256kb 256-ball DS1230W DS2030L-100 SN74AC573 PDF

    DS2030AB

    Abstract: DS2030AB-100 DS2030AB-70 DS2030Y DS2030Y-100 DS2030Y-70 SN74AC573
    Text: Rev 4; 9/06 DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Features The DS2030 is a 256kb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a


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    DS2030Y/AB 256kb DS2030 256kb 256-ball DS2030 DS2030Y/AB DS2030AB DS2030AB-100 DS2030AB-70 DS2030Y DS2030Y-100 DS2030Y-70 SN74AC573 PDF

    Untitled

    Abstract: No abstract text available
    Text: iw VITELIC ' PRELIMINARY V63C429 16Kx 16 BIT CACHE CMOS STATIC RAM Features Description m Designed for 64KB, 128KB and 256KB Cache The V63C429 is a high performance, full CMOS, 16K x 16, 256KB cache memory. This highly inte­ grated solution is specifically designed to provide


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    V63C429 128KB 256KB 32-bit 128KB, PDF

    MCM36F6

    Abstract: MCM36F7
    Text: MOTOROLA Order this document by MCM36F6/D SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB Synchronous Fast Static RAM Module The MCM36F6 256KB is configured as 64K x 36 bits and the MCM36F7 (512KB) is configured as 128K x 36 bits. Both are packaged in a 144–pin dual–


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    MCM36F6/D 256KB 512KB MCM36F6 256KB) MCM36F7 512KB) MCM36F6 MCM36F7 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI, EDI8F6432C 32Kx64 SRAM Module EICCTROWC M StGN & NC. 32Kx64 Static RAM High SpeedCMOS Cache Memory Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


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    EDI8F6432C 32Kx64 256KB EDI8F6432C 32Kx8 66MHz EDI8F6432C15MDC I8F6432C20MDC PDF

    Untitled

    Abstract: No abstract text available
    Text: PDM4M6202 PDM4M6203 PARADIGM COASt Compliant 256KB and 512KB Second Level Cache Modules with 5V 8-bit Tag Field for Intel Pentium CPUs Features Description □ Available in 256KB an d 512KB pipelined burst configurations. The PDM4M6202 an d PDM4M6203 are high-perform ance CMOS static RAM m odules. They are designed


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    PDM4M6202 PDM4M6203 256KB 512KB 512KB PDM4M6202 PDM4M6203 82340FX/HX PDF

    Untitled

    Abstract: No abstract text available
    Text: _ PRELIMINARY PARADIGM* PDM4M6222 PDM4M6223 COASt Compliant 256KB and 512KB Second Level Cache Modules with 3.3V 11-bit Tag Field for Intel Pentium CPUs Features Description □ Available in 256KB and 512KB pipelined burst configurations. The P D M 4M 6222 and P D M 4M 6223 are highperformance CMOS static RAM modules. They are


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    PDM4M6222 PDM4M6223 256KB 512KB 11-bit 512KB PDM4M6222 PDF

    TME 87

    Abstract: 1ZD12 tme 126 30 oc9 002
    Text: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


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    256KB 66MHz CELP2X80CS3Z48 EDI8F6432C 32Kx64 EDI8F6432C EDI8F6432C15MDC EDI8F6432C20MDC TME 87 1ZD12 tme 126 30 oc9 002 PDF

    DH23

    Abstract: dh14 71V432 DH15 IDT7MPV6253 "32K x 32" SRAM burndy terminal module block DH0 165 32k sram 20 pin card
    Text: 256KB AND 512KB SECONDARY CACHE MODULES FOR THE PowerPC IDT7MPV6253 IDT7MPV6255/56 Integrated Device Technology, Inc. x 8 asynchronous static RAMs and the IDT7MPV6255/56 use IDT’s 71V432 32K x 32 pipelined synchronous burst static RAMs in plastic surface mount packages mounted on a


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    256KB 512KB IDT7MPV6253 IDT7MPV6255/56 IDT7MPV6255/56 71V432 IDT7MPV6256 7MPV6253 7MPV6255 DH23 dh14 DH15 IDT7MPV6253 "32K x 32" SRAM burndy terminal module block DH0 165 32k sram 20 pin card PDF

