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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: APS00B MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS MAGNETIC FLUX ROTATION -q SUPPLY VOLTAGE +q #12V POWER DISSIPATION 200mW TEMPERATURE -55 TO 150C CHARACTERISTICS @ 25C & 5V UNLESS OTHERWISE STATED 0.193 0.189 0.050 0,0 MIN SUPPLY VOLTAGE TEMPERATURE 0.016	Original	PDF	APS00B 200mW AMOV04 25NOV04 08JUN11 25NOV03 5M-1982
M48T59Y-70PC1D Abstract: No abstract text available Text: M48T59 M48T59Y, M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, AND BATTERY FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION	Original	PDF	M48T59 M48T59Y, M48T59V* M48T59: M48T59Y: 28-LEAD M48T59Y-70PC1DS M48T59Y M48T59Y-70PC1D
BF964 Abstract: BF964SA BF964S BF964SB TO50 package Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance	Original	PDF	BF964S BF964SA BF964SB BF964SA BF96s D-74025 BF964 BF964S BF964SB TO50 package
BF966SA Abstract: BF966S BF966 BF966SB TO50 package MA1300 Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance	Original	PDF	BF966S BF966SA BF966SB BF966SA BF966S D-74025 BF966 BF966SB TO50 package MA1300
BF961 Abstract: TO50 package BF961A BF961B Text: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance	Original	PDF	BF961 BF961A BF961B BF961s D-74025 25-Nov-04 BF961 TO50 package BF961B
BF988A Abstract: BF988 BF988B TO50 package Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance	Original	PDF	BF988 BF988A BF988B BF988A BF988s D-74025 25-Nov-04 BF988 BF988B TO50 package
M48T59 Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28 Text: M48T59 M48T59Y, M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, AND BATTERY FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION	Original	PDF	M48T59 M48T59Y, M48T59V* M48T59: M48T59Y: 28-LEAD M48T59 M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
evi 330 Abstract: No abstract text available Text: MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS SUPPLY P OWE R VOLTAGE db 1 2 V DISSIPATION 2 0 OmW TEMPERATURE -55 TO 1500 CHARACTERISTICS * 25C & 5V UNLESS OTHERWISE STATED M 1N SUPPLY VOLTAGE MAX 5 TEMPERATURE BRIDGE TYP 50. 0 C .6 K OHMS 0. 9 .25 MA X O U T P U T A M P L I T U D E	OCR Scan	PDF	25NOV04 200mW evi 330