M29W017D
Abstract: TFBGA48
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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PDF
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M29W017D
TSOP40
TFBGA48
M29W017D
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface
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M41ST84W
10ths/100ths
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M41ST85W
Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Text: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)
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M41ST85W
400kHz
SOH28
500nA
SOX28
10ths/100ths
M41ST85W
M4T28-BR12SH1
M4T32-BR12SH1
M4T32-BR12SH6
SOH28
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KDS 32kHZ crystal
Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface
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Original
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PDF
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M41ST84W
10ths/100ths
KDS 32kHZ crystal
quartz crystal kds 70
AN1572
M41ST84W
AN1012
AI005
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TECHNICAL SPECIFICATION DATA SHEET GOLD 705
Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■
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Original
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PDF
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M41ST85W
SOH28
TECHNICAL SPECIFICATION DATA SHEET GOLD 705
M41ST85W
M4T28-BR12SH1
M4T32-BR12SH1
M4T32-BR12SH6
SOH28
AN934
24JAN
NVRAM
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AN1012
Abstract: M41ST84W block diagram of energy saving ABE smd
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface ■ 3.0/3.3 V operating voltage
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Original
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PDF
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M41ST84W
10ths/100ths
AN1012
M41ST84W
block diagram of energy saving
ABE smd
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AMP PBT GF20 connector
Abstract: ejot torque
Text: 7 8 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2000 RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN. Tyco Electronics AMP GmbH 6 2001- - 5 4 3 2 LOC MATED WITH: PASSEND ZU:
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21POS.
07MAY2010
07SEP2011
EGAUT00498
16MAY2012
26JUL2001
07AUG2001
21pol.
AMP PBT GF20 connector
ejot torque
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Untitled
Abstract: No abstract text available
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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Original
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PDF
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M29W017D
TSOP40
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M4T32-BR12SH6
Abstract: No abstract text available
Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM ■ 400 kHz I2C serial interface
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Original
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PDF
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M41ST85W
SOX28
SOH28
M4T32-BR12SH6
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Untitled
Abstract: No abstract text available
Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM 400 kHz I2C serial interface
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Original
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PDF
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M41ST85W
SOH28
SOX28
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M29W017D
Abstract: TFBGA48
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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Original
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PDF
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M29W017D
TSOP40
TFBGA48
M29W017D
TFBGA48
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC RESERVED. REV I S IONS D I ST PT LTR DESCRIPTION R E V I S E D PER 0G3B - 0 3 26 - 0 I A • DWN DATE Ü6JUL200I APVD EZ MATER I A LS AND F I N I S H
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OCR Scan
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PDF
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6JUL200I
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS D I ST LOC REV I S IONS FT RESERVED. LTR R E V I S E D PER 0G3B - 0 3 2 6 - 0 I M A TE R I ALS AND F I N I S H H O U S I N G : PA 6 - 6 , UL 9 4 - V 0 ,
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OCR Scan
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PDF
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6JUL200I
26JUL2001
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS D I ST LOC REV I S IONS FT RESERVED. LTR R E V I S E D PER 0G3B - 0 3 2 6 - 0 I MATER I A L S AND F I N I S H H O U S I N G : PA 6 - 6 , UL 9 4 - V O ,
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OCR Scan
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PDF
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L2001
105Ha
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