256x16* STATIC RAM
Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
Text: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM
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T-46-23-20
AK5216128WV
128Kx
16/256x16
AK5216128
33MHz.
128Kx16bit
256x16
AK5216128WV-10
256x16* STATIC RAM
c28w
Video RAM
SIO12
AK5216128WV-10
AK5216128WV-12
AK5216128WV-80
SIo-12
BY164
48aa50
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Untitled
Abstract: No abstract text available
Text: ÄPLESSEY S e m ic o n d u c to rs . JULY 1989 PRODUCT BRIEF DSPA60000 CONFIGURABLE DSP ARRAY The internal resources provided by the DSPA60000 allow complex DSP algorithms to be integrated within one device. High performance RAM and multiplier/accumulators are
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DSPA60000
DSPA60000
40MHz
bandw74754
PS2338
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video ram
Abstract: 256x16* STATIC RAM AK5216128WV-12 SIO15 dual port video ram
Text: I AK5216128WV 128KX 16/256x16 Dual Port Video Ram MICROCIRCUIT CORPORATION DESCRIPTIONS The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx 16 DRAM Port and a 256 x 16 Serial Read/Write Port. The Serial Read/Write Ports are connected to an internal 2K-bit
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AK5216128
128Kx
33MHz.
AK5216128WV
16/256x16
128Kx16bit
AK5216128WV-80
800mW
AK5216128WV-10
video ram
256x16* STATIC RAM
AK5216128WV-12
SIO15
dual port video ram
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Untitled
Abstract: No abstract text available
Text: HM62W1664HJP-35 1/3 IL08 * C-MOS 2M(65,536x16)-BIT STATIC RAM -TOP VIEW- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 V DD (+3.3V) GND GND V DD (+3.3V) NC NC NC 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 (V PIN
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HM62W1664HJP-35
536x16
256X16
I/O16
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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256x16* STATIC RAM
Abstract: No abstract text available
Text: O K I Semiconductor MSM54V16272 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM54
V16272
144-Word
16-Bit
MSM54V16272
512-word
256x16* STATIC RAM
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QPSK using xilinx
Abstract: cable tv using internet block Diagram ofdm modem chip encoder OFDM BY XILINX satellite modem FPGA PQ208 pb sram 256x16* STATIC RAM "Western Digital" pci standards Tv set top BOX Diagram
Text: Spartan-II FPGAs in Set-Top Boxes - Customer Tutorial April 2000 File Number Here Agenda Introduction Market Overview Spartan-II Set-Top Box Solutions Programmable ASSP Summary Xilinx at Work in Hot New Technologies ® www.xilinx.com Overview Xilinx - The Industry Leader in FPGAs/CPLDs
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Untitled
Abstract: No abstract text available
Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only
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KM616V1002B/BL,
KM616V1002BI/BLI
KM616V1002B/BL
200mA
195mA
190mA
KM616V1002BJ
44-SOJ-4GO
KM616V1002BT
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MK48T87B24
Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W
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M27C64A-15F1
M27C64A-20F1
M27C64A-25F1
M27C64A-30F1
M27C64A-20F6
M27C64A-25F6
M27C64A-30F6
ST16601
ST16F48
ST16SF48
MK48T87B24
ST24C02CB1
MK48T18B15
M48Z32Y-100PC1
M2764AF1
MK48Z02B-20
MKI48Z12B15
ST24C01CB1
MK48Z02B-25
ST24C16CM1TR
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KM6161002B
Abstract: No abstract text available
Text: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM6161002B,
KM6161002BI
64Kx16
44-TSOP2-400F
KM6161002B
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ae5t
Abstract: j4213
Text: KM6161002B, KM6161002BI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B- 8 : 200mA(Max.) KM6161002B -1 0 : 195mA(Max.)
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KM6161002B,
KM6161002BI
KM6161002B-
200mA
KM6161002B
195mA
KM6161002BJ
44-SOJ-400
KM6161002BT
ae5t
j4213
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Untitled
Abstract: No abstract text available
Text: KM6164002, KM6164002E, KM6164002I CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM6164002,
KM6164002E,
KM6164002I
64Kx16
KM6164002I
KM6164002E
44-SOJ-400
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256x16 eprom
Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1
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ET9400
EF6801/04/05
ISB12000
ISB18000
MKI48Z18
PHDIP28
MK48Z30,
256x16 eprom
GS-2I5-D12
GS-D250M
GS-2I12-9
512X8 from 128x8 ram
L293D shield
gs-2i5
PHDIP24
ESM1602B
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KM616U4110C
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616U4110C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. History 0.0 0.01 Draft Date Initial draft Errata correction Remark July 4, 1998 Preliminary
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KM616U4110C
256Kx16
48-CSP
25/Typ.
45/Typ.
68/Typ.
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ZF12
Abstract: No abstract text available
Text: K6T4016S6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.01 1.0 History Draft Date Remark Initial draft Errata correction June 26, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.
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K6T4016S6C
256Kx16
25/Typ.
45/Typ.
68/Typ.
ZF12
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM K6R1016C1B-C, K6R1016C1B-I Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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K6R1016C1B-C,
K6R1016C1B-I
64Kx16
44-TSOP2-400BF
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KM616U4010C
Abstract: KM616U4010CLZI-L
Text: KM616V4010C, KM616U4010C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. History Draft Date Remark Initial draft - UB/LB power control Errata correction July 4, 1998
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KM616V4010C,
KM616U4010C
256Kx16
48-CSP
KM616V4010C
25/Typ.
45/Typ.
68/Typ.
KM616U4010CLZI-L
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k6t4016c3c-tf70
Abstract: K6T4016C3C K6T4016C3C-RB55 K6T4016C3C-TB70 K6T4016C3CTB7 K6T4016C3CF K6T4016C3C-TF55
Text: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6T4016C3C
256Kx16
k6t4016c3c-tf70
K6T4016C3C-RB55
K6T4016C3C-TB70
K6T4016C3CTB7
K6T4016C3CF
K6T4016C3C-TF55
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KM616U4010C
Abstract: KM616U4010CLZI-L
Text: Preliminary CMOS SRAM KM616U4010C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. History 0.0 0.01 Initial draft - UB/LB power control Errata correction Draft Date Remark
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KM616U4010C
256Kx16
48-CSP
25/Typ.
45/Typ.
68/Typ.
KM616U4010CLZI-L
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616S4110C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.01 History Draft Date Remark Initial draft Errata correction June 26, 1998 August 17, 1998 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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KM616S4110C
256Kx16
25/Typ.
45/Typ.
68/Typ.
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k6t4016c3c-tf70
Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
Text: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6T4016C3C
256Kx16
k6t4016c3c-tf70
K6T4016C3C-TB70
K6T4016C3C-TB55
April 1999
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IS61SP25636
Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B
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32Kx8
32Kx16
128Kx8
64Kx16
128Kx16
IS61C64B
IS61C256AH
IS61C3216
IS61C3216B
IS61SP25636
s62lv256
256x16 sram
89C64
IS41LV16105
soj44
non-volatile SRAM 4KX8
issi 32kx16
IS80C31
64KX64
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