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    26FEB07 Search Results

    26FEB07 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFS17

    Abstract: H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking
    Text: BFS17 NPN 1GHz Medium Wideband Transistor P b Lead Pb -Free 3 COLLECTOR 3 1 1 BASE Applications: SOT-23 2 EMITTER * Mixers and oscillators in TV tuners * RF communications equipment. 2 Descreption: NPN Transistor In a Plastic SOT-23 Package. MAXIMUM RATINGS (TA = 25ºC)


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    BFS17 OT-23 OT-23 26-Feb-07 BFS17 H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking PDF

    Untitled

    Abstract: No abstract text available
    Text: CC3 Vishay Electro-Films CHIP RESISTORS Thin Film 0505 Size Resistor on Alumina FEATURES • Chip size: 0.050 inches square • Resistance range: 30 Ω to 125 kΩ Product may not be to scale • Alumina substrate • Low stray capacitance: < 0.2 pF • Resistor material: nichrome


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    MIL-STD-883. 08-Apr-05 PDF

    74375

    Abstract: SiA443DJ 74375 datasheet
    Text: SPICE Device Model SiA443DJ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SiA443DJ S-70346Rev. 26-Feb-07 74375 74375 datasheet PDF

    74420

    Abstract: DG2735 DG2736 HP4192A JESD78
    Text: DG2735/DG2736 Vishay Siliconix Low Voltage, 0.6 Ω, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2735/2736 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog


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    DG2735/DG2736 DG2735/2736 DG2735 DG2736 18-Jul-08 74420 DG2736 HP4192A JESD78 PDF

    HP4192A

    Abstract: JESD78 10EN4 DG2788
    Text: DG2788/DG2789 Vishay Siliconix Low Voltage, Low On-Resistance, Dual DPDT/Quad SPDT Analog Switch DESCRIPTION The DG2788/DG2789 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high speed, low onresistance and small physical size, the DG2788/DG2789 are


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    DG2788/DG2789 DG2788/DG2789 DG2788 18-Jul-08 HP4192A JESD78 10EN4 PDF

    BAT46

    Abstract: BAT46-TAP BAT46W-V DO35 LL46 BAT46 VISHAY
    Text: BAT46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications. • This diode features very low turn-on volte2 age and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


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    BAT46 OD123 BAT46W-V 2002/95/EC 2002/96/EC TR/10 TAP/10 18-Jul-08 BAT46 BAT46-TAP DO35 LL46 BAT46 VISHAY PDF

    DG467

    Abstract: dg468dv-t1-e3 DG467DV DG467DV-T1-E3 DG468DV DG468
    Text: DG467/DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/single- • • • • • • • throw SPST switches. On resistance is 10 Ω maximum and flatness is 2 Ω max over the specified analog signal range.


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    DG467/DG468 DG467 DG468 18-Jul-08 dg468dv-t1-e3 DG467DV DG467DV-T1-E3 DG468DV PDF

    Untitled

    Abstract: No abstract text available
    Text: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


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    26-Feb-07 M1004-BD MIL-STD-883 XM1004-BD XM1004-BD-000V XM1004-BD-EV1 XM1004-BD PDF

    74373

    Abstract: v1482 1/LM 74373
    Text: SPICE Device Model SUU/SUD50P04-34 Vishay Siliconix P-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUU/SUD50P04-34 18-Jul-08 74373 v1482 1/LM 74373 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXCT1081 EV1 ZXCT1081EV1 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXCT1081EV1 is intended for the evaluation of the ZXCT1081 device. The ZXCT1081 is a high side current monitor providing a fixed voltage gain of 10. There is a second 50mΩ resistor that can be selected


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    ZXCT1081 ZXCT1081EV1 D-81541 Zdb341R2. 26-Feb-07 PDF

    M1006

    Abstract: 18KWR0327 DM6030HK TS3332LD XM1006-BD XM1006-BD-000V XM1006-BD-EV1 M1006b
    Text: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010


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    M1006-BD 26-Feb-07 MIL-STD-883 XM1006-BD-000V XM1006-BD-EV1 XM1006-BD M1006 18KWR0327 DM6030HK TS3332LD XM1006-BD-000V XM1006-BD-EV1 M1006b PDF

    material for chip resistors

    Abstract: Chip Resistors stray capacitance
    Text: CC5 Vishay Electro-Films CHIP RESISTORS Thin Film 1010 Size Resistor on Alumina FEATURES • Chip size: 0.100 inches square • Resistance range: 50 Ω to 1M Ω Product may not be to scale • Alumina substrate • Low stray capacitance: < 0.2 pF • Resistor material: nichrome


