MAX4790EUS
Abstract: specifications of ic 1408 aeac MAX4793
Text: 19-2663; Rev 1; 8/03 200mA/250mA/300mA Current-Limit Switches Features ♦ Guaranteed Current Limit: 200mA, 250mA, 300mA ♦ Thermal-Shutdown Protection ♦ Reverse Current Protection Applications ♦ ♦ ♦ ♦ 0.2Ω On-Resistance 14ms Guaranteed Blanking Time
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200mA/250mA/300mA
200mA,
250mA,
300mA
MAX4789/MAX4791/MAX4793)
OT23/SOT143
MAX4789EUS-T
OT143-4
MAX4789EUK-T
MAX4790EUS
specifications of ic 1408
aeac
MAX4793
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MAX4793
Abstract: No abstract text available
Text: 19-2663; Rev 3; 10/08 200mA/250mA/300mA Current-Limit Switches The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate
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200mA/250mA/300mA
MAX4789â
MAX4794
200mA,
250mA,
300mA
MAX4789,
MAX4791,
MAX4793
/250mA/300mA
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MAX4793
Abstract: MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789 MAX4789EUS-T MAX4790 MAX4791 MAX4792
Text: 19-2663; Rev 0; 10/02 200mA/250mA/300mA Current-Limit Switches Features The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate
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200mA/250mA/300mA
MAX4789
MAX4794
200mA,
250mA,
300mA
MAX4789,
MAX4791,
MAX4793
MO229
MAX4790EUS
specifications of ic 1408
MAX4785
MAX4788
MAX4789EUS-T
MAX4790
MAX4791
MAX4792
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MAX47915
Abstract: MAX4793 aeac IC ax 2008 IC ax 2008 circuit diagram MAX4789EUS-T MAX4785 MAX4788 MAX4789 MAX4790
Text: 19-2663; Rev 3; 10/08 200mA/250mA/300mA Current-Limit Switches The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate
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200mA/250mA/300mA
MAX4789
MAX4794
200mA,
250mA,
300mA
MAX4789,
MAX4791,
MAX4793
MAX47915
aeac
IC ax 2008
IC ax 2008 circuit diagram
MAX4789EUS-T
MAX4785
MAX4788
MAX4790
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MAX4793
Abstract: AX sot23-5 MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789 MAX4789EUS-T MAX4790 MAX4791
Text: 19-2663; Rev 2; 2/05 200mA/250mA/300mA Current-Limit Switches Features The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate
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200mA/250mA/300mA
MAX4789
MAX4794
200mA,
250mA,
300mA
MAX4789,
MAX4791,
MAX4793
T1433-2
AX sot23-5
MAX4790EUS
specifications of ic 1408
MAX4785
MAX4788
MAX4789EUS-T
MAX4790
MAX4791
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25Starting
Abstract: khb9d0n90f1 khb9d0n90f 75nC 2663 transistor KHB9D0N90P1
Text: SEMICONDUCTOR KHB9D0N90P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N90P1/F1
KHB9D0N90P1
dI/dt200A/,
25Starting
khb9d0n90f1
khb9d0n90f
75nC
2663 transistor
KHB9D0N90P1
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9d0n90n
Abstract: KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020
Text: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N90NA
dI/dt200A/,
9d0n90n
KHB 9d0n90n
khb9d0n90n
khb9d0n90na
2663 transistor
9d0n90
54NC
khb9d0n90
transistor marking 020
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KHB9D0N90N1
Abstract: khb9d0n90n khb9d0n90 2663 transistor
Text: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N90N1
KHB9D0N90N1
khb9d0n90n
khb9d0n90
2663 transistor
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KHB 9d0n90n
Abstract: 9d0n90n KHB9D0N90N KHB9D0N90NA 54nc
Text: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N90NA
above25
0N90NA
KHB 9d0n90n
9d0n90n
KHB9D0N90N
KHB9D0N90NA
54nc
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khb9d0n90n
Abstract: khb9d0n90
Text: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N90N1
khb9d0n90n
khb9d0n90
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RF5189
Abstract: qfn 32 land pattern IPC-SM-782 qfn 3X3 20 pins land pattern 16 pins qfn 3x3 footprint
Text: RF5189 3V, 2.45GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems
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RF5189
45GHz
IEEE802
RF5189
203mm
330mm
025mm
qfn 32 land pattern
IPC-SM-782
qfn 3X3 20 pins land pattern
16 pins qfn 3x3 footprint
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smd transistor 2f
Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.
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Tap15
FTO-220
S10VB
S15VB
S15VBA
S25VB
S50VB
S10WB
S15WB
S20WB
smd transistor 2f
330 smd
transistor 2sk 168
K2663
smd TRANSISTOR code 2F
2SJ 162
m 147 smd transistor
s4vb 10 73
SMD CODE TRANSISTOR 2SK
smd transistor 1Z
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IC AL 6001
Abstract: rjz ce 6002 transistor PTC6003
Text: 6115950 MICROSEMI 02E CORP/POWER □5 00448 D D e | ^ 1 1 5 ^ 5 0 o p p c m ita 1 f PTC PTC PTC PTC TECH N O LO GY Power Technology Components 6000 6001 6002 6003 FAST-SWITCHING HIGH POWER DARLINGTON TRANSISTORS 15 AMPERES 500 VOLTS Ö -o * 0 384| JÔ50 -{2663! MAX“
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6001I
6002PTC
IC AL 6001
rjz ce
6002 transistor
PTC6003
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SMD T26
Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
Text: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r
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AX057
AX078
AX057
SMD T26
S5VB 60 59
ic 4101 smd
MML400
smd 1z
SMD Transistors code
ic 4063 smd
2sk 4000
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10
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2SK1861
F05B23VR
2SK1195
STO-220
STO-220
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]
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OT-89
2SK1861
2SK1195
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2SC460
Abstract: No abstract text available
Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5
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2SA1795
2SC460S
Enhance861
F05B23VR
2SK2489
STO-220
2SC460
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e-pack
Abstract: 2SK1861 2SK1195 F05B23VR
Text: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100
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STO-220
D005172
e-pack
2SK1861
2SK1195
F05B23VR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
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MRF6403
C9toC12
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LB1287
Abstract: 2663 transistor booc power transistors LB1288
Text: 266E Ordering number : EN , Monolithic Digital 1C LB1287.1288 N0.266E Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equip
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LB1287J288
14-pin
LB1287
2663 transistor
booc power transistors
LB1288
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2663 transistor
Abstract: mpsa70
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon MPSA70 COLLECTOR 3 1 EMITTER CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ T/\ = 25°C
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MPSA70
O-226AA)
AN-569.
2663 transistor
mpsa70
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17611
Abstract: 2sc2652 138D 2SA1020 2SA1133
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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930MHz
58MHz
17611
2sc2652
138D
2SA1020
2SA1133
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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AN215A,
MRF5035.
AN721,
MRF5035
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Untitled
Abstract: No abstract text available
Text: Temic U2403B S e m i c o n d u c t o r s Charge Timer Description The U2403B is a monolithic, integrated-bipolar circuit which can be used in applications for time-controlled, constant-current charge. Selection of charge current versus timing is carried out by using the external circuit
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U2403B
U2403B
20-Mar-96
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