Untitled
Abstract: No abstract text available
Text: UPD43256BGX-B12-EJA 1/2 IL16 ∗∗∗∗∗ C-MOS 256k (32kx8) BIT STATIC RAM –TOP VIEW– OE A11 A9 A8 A13 WE A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC VDD (+2.7 to 5.5V) GND NC A0-14 ; ADDRESS INPUTS I/O1-18 ; DATA INPUTS/OUTPUTS
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UPD43256BGX-B12-EJA
32kx8)
A0-14
I/O1-18
262144BIT
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AK6516CF
Abstract: EEPROM AK6516C power supply 5v X101 X110
Text: ASAHI KASEI [AK6516C] AK6516C SPI bus 256Kbit Serial CMOS EEPROM Features
Advanced CMOS EEPROM Technology
Single Voltage Supply: 1.6V to 5.5V
256Kbits; 32768 x 8 organization
SPI Serial Interface Compatible
Low Power Consumption 0.8µA Max. Standby mode
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AK6516C]
AK6516C
256Kbit
256Kbits;
AK6516CF
EEPROM
AK6516C
power supply 5v
X101
X110
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PDF
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M5M5256DP
Abstract: M5M5256DVP m5m5256dkp
Text: '97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION FEATURE Access Power supply current time Active Stand-by (max) (max) (max) Type M5M5256DP, KP, FP,VP,RV-45LL
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M5M5256DP
-45LL-I
-55LL-I
-70LL-I,
-45XL-I
-55XL-I
-70XL-I
262144-BIT
32768-WORD
M5M5256DP,
M5M5256DVP
m5m5256dkp
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PDF
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M5M5258DP
Abstract: M5M5258D J-12 M5M5258D-15 65536-WORD
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M5258DP,J-12,-15,-20,-15L,-20L M5M5258DP,J-12,-15,-20,-15L,-20L 262144-BIT 65536-WORD BYBY 4-BIT CMOS STATIC RAM 262144-BIT (65536-WORD 4-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5258D is a family of 65536-word by 4-bit static RAMs,
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M5M5258DP
262144-BIT
65536-WORD
M5M5258D
J-12
M5M5258D-15
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PDF
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tms jl 27C256-15
Abstract: tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15
Text: TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS25BH- SEPTEMBER 1964 - REVISED NOVEMSER 1997 Organization . . . 32768 by 8 Bits J PACKAGE TO P VIEW Single 5-V Power Supply Pin Compatible With Existing 256K MOS
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TMS27C256
TMS27PC256
SMLS25BH-
27C/PC256-10
27C/PC256-12
27C/PC256-15
27C/PC256-17
27C/PC256-20
27C/PC256-25
400-mV
tms jl 27C256-15
tms jl 27c256-12
tms jl 27C256-10
TMS JL 27C256-20
TMS JE 27C256-15
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PDF
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9262E
Abstract: No abstract text available
Text: SMJ27C256 262 144-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS005D-MAY 1986-REVISED FEBRUARY 1993 Military Operating Temperature Range . . . - 55°C to 125°C J P A C K A G ET T O P V IE W MIL-STD-883C Class B High-Reliabillity Processing Organization . . . 32K
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SMJ27C256
144-BIT
SGMS005D-MAY
1986-REVISED
MIL-STD-883C
9262E
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri
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M5M5255BP,
BKP-70
-70LL
-85LL
-12LL
262144-bit
32768-words
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PDF
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M66287FP
Abstract: 262-141
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 2.0 DATA SHEET MBM10C500-15 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu M8M10C500 is fully decoded 262144 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. This device is organized
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MBM10C500-15
262144-BIT
M8M10C500
MBM10C500
24-pin
DIP-24C-A
FPT-24C-C
24-LE
FPT-24C-C04}
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PDF
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D43256A
Abstract: TINA NEC electronics upd43256a
Text: E C ELECTRONICS INC NEC ELECTRON DEVICE / b2E D • b4S75E5 OOBSbMT fiTfi M N E C E s h e e MOS t INTEGRATED CIRCUIT ¿¿PD43256A 256K-BIT CMOS STATIC RAM EXTEN DED TEMPERATURE VERSIO N DESCRIPTION The ¿¿PD43256A is a high speed, low power, 32K words by 8 bits CMOS static RAM fabricated with advanced
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b4S75E5
uPD43256A
256K-BIT
PD43256A
D43256A
b427525
SYM30L
TINA NEC electronics
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PDF
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Untitled
Abstract: No abstract text available
Text: MH1616FNA-29 262144-BIT 16384-WORD BY 16-BIT COMS STATIC RAM DESCRIPTION The M H 1616FN A is a 2 6 2 1 4 4 -bits CMOS static PIN CONFIGURATION (TOP VIEW) [Both side] RAM nodule organized as 16384-w ords by 16-bits. It consists of DQo 1 1 :our industry standard 1 6 K x 4 static RAMs and designed
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MH1616FNA-29
262144-BIT
16384-WORD
16-BIT)
1616FN
16384-w
16-bits.
