EDI81256C35QI
Abstract: No abstract text available
Text: EDI81256C 256Kx1 Static Ram 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no clocks or refreshing for operation.
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
01581USA
EDI81256C35QI
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EDI88128CS
Abstract: No abstract text available
Text: EDI81256C HI-RELIABILITY PRODUCT 256Kx1 High Speed Monolithic SRAM CMOS FEATURES • 128Kx8 bit CMOS Static The EDI88128CS is a high speed, high performance, megabit density Monolithic CMOS Static RAM organized as 128Kx8. ■ Random Access Memory • Fast Access Times of 35, 45, 55ns
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EDI81256C
256Kx1
128Kx8
EDI88128CS
128Kx8.
128Kx8
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WD\ EDI81256C 256Kx1 Static Ram ELECTRONIC DESIGNS, INC. 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1. Random Access Memory Fully asynchronous, the EDI81256C requires no clocks or
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EDI81256C
256Kx1
EDI81256C
256Kx1.
I81256LP
7/96ECO
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EDI81256C35QM
Abstract: No abstract text available
Text: moi, E D Ì8 1 2 5 6 C 256Kx1 Static Ram ELÉCTRONC DOfâNS. HG 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1. Random Access Memory
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256Kx1
EDI81256C
256Kx1.
EDI81256LP
MIL-PRF38535.
EDI812S6C
EDI81256C35QM
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Untitled
Abstract: No abstract text available
Text: ^E D I _ EDI81256C Electronic Designs Inc« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The ED181256C is a 262,144 bit high performance, tow 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1.
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EDI81256C
256Kx1
ED181256C
256Kx1.
EDI81256C
EDI81256LP,
EDI81256C55LB
EDI81256C35FB
EDI81256C45FB
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p3545
Abstract: No abstract text available
Text: EDI81256C/P35/45/55 m o \ High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/P is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. It 256Kx1 bit CMOS Static Random Access Memory
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EDI81256C/P35/45/55
256Kx1
EDI81256C/P
256Kx1.
MIL-STD-883C,
EDI81256PATA
181256C/P35/45/5S
EDI81256P
p3545
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256kx1
Abstract: EDI81256C45QB EDI81256C45LB EDI81256C55QB EDI81256C
Text: ^EDI _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
Q-74Q
EDI81256C45QB
EDI81256C45LB
EDI81256C55QB
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256Kx1 bit
Abstract: No abstract text available
Text: moi _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
EDI81256LP45QB
EDI81256LP55QB
256Kx1 bit
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uln buffer
Abstract: si1084
Text: ^EDI EDI81257CB Electronic Design» inc. High Speed 256K Monolithic SRAM OiF@M/OTD[N] 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 256Kx1 bit CMOS Static
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EDI81257CB
256Kx1
EDI81257CB
MIL-STD-883,
uln buffer
si1084
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI81257CA Electronic Design» Ino High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CA is a 262,144 bit high speed CMOS Static RAM organized as 256Kx1. Access times as fast as 25ns are available, with typical power consumption of
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EDI81257CA
256Kx1
EDI81257CA
256Kx1.
400mW.
24ram
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: EDI81256C/P35/45/55 W D\ High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/P is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. It is available in Standard C and Low Power (P) versions.
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EDI81256C/P35/45/55
256Kx1
EDI81256C/P
256Kx1.
MILSTD-883C,
EDI81256P
Pin45/5S
EDI81256P
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Untitled
Abstract: No abstract text available
Text: ^ED I EDI81256C Electronic D tilg n i Ine« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power C M O S Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no clocks
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
EDI81256C35QB
EDI81256C45QB
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI81256CA/LPA/PA Electronic D« cign i Inc. High Speed 256K Monolithic SRAM G ^ ilO iO lM O T 256Kx1 Static RAM CATOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per formance, low power CMOS Static RAM organized as 256Kx1.
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EDI81256CA/LPA/PA
256Kx1
EDI81256CA/LPA/PA
256Kx1.
