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    26N50 Search Results

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    26N50 Price and Stock

    Littelfuse Inc IXTQ26N50P

    MOSFET N-CH 500V 26A TO3P
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    DigiKey IXTQ26N50P Tube 262 1
    • 1 $7.21
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    • 100 $4.44267
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    Newark IXTQ26N50P Bulk 300
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    • 100 $5.2
    • 1000 $4.18
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    Littelfuse Inc IXFP26N50P3

    MOSFET N-CH 500V 26A TO220AB
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    DigiKey IXFP26N50P3 Tube 250 1
    • 1 $8.65
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    • 100 $8.65
    • 1000 $4.59712
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    Newark IXFP26N50P3 Bulk 300
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    RS IXFP26N50P3 Bulk 8 Weeks 50
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    Littelfuse Inc IXTT26N50P

    MOSFET N-CH 500V 26A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT26N50P Tube 205 1
    • 1 $11.08
    • 10 $11.08
    • 100 $6.61033
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    Newark IXTT26N50P Bulk 300
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    Littelfuse Inc IXFH26N50P3

    MOSFET N-CH 500V 26A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH26N50P3 Tube 92 1
    • 1 $7.75
    • 10 $7.75
    • 100 $4.80133
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    RS IXFH26N50P3 Bulk 8 Weeks 30
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    Littelfuse Inc IXFJ26N50P3

    MOSFET N-CH 500V 14A TO247
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    DigiKey IXFJ26N50P3 Tube 19 1
    • 1 $19.07
    • 10 $19.07
    • 100 $12.62633
    • 1000 $19.07
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    Newark IXFJ26N50P3 Bulk 300
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    • 1000 $13.01
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    RS IXFJ26N50P3 Bulk 8 Weeks 30
    • 1 -
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    • 100 $19.19
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    Find more 26N50 price and stock on Findchips.com

    26N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixf26n50q

    Abstract: 24N50 26N50Q 125OC ixf26N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF 26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50

    26N50

    Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 26N50 IXFC 26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode


    Original     		PDF 26N5001/S14

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data type photo background suppression light source pulsed infrared diode


    Original     		PDF 26N5001/S14

    ixfh26n50q

    Abstract: 26N50 IXFC 26N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS220TM 26N50Q 24N50Q 220TM 26N50 24N50 ixfh26n50q IXFC 26N50

    26n50

    Abstract: IXFH .26n50 PLUS220SMD
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 26N50P 26N50PS 26n50 IXFH .26n50 PLUS220SMD

    PLUS220SMD

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 26N50P 26N50PS O-247) PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 13 8 8 M12 x 1 24,3 * emitter axis general data photo type background suppression light source pulsed infrared diode


    Original     		PDF 26N5001/S14

    26N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF 26N50 ISOPLUS247TM 24N50 24N50 IXFR26N50

    ixf26N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 24N50Q 26N50Q O-240 125OC 728B1 ixf26N50

    26n50

    Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol


    Original     		PDF ISOPLUS220TM 26N50 24N50 220TM IXFC26N50 IXFC24N50 IXFH26N50 26n50 .24n50 24n50 ixfc26n50 IXFC24N50 W26-1 Ixfc 26n50

    24N50

    Abstract: 26N50 IXFC24N50 IXFC26N50 IXFH26N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 24N50 26N50 IXFC24N50 IXFC26N50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode


    Original     		PDF 26N5001/S14

    26N50

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS220TM 26N50Q 24N50Q 26N50 24N50 24N50 IXFC26N50Q

    26N50Q

    Abstract: IXFH26N50Q 24N50Q
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol


    Original     		PDF ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q

    26N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class VDSS ID25 RDS on = 500 V = 26 A = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 26N50Q 26N50Q O-24eristic 125OC 26N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 26N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF ISOPLUS220TM 26N50P Isolated55 2-06-05-A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode


    Original     		PDF 26N5001/S14

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode


    Original     		PDF 26N5001/S14

    24n50

    Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250
    Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family


    OCR Scan     		PDF ISOPLUS247â 26N50Q 24N50Q 26N50 24N50 IXFR26N50Q IXFH26N50Q A24N50 .24n50 ISOPLUS247 IXFR24N50Q SST250

    26N80Q

    Abstract: 26N80
    Text: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5


    OCR Scan     		PDF 26N50Q 26N50Q UL94V-0 10TransientThermal 26N80Q 26N80