65ohm
36-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M5255BP,FP,KP-70,-85,-10,-12,-70L,-85L, -10L,-12L,-70LL,-85LL,-10LL,-12LL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION fh e M 5M 5255BP, FP, KP is a 2 6 2144 bit CMOS static RAM PIN CONFIGURATION (TOP VIEW) organized as 32768-w ords by 8-bits w hich is fabricated using
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M5M5255BP
KP-70
-70LL
-85LL
-10LL
-12LL
262144-BIT
32768-WORD
5255BP,
32768-w
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M52B78AJ- 8 ,-10,-12 262144-BIT (32768-WORD BY 8-BIT) BiCMOS STATIC RAM DESCRIPTION The M5M52B78 is a family of 32768-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance BiCMOS process and designed for
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M5M52B78AJ-
262144-BIT
32768-WORD
M5M52B78
52B78AJ-8)
52B78AJ-10.
52B78AJ-12.
M5M52B78A-10
M5M52B78A-12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5278DP,J,FP,VP-20V,-25V 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) th e M 5M 5278D is a family of 32768-word by 8-bit static RAMs, fabricated with the high-performance C M O S silicon-gate MOS
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M5M5278DP
VP-20V
262144-BIT
32768-WORD
5278D
5278DP
VP-25V
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H5M5256
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL.-10XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M 5M 5256CP.FP.KP.VP,RV is a 2 6 2144- b it CMOS static RAMs organized as 3 2 7 68 -w ords by 8 -b its which is fabricated using high-performance 3 polysilicon CMOS
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M5M5256CP
RV-85LL
-85XL,
-10LL
-10XL
262144-BIT
32768-WORD
5256CP
M5M5256CVP,
28-pin
H5M5256
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PDF
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M5M5257CP
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M5257CP,J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5257C is a fam ily o f 262144-w ord by 1-bit static PIN CONFIGURATION (TO P VIEW) 3AMs, fabricated w ith the high-performance CMOS silicongate
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M5M5257CP
262144-BIT
262144-WORD
5257C
262144-w
J-20L1
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PDF
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5257B
Abstract: 10 35L m5m5257
Text: MITSUBISHI LS Is M 5 M 5 2 5 7 B P , J - 1 5 ,- 1 7 ,-2 0 ,- 2 5 ,- 3 5 , -2 0 L ,-2 5 L ,-3 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION ''h e M 5M 5257B is a fam ily o f 262144-w ord by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate
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OCR Scan
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262144-BIT
262144-WORD
5257B
262144-w
M5M5257BP
J-20L
10 35L
m5m5257
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PDF
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M5M5257CP
Abstract: M5M5257C-35-35L
Text: MITSUBISHI LS Is M5M5257CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 5 M 5 2 5 7 C is a fa m ily o f 2 6 2 1 4 4 -w o rd b y 1-bit s ta tic R A M s, fa b rica te d w ith th e hig h -p erform a n ce CMOS silicongate
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M5M5257CP,
262144-BIT
262144-WORD
M5M5257CP
M5M5257C-35-35L
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PDF
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M5M5258cp
Abstract: 10 35L 5258C 10 35L A8
Text: MITSUBISHI LS Is M5M5258CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5258C is a fam ily o f 6 5 5 3 6 w ord by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate
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M5M5258CP,
262144-BIT
65536-WORD
5258C
J-20L,
M5M5258cp
10 35L
10 35L A8
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PDF
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262144-word
Abstract: 1BIT CMOS STATIC RAM
Text: MITSUBISHI LS Is M5M5257BP, J-15,-20,-25 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate MOS process and designed for high-speed application. These
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M5M5257BP,
262144-BIT
262144-WORD
M5M5257B
M5M5257BP
300mW
M5M5257B-15
1BIT CMOS STATIC RAM
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PDF
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17V19
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5V257DP,J-15,-20,-25 pu 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5V257D is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These devices
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M5M5V257DP
262144-BIT
262144-WORD
M5M5V257D
165mW
M5M5V257DP,
17V19
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PDF
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M5M5278C-25
Abstract: M5M5278c
Text: MITSUBISHI LS Is M5M5278CP, J-15,-20,-25,-25L M5M5278CFP-20,-25,-25L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5278C is a fam ily o f 32768-w ord by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicon' A 9 - > [T
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M5M5278CP,
M5M5278CFP-20
262144-BIT
32768-WORD
5278C
32768-w
FP-25L.
M5M5278C-25
M5M5278c
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5258AP,J-25,-30,-35,-45, -30L,-35L,-45L 262144-BIT 65536-W0RD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5258A is a fa m ily o f 65536 word by 4 -b it static PIN CONFIGURATION {TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate MOS process and designed fo r high-speed application.
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M5M5258AP
262144-BIT
65536-W0RD
5258AP,
5258AP.
J-301.
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TMS29F256FM
Abstract: ic NL 731 TMS29F259FM 29F256-250
Text: TMS29F256, TMS29F258, TMS29F259 262144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES REV A — S M JS 256C - • Organization 32K x 8 TMS29F256 . . . N Package TMS29F256 . . . J Package TMS29F258 . . . N Package TM S 29F258 I Package Top View
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TMS29F256,
TMS29F258,
TMS29F259
262144-BIT
TMS29F256
TMS29F258
29F258
29F256/8/9-170
29F256/8/9-200
TMS29F256FM
ic NL 731
TMS29F259FM
29F256-250
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