ED181256CA
EDI81256CA
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EDI81257CA
Abstract: A10q
Text: ^EDI EDI81257CA E lectron ic D *iig n » tnei High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CA is a 262,144 bit high speed CMOS Static RAM organized as 256Kx1. Access times as fast as 25ns are available, with typical power consumption of
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EDI81257CA
256Kx1
EDI81257CA
256Kx1.
EDIB1257CA
A10q
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Untitled
Abstract: No abstract text available
Text: 23EDI L Electronic D *lg n * EDI81256C/LP/P High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/LP/P is a 262,144bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, 1he EDI81256C/LP/P requires no
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23EDI
EDI81256C/LP/P
256Kx1
EDI81256C/LP/P
144bit
256Kx1.
MIL-STD-883,
EDI81256C
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A14-A6
Abstract: No abstract text available
Text: ELECTRONIC D E S I G N S INC 3QE D • 323G114 OQQQSÖS T ■ EDI81256C/LP/P _ ß«olronle Dtilgnt Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS High Speed Monolithic , Features The EDI81256C/LP/P is a262,144bithighperformance, low power CMOS Static RAM organized as 256Kx1.
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323G114
EDI81256C/LP/P
256Kx1
EDI81256C/LP/P
144bithigh
256Kx1.
MIL-STD-883,
EDI81256CA
A14-A6
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Untitled
Abstract: No abstract text available
Text: ^ EDI EDI8M16256C Electronic Designs Inc« High Speed 4 Megabit SRAM Module •UiOi 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of sixteen 16 256Kx1 Static
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EDI8M16256C
256Kx16
EDI8M16256C
4096K-bit
256Kx1
256Kx4
512Kx8
1024Kx4
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256Kx4 SRAM
Abstract: EDI8M4257C
Text: mD\ EDI8M4257C Electronic Designs Inc. High Speed Megabit SRAM Module 256Kx4 SRAM CMOS, High Speed Module Features The EDI8M4257C is a Megabit 256Kx4-bit High Speed Static RAM Module with four bi-directional input/ output lines. The module is constructed of four 256Kx1
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EDI8M4257C
256Kx4
EDI8M4257C
256Kx4-bit)
256Kx1
181256C
256Kx4 SRAM
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HY53C256
Abstract: HY53C256LS
Text: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C256
256Kx1-bit
300mil
16pin
330mil
18pin
standbY556)
HY53C256LS
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256kx1
Abstract: 22A16 EDI81257CB A710C 256Kx1 bit A34C
Text: ^EDI EDI81257CB Electronic Design» Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL
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EDI81257CB
256Kx1
EDI81257CB
MIL-STD-883,
A0VCCA17
A0-A17
22A16
A710C
256Kx1 bit
A34C
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Untitled
Abstract: No abstract text available
Text: V Dense-Pac Microsystems. Inc. ^ 256KX1/128KX DPS166167 MOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The D PS166167 is a 256K X 1 or 128KX2 bit Static Random Access Memory SRAM fabricated using sixteen 16KX1 C M O S SRAMs. The memory utilizes
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256KX1/128KX
DPS166167
DPS166167
128KX2
16KX1
30A002-07
S166167
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Untitled
Abstract: No abstract text available
Text: ^ElectroniEcDMiDpisInc*I EDI8M16256C High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of sixteen 16 256Kx1 Static RAMs in leadless chip carriers surface-mounted
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256Kx16
EDI8M16256C
4096K-bit
256Kx1
256Kx4
256Kx16,
512Kx8
1024Kx4
00aA1a
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302AJ
Abstract: 256KX16
Text: • ^ED I EDI8M16256C ELECTRONIC DESIGNS INC. High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of sixteen 16 256Kx1 Static RAMs in leadless chip carriers surface-mounted
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EDI8M16256C
256KX16
EDI8M16256C
4096K-bit
256Kx1
256Kx4
256Kx16,
512Kx8
1024Kx4
302AJ
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