    Untitled

    Abstract: No abstract text available
    Text: PARADIGM PDM4M6224 PDM4M6225 COASt Compliant 256KB and 512KB Second Level Cache Modules with 5V 11-bit Tag Field for Intel Pentium CPUs Features Description □ Available in 256KB an d 512KB pipelined burst configurations. T he PD M 4M 6224 a n d PD M 4M 6225 are h ig h perform ance CMOS static RAM m odules. They are


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    PDM4M6224 PDM4M6225 256KB 512KB 11-bit 512KB PDF

    32Kx64

    Abstract: No abstract text available
    Text: EDI8F6432C 32Kx64 SRAM Module 32Kx64 Static RAM High Speed CMOS Cache Memory Module Features 256KB Secondary Cache Module • For use with Intel Pentium Based Systems • Individual Byte Write Capability • Operates with External CPU Speeds of 33,50, and 66MHz


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    EDI8F6432C 32Kx64 256KB 66MHz CELP2X80CS3Z48 EDI8F6432C EDI8G6432C15MMC EDI8G6432C20MMC PDF

    ZD 103

    Abstract: burndy sms ZD 103 ma CZ 142 tme 126 dc block CZ-130 ZD 22 508-B36-4850 32Kx64 32kxS
    Text: ^EDI, EDI8F6432C 32Kx64 SRAM Module EICCTROWC MStGN&NC. 32Kx64 Static RAM High SpeedCMOS Cache Memory Module Features 256KB Secondary Cache Module • For use with Intel Pentium Based Systems • Individual Byte Write Capability • Operates with External CPU Speeds


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    EDI8F6432C 32KxS4 256KB 66MHz CELP2X80CS3Z48 32Kx64 EDI8F6432C edi8f6432c15mdc edi8f6432c20mdc ZD 103 burndy sms ZD 103 ma CZ 142 tme 126 dc block CZ-130 ZD 22 508-B36-4850 32kxS PDF

    STK15C88-SF25I

    Abstract: tps 1806 14C88 16C88 STK15C88
    Text: STK15C88 32Kx8 PowerStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Time The Simtek STK15C88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


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    STK15C88 32Kx8 STK15C88 256Kb ML0016 STK15C88-SF25I tps 1806 14C88 16C88 PDF

    16C88

    Abstract: simtek D 14c88 MA0002 sop28 14C88 STK15C88 tube brown cc pf
    Text: STK15C88 32Kx8 PowerStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Time The Simtek STK15C88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


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    STK15C88 32Kx8 STK15C88 256Kb ML0016 16C88 simtek D 14c88 MA0002 sop28 14C88 tube brown cc pf PDF

    303F

    Abstract: STK11C88
    Text: STK11C88 32Kx8 SoftStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Time • Unlimited Read/Write Endurance • Pin Compatible with Industry Standard SRAMs • Software-initiated STORE and RECALL The Simtek STK11C88 is a 256Kb fast static RAM


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    STK11C88 32Kx8 STK11C88 256Kb ML0012 303F PDF

    arm gps

    Abstract: GPS interface WITH ARM Stmicroelectronics gps ARM7TDMI communication peripherals gps to microcontroller GPS chip UART gps STA2051GO TQFP64 egnos waas gps module
    Text: One-chip GPS baseband with embedded Flash STMicroelectronics' STA2051GO is a System-on-Chip device implementing full GPS baseband functionality. It combines an ARM7TDMI 32-bit microcontroller, a 256KB on-board Flash memory and a static RAM. System and GPS features


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    STA2051GO 32-bit 256KB 16/32-bit 32MHz) RTCA-SC159/WAAS/EGNOS 256KB FLSTA2051GO1105 arm gps GPS interface WITH ARM Stmicroelectronics gps ARM7TDMI communication peripherals gps to microcontroller GPS chip UART gps TQFP64 egnos waas gps module PDF