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    25V 1A MOSFET Search Results

    25V 1A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    25V 1A MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HIP1030AS

    Abstract: igbt driver
    Text: 39 HIP1030 PRELIMINARY Apni 1994 1A High Side Driver with Overload Protection Description Features • Over Operating Temperature Range -40°C to +125°C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range • Over-Voltage Shutdown Protected


    OCR Scan     		HIP1030 HIP1030 HIP1030AS igbt driver PDF

    HIP1030

    Abstract: HIP1030AS
    Text: HIP1030 S E M I C O N D U C T O R 1A High Side Driver with Overload Protection December 1994 Features Description o o • Over Operating Temperature Range -40 C to +125 C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range


    Original     		HIP1030 HIP1030 1-800-4-HARRIS HIP1030AS PDF

    Untitled

    Abstract: No abstract text available
    Text: S HIP 1030 ADVANCE INFORMATION 1A High Side Driver With Over-Load Protection May !992 Features Description • Over Operating Range: -40°C to +125°C - 1V Max at 1A Saturation Voltage - 1A Current Switching Capability - 4.5V to 25V Power Supply Range The HIP1030 is a Power Integrated Circuit designed as a


    OCR Scan     		HIP1030 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current Low saturation voltage VCE sat < -250mV @ -1A


    Original     		FZT789A OT223 -250mV FZT689B AEC-Q101 OT223 J-STD-020 DS33168 PDF

    C3225X5R1C476M

    Abstract: SMD Transistor 070 R AC adapter 19V liteon smd transistor ea 1P smd transistor transistor smd 12p transistor 12p smd schematic liteon adapter notebook EA Q4 SMD transistor transistor panasonic vertical preset 10k
    Text: ISL85001EVAL1Z: 1A Regulator Standard Buck PWM Application Note December 1, 2008 AN1443.0 Description Recommended Equipment The ISL85001EVAL1Z REV A kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from 4.5V to 25V. The ISL85001EVAL1Z evaluation


    Original     		ISL85001EVAL1Z: AN1443 ISL85001EVAL1Z ISL85001 425in2 ISL85001EVAL1Z C3225X5R1C476M SMD Transistor 070 R AC adapter 19V liteon smd transistor ea 1P smd transistor transistor smd 12p transistor 12p smd schematic liteon adapter notebook EA Q4 SMD transistor transistor panasonic vertical preset 10k PDF

    ZXTN649FTA

    Abstract: zxtn649 T-23 ZXTN649F ZXTP749F
    Text: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ


    Original     		ZXTN649F 120mV ZXTP749F OT-23 J-STD-020 DS31900 ZXTN649FTA zxtn649 T-23 ZXTN649F ZXTP749F PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Mechanical Data Features • • • • • • • • • • • BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ


    Original     		ZXTN649F 120mV ZXTP749F OT-23 J-STD-020 DS31900 PDF

    ZXTP749FTA

    Abstract: sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet
    Text: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A


    Original     		ZXTP749F -150mV ZXTN649F OT-23 J-STD-020 DS31901 ZXTP749FTA sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet PDF

    transistor T23

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A


    Original     		ZXTP749F -150mV ZXTN649F OT-23 J-STD-020 DS31901 transistor T23 PDF

    IR7303

    Abstract: electrolytic capacitor 1uF 25v 220uf, 25v electrolytic capacitor 220uf/25V capacitor c1 220uF CDRH127-330 SI9936 resistor 330 Ohm capacitor 1uF 25V 220uF, 25V
    Text: TFT Monitor 10V to 20V INPUT C2 1uF 10V 9 R1 20k 2 D1 CMPSH-3 16 VP 15 VL BST ILIM COMP DH C1 27nF 14 13 12 LX DL VL GND C4 220uF 25V HC 11 C3 0.1uF R3 10 R4 10 OUT 1 POK 10 FB2 B3 C11 220uF 10V MV-AX R5 30.9k C6 4.7nF B2 5V@1A 3 4 FB 127-330 N1 1/2 Si9936


    Original     		220uF Si9936 MAX1864T 200mVpp 100mVpp LMK212BJ105MG 220uF 25MV220HC IR7303 electrolytic capacitor 1uF 25v 220uf, 25v electrolytic capacitor 220uf/25V capacitor c1 220uF CDRH127-330 SI9936 resistor 330 Ohm capacitor 1uF 25V 220uF, 25V PDF

    P-channel Dual MOSFET VGS -25V

    Abstract: b 1624 transistor P-channel MOSFET VGS -25V
    Text: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


    OCR Scan     		HCT802 HCT802 P-channel Dual MOSFET VGS -25V b 1624 transistor P-channel MOSFET VGS -25V PDF

    VN0109N5

    Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
    Text: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an


    Original     		AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0109N5 VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109 PDF

    Untitled

    Abstract: No abstract text available
    Text: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance


    OCR Scan     		HCT801 HCT801 250mA PDF

    HCT801

    Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
    Text: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


    OCR Scan     		HCT801 HCT801 000E345 HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185 PDF

    Untitled

    Abstract: No abstract text available
    Text: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)


    Original     		WTN9575 OT-223 18-Jul-07 OT-223 PDF

    IN4007

    Abstract: SD4843P SD4843 IN4007 DC IN4007 5A sd484 222M 1kv SD484X SD484XP67K65 SA431A
    Text: SD484XP67K65 EKSD484XP67K65_01_V1.4 SD484X P67K65 85 265V 15W SD484XP67K65_AN01 EK01_V1.4 7.2W 12W 14W 18W 80 SD484XP67K65 PWM 650V MOSFET SD484XP67K65 MOSFET 16.8 4.8 9.6 6.0 3.6 0.6 A 0.75 A 0.90 A 1.20 A 1.50A 68x35.5×1.5 mm3 EKSD484XP_01_V1.4 SD484XP67K65


    Original     		SD484XP67K65 EKSD484XP67K65 SD484X P67K65 SD484XP67K65 EKSD484XP SD4843P67K65 IN4007 SD4843P SD4843 IN4007 DC IN4007 5A sd484 222M 1kv SD484X SA431A PDF

    27BSC

    Abstract: marking 62m
    Text: WTK9410 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)


    Original     		WTK9410 300us, 12-Mar-07 27BSC 27BSC marking 62m PDF

    27BSC

    Abstract: marking 62m
    Text: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)


    Original     		WTK9410 300us, 12-Mar-07 27BSC 27BSC marking 62m PDF

    2N7336

    Abstract: IRFG6110
    Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)


    Original     		2N7336 IRFG6110 10--Gate 12--GatForward 2N7336 IRFG6110 PDF

    HCT801TX

    Abstract: Dual Enhancement Mode MOSFET
    Text: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source


    OCR Scan     		HCT801 HCT801 VN0109 D00S34S HCT801TX Dual Enhancement Mode MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)


    Original     		2N7336 IRFG6110 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3974-01L PDF

    AP2318GEN

    Abstract: No abstract text available
    Text: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		AP2318GEN OT-23 OT-23 100ms AP2318GEN PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3974-01L PDF