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    MIL-STD-883. 08-Apr-05 material for chip resistors Chip Resistors stray capacitance PDF

    M1004-BD

    Abstract: 26BAM0545 DM6030HK TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
    Text: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


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    26-Feb-07 M1004-BD MIL-STD-883 XM1004-BD XM1004-BD-000V XM1004-BD-EV1 XM1004-BD M1004-BD 26BAM0545 DM6030HK TS3332LD XM1004-BD-000V XM1004-BD-EV1 PDF

    DG2735

    Abstract: DG2736 HP4192A JESD78
    Text: DG2735/DG2736 Vishay Siliconix Low Voltage, 0.6 Ω, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2735/2736 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog


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    DG2735/DG2736 DG2735/2736 DG2735 DG2736 08-Apr-05 DG2736 HP4192A JESD78 PDF

    85659

    Abstract: Diode BAT41 BAT41 BAT41-TAP BAT41-TR DO35 LL41 bat41 600
    Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device e2 is protected by a PN junction guard ring against excessive voltage, such as electrostatic


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    BAT41 2002/95/EC 2002/96/EC TR/10 TAP/10 18-Jul-08 85659 Diode BAT41 BAT41 BAT41-TAP BAT41-TR DO35 LL41 bat41 600 PDF

    ARM LPC2148 application notes

    Abstract: Philips LPC2148 reference manual LPC2xxx SPI master code example LPC2148 interfacing circuit with adc LPC2148 interfacing circuit with adc using pwm AN10513 application notes lpc2148 LPC2148 DC motor program ARM7 LPC2129 UART trigger interrupt lpc2148
    Text: LPC2109/2119/2129 Single-chip 16/32-bit microcontrollers; 64/128/256 kB ISP/IAP flash with 10-bit ADC and CAN Rev. 06 — 10 December 2007 Product data sheet 1. General description The LPC2109/2119/2129 are based on a 16/32-bit ARM7TDMI-S CPU with real-time


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    LPC2109/2119/2129 16/32-bit 10-bit LPC2109/2119/2129 128-bit 32-bit 16-bit 64-pin ARM LPC2148 application notes Philips LPC2148 reference manual LPC2xxx SPI master code example LPC2148 interfacing circuit with adc LPC2148 interfacing circuit with adc using pwm AN10513 application notes lpc2148 LPC2148 DC motor program ARM7 LPC2129 UART trigger interrupt lpc2148 PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010


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    M1006-BD 26-Feb-07 MIL-STD-883 XM1006-BD-000V XM1006-BD-EV1 XM1006-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT3644 4-Channel Ultra High Efficiency Quad-Mode LED Driver DESCRIPTION FEATURES „ „ „ „ „ „ „ „ „ „ „ The CAT3644 is a high efficiency Quad-Mode® fractional charge pump that can drive up to four LEDs programmable by a one wire digital interface. The


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    CAT3644 16-pad CAT3644 MD-5023 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXCT1041 EV1 ZXCT1041EV1 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXCT1041EV1 is intended for the evaluation of the ZXCT1041 device. The ZXCT1041 is a high side bidirectional current monitor providing a fixed voltage gain of 10. The device produces a voltage output proportional to the


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    ZXCT1041 ZXCT1041EV1 D-81541 Zdb341R2. 26-Feb-07 PDF

    GDE 49

    Abstract: GENERAL SEMICONDUCTOR MARKING bfm marking code GGt 521
    Text: SMCJ5.0 thru SMCJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


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    SMCJ188CA DO-214AB J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 GDE 49 GENERAL SEMICONDUCTOR MARKING bfm marking code GGt 521 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C


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    UL94-V0 PDF

    BAT85S

    Abstract: BAT85S-TAP BAT85S-TR DO35
    Text: BAT85S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367


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    BAT85S 2002/95/EC 2002/96/EC TR/10 TAP/10 BAT85S-TR BAT85S-TAP 18-Jul-08 BAT85S BAT85S-TAP DO35 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 TH IS DRAWING 3 IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS - 2 - LOC RESERVED. CM BY TYCO ELECTRONICS CORPORATION. DIST R E V IS IO N S 00 LTR D REVISED PER D E SC RIPTIO N DATE DWN APVD E C Q -0 7 -0 0 3 7 2 9 26FEB07 KW


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    26FEB07 UL94V-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T RESERVED. REVISIO N S 00 C O R P O R A T IO N . D E S C R IP T IO N R R EV PE R R EV IS ED


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    11JUN2003 JUN2003 31MAR2000